Independent particle descriptions of tunneling from a many-body perspective

Currents across thin insulators are commonly taken as single electrons moving across classically forbidden regions; this independent particle picture is well-known to describe most tunneling phenomena. Examining quantum transport from a different perspective, i.e., by explicit treatment of electron-electron interactions, we evaluate different single particle approximations with specific application to tunneling in metal-molecule-metal junctions. We find maximizing the overlap of a Slater determinant composed of single particle states to the many-body current-carrying state is more important than energy minimization for defining single particle approximations in a system with open boundary conditions. Thus the most suitable single particle effective potential is not one commonly in use by electronic structure methods, such as the Hartree-Fock or Kohn-Sham approximations.Comment: 4+ pages, 4 figures; accepted to Phys. Rev. B Rapid Communication

Large-Scale Atomistic Simulations of Environmental Effects on the Formation and Properties of Molecular Junctions

Using an updated simulation tool, we examine molecular junctions comprised of benzene-1,4-dithiolate bonded between gold nanotips, focusing on the importance of environmental factors and inter-electrode distance on the formation and structure of bridged molecules. We investigate the complex relationship between monolayer density and tip separation, finding that the formation of multi-molecule junctions is favored at low monolayer density, while single-molecule junctions are favored at high density. We demonstrate that tip geometry and monolayer interactions, two factors that are often neglected in simulation, affect the bonding geometry and tilt angle of bridged molecules. We further show that the structures of bridged molecules at 298 and 77 K are similar.Comment: To appear in ACS Nano, 30 pages, 5 figure

A Molecular Platinum Cluster Junction: A Single-Molecule Switch

We present a theoretical study of the electronic transport through single-molecule junctions incorporating a Pt6 metal cluster bound within an organic framework. We show that the insertion of this molecule between a pair of electrodes leads to a fully atomically engineered nano-metallic device with high conductance at the Fermi level and two sequential high on/off switching states. The origin of this property can be traced back to the existence of a HOMO which consists of two degenerate and asymmetric orbitals, lying close in energy to the Fermi level of the metallic leads. Their degeneracy is broken when the molecule is contacted to the leads, giving rise to two resonances which become pinned close to the Fermi level and display destructive interference.Comment: 4 pages, 4 figures. Reprinted (adapted) with permission from J. Am. Chem. Soc., 2013, 135 (6), 2052. Copyright 2013 American Chemical Societ

Single-Molecule Electrochemical Transistor Utilizing a Nickel-Pyridyl Spinterface

Using a scanning tunnelling microscope break-junction technique, we produce 4,4′-bipyridine (44BP) single-molecule junctions with Ni and Au contacts. Electrochemical control is used to prevent Ni oxidation and to modulate the conductance of the devices via nonredox gatingthe first time this has been shown using non-Au contacts. Remarkably the conductance and gain of the resulting Ni-44BP-Ni electrochemical transistors is significantly higher than analogous Au-based devices. Ab-initio calculations reveal that this behavior arises because charge transport is mediated by spin-polarized Ni <i>d</i>-electrons, which hybridize strongly with molecular orbitals to form a “spinterface”. Our results highlight the important role of the contact material for single-molecule devices and show that it can be varied to provide control of charge and spin transport

In situ monitoring of intrinsic stress changes during copper electrodeposition on Au(111)

In this paper we report on the stress evolution during multilayer copper electrodeposition on Au(111). In particular, we investigated the dependence of the stress on the overpotential and made use of the knowledge established in surface science to identify the structure of the resulting films. We have adapted the method of monitoring the bending of a cantilever sample by STM to measure stress changes during the bulk electrodeposition. We find that the bulk copper films develop tensile stress, in contrast to the compressive stress resulting from the formation of the first monolayer at underpotential. The tensile stress changes for the bulk film, for an equivalent film thickness, increase with increasing overpotential. We relate these stress changes to (small angle) grain boundaries between adjoining copper growth centres. A larger grain boundary contact area results from the finer-grained deposits formed at higher overpotential. For equivalent deposition overpotential, copper electrodeposition, in both the absence and presence of crystal violet, gives rises to comparable stress evolution, resulting from the common source of the intrinsic stress

Variable contact gap single-molecule conductance determination for a series of conjugated molecular bridges

It is now becoming clear that the characteristics of the whole junction are important in determining the conductance of single molecules bound between two metal contacts. This paper shows through measurements on a series of seven conjugated molecular bridges that contact separation is an important factor in determining the electrical response of the molecular junction. These data are obtained using the I (t) method developed by Haiss et al since the scanning tunnelling microscope tip to substrate separation can be controlled through choice of the set-point (I-0) current and calibrated with current-distance curves and knowledge of the terminal to terminal length of the molecular wire. The contact gap separation dependence is interpreted as arising from tilting of these molecules in the junction and this model is underpinned by ab initio transport computations. In this respect we make the general observation that conductance increases rather dramatically at higher tilt angle away from the normal for conformationally rigid molecular wires and that this increase in conductance arises from increased electronic coupling between the molecular bridge and the gold contacts