4,287 research outputs found
Prospects for the Measurement of the Structure of the Coupling of a Higgs Boson to Weak Gauge Bosons in Weak Boson Fusion with the ATLAS Detector
The prospects for the measurement of the tensor structure of the vertex between a standard model Higgs boson and two weak gauge bosons using the distribution of the azimuthal angles between the two tagging jets in the weak boson fusion channel are studied in a Monte Carlo analysis using the fast simulation of the ATLAS detector. The decay channels , at GeV and at GeV are used in the analysis. For a standard model Higgs boson it is found that purely anomalous couplings are expected to be excluded at a confidence level corresponding to 2\, or more at GeV and more than 5\, at GeV from fb of data. With a value of 1 roughly reproducing the standard model cross section for a purely anomalous coupling, the standard deviation in a measurement of a contribution of a CP even anomalous coupling in addition to the standard model coupling is estimated to be 0.20 at GeV and 0.08 at GeV
Status of a DEPFET pixel system for the ILC vertex detector
We have developed a prototype system for the ILC vertex detector based on
DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron
large pixels) and uses two dedicated microchips, the SWITCHER II chip for
matrix steering and the CURO II chip for readout. The system development has
been driven by the final ILC requirements which above all demand a detector
thinned to 50 micron and a row wise read out with line rates of 20MHz and more.
The targeted noise performance for the DEPFET technology is in the range of
ENC=100 e-. The functionality of the system has been demonstrated using
different radioactive sources in an energy range from 6 to 40keV. In recent
test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120
has been achieved with present sensors being 450 micron thick. For improved
DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40
is expected.Comment: Invited poster at the International Symposium on the Development of
Detectors for Particle, AstroParticle and Synchrotron Radiation Experiments,
Stanford CA (SNIC06) 6 pages, 12 eps figure
First observation of electrons in the ATLAS detector
This poster shows approved plots from https://twiki.cern.ch/twiki/bin/view/Atlas/ElectronGammaApprovedCosmicPlots and will be presented at the Hadron Collider Physics Symposium 16th -20th November 2009 in Evian
Test beam Characterizations of 3D Silicon Pixel detectors
3D silicon detectors are characterized by cylindrical electrodes
perpendicular to the surface and penetrating into the bulk material in contrast
to standard Si detectors with planar electrodes on its top and bottom. This
geometry renders them particularly interesting to be used in environments where
standard silicon detectors have limitations, such as for example the radiation
environment expected in an LHC upgrade. For the first time, several 3D sensors
were assembled as hybrid pixel detectors using the ATLAS-pixel front-end chip
and readout electronics. Devices with different electrode configurations have
been characterized in a 100 GeV pion beam at the CERN SPS. Here we report
results on unirradiated devices with three 3D electrodes per 50 x 400 um2 pixel
area. Full charge collection is obtained already with comparatively low bias
voltages around 10 V. Spatial resolution with binary readout is obtained as
expected from the cell dimensions. Efficiencies of 95.9% +- 0.1 % for tracks
parallel to the electrodes and of 99.9% +- 0.1 % at 15 degrees are measured.
The homogeneity of the efficiency over the pixel area and charge sharing are
characterized.Comment: 5 pages, 7 figure
CIX - A Detector for Spectral Enhanced X-ray Imaging by Simultaneous Counting and Integrating
A hybrid pixel detector based on the concept of simultaneous charge
integration and photon counting will be presented. The second generation of a
counting and integrating X-ray prototype CMOS chip (CIX) has been operated with
different direct converting sensor materials (CdZnTe and CdTe) bump bonded to
its 8x8 pixel matrix. Photon counting devices give excellent results for low to
medium X-ray fluxes but saturate at high rates while charge integration allows
the detection of very high fluxes but is limited at low rates by the finite
signal to noise ratio. The combination of both signal processing concepts
therefore extends the resolvable dynamic range of the X-ray detector. In
addition, for a large region of the dynamic range, where counter and integrator
operate simultaneously, the mean energy of the detected X-ray spectrum can be
calculated. This spectral information can be used to enhance the contrast of
the X-ray image. The advantages of the counting and integrating signal
processing concept and the performance of the imaging system will be reviewed.
The properties of the system with respect to dynamic range and sensor response
will be discussed and examples of imaging with additional spectral information
will be presented.Comment: 12 pages, 14 figures, SPIE Medical Imaging Conference, San Diego,
200
HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results
In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology.
In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given
Radiation-hard active pixel sensors for HL-LHC detector upgrades based on HV-CMOS technology
Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region.
A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself.
The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature.
A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout.
In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown
3D electronics for hybrid pixel detectors – TWEPP-09
Future hybrid pixel detectors are asking for smaller pixels in order to improve spatial resolution and to deal with an increasing counting rate. Facing these requirements is foreseen to be done by microelectronics technology shrinking. However, this straightforward approach presents some disadvantages in term of performances and cost. New 3D technologies offer an alternative way with the advantage of technology mixing. For the upgrade of ATLAS pixel detector, a 3D conception of the read-out chip appeared as an interesting solution. Splitting the pixel functionalities into two separate levels will reduce pixel size and open the opportunity to take benefit of technology's mixing. Based on a previous prototype of the read-out chip FE-I4 (IBM 130nm), this paper presents the design of a hybrid pixel read-out chip using threedimensional Tezzaron-Chartered technology. In order to disentangle effects due to Chartered 130nm technology from effects involved by 3D architecture, a first translation of FEI4 prototype had been designed at the beginning of this year in Chartered 2D technology, and first test results will be presented in the last part of this paper
Determination of alpha_s using Jet Rates at LEP with the OPAL detector
Hadronic events produced in e+e- collisions by the LEP collider and recorded
by the OPAL detector were used to form distributions based on the number of
reconstructed jets. The data were collected between 1995 and 2000 and
correspond to energies of 91 GeV, 130-136 GeV and 161-209 GeV. The jet rates
were determined using four different jet-finding algorithms (Cone, JADE, Durham
and Cambridge). The differential two-jet rate and the average jet rate with the
Durham and Cambridge algorithms were used to measure alpha(s) in the LEP energy
range by fitting an expression in which order alpah_2s calculations were
matched to a NLLA prediction and fitted to the data. Combining the measurements
at different centre-of-mass energies, the value of alpha_s (Mz) was determined
to be
alpha(s)(Mz)=0.1177+-0.0006(stat.)+-0.0012$(expt.)+-0.0010(had.)+-0.0032(theo.)
\.Comment: 40 pages, 17 figures, Submitted to Euro. Phys. J.
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