Determination of 2D implanted ion distributions using inverse radon transform methods

Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed