Critical Evaluation of Organic Thin-Film Transistor Models

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.Comment: 20 pages, 10 figure

Repression of human activation induced cytidine deaminase by miR-93 and miR-155

BACKGROUND: Activation Induced cytidine Deaminase (AID) targets the immunoglobulin genes of activated B cells, where it converts cytidine to uracil to induce mutagenesis and recombination. While essential for immunoglobulin gene diversification, AID misregulation can result in genomic instability and oncogenic transformation. This is classically illustrated in Burkitt's lymphoma, which is characterized by AID-induced mutation and reciprocal translocation of the c-MYC oncogene with the IgH loci. Originally thought to be B cell-specific, AID now appears to be misexpressed in several epithelial cancers, raising the specter that AID may also participate in non-B cell carcinogenesis. METHODS: The mutagenic potential of AID argues for the existence of cellular regulators capable of repressing inappropriate AID expression. MicroRNAs (miRs) have this capacity, and we have examined the publically available human AID EST dataset for miR complementarities to the human AID 3'UTR. In this work, we have evaluated the capacity of two candidate miRs to repress human AID expression in MCF-7 breast carcinoma cells. RESULTS: We have discovered moderate miR-155 and pronounced miR-93 complementary target sites encoded within the human AID mRNA. Luciferase reporter assays indicate that both miR-93 and miR-155 can interact with the 3'UTR of AID to block expression. In addition, over-expression of either miR in MCF-7 cells reduces endogenous AID protein, but not mRNA, levels. Similarly indicative of AID translational regulation, depletion of either miR in MCF-7 cells increases AID protein levels without concurrent increases in AID mRNA. CONCLUSIONS: Together, our findings demonstrate that miR-93 and miR-155 constitutively suppress AID translation in MCF-7 cells, suggesting widespread roles for these miRs in preventing genome cytidine deaminations, mutagenesis, and oncogenic transformation. In addition, our characterization of an obscured miR-93 target site located within the AID 3'UTR supports the recent suggestion that many miR regulations have been overlooked due to the prevalence of truncated 3'UTR annotations

Zonas globais de resistência às plantas para análise de risco fitossanitário

Plant hardiness zones are widely used for selection of perennial plants and for phytosanitary risk analysis. The most widely used definition of plant hardiness zones (United States Department of Agriculture National Arboretum) is based on average annual extreme minimum temperature. There is a need for a global plant hardiness map to standardize the comparison of zones for phytosanitary risk analysis. Two data sets were used to create global hardiness zones: i) Climate Research Unit (CRU) 1973-2002 monthly data set; and ii) the Daily Global Historical Climatology Network (GHCN). The CRU monthly data set was downscaled to five-minute resolution and a cubic spline was used to convert the monthly values into daily values. The GHCN data were subjected to a number of quality control measures prior to analysis. Least squares regression relationships were developed using GHCN and derived lowest average daily minimum temperature data and average annual extreme minimum temperatures. Error estimate statistics were calculated from the numerical difference between the estimated value for the grid and the station. The mean absolute error for annual extreme minimum temperature was 1.9ºC (3.5ºF) and 2/3 of the stations were classified into the correct zone.Zonas de resistência às plantas, definidas pelo " United States Department of Agriculture National Arboretum" com base na média anual das temperaturas mínimas extremas, são amplamente utilizadas para a seleção de plantas perenes e para a análise de risco fitossanitário. Há necessidade de um mapa global para padronizar a comparação de zonas nas análises de risco fitossanitário. Dois bancos de dados climatológicos foram utilizados para criar tais zonas globais de resistência às plantas: i) conjunto de dados mensais de 1973-2002 da " Climate Research Unit (CRU)" ; e ii) dados climatológicos diários da " Daily Global Historical Climatology Network (GHCN)" . Os dados mensais da CRU foram ajustados a uma escala reduzida de resolução de cinco minutos, e um ajuste cúbico foi empregado para converter os dados mensais para diários. Os dados da RDGH foram submetidos a várias medidas de controle de qualidade antes de serem empregados nas análises. Relações de regressão pelo método dos mínimos quadrados foram desenvolvidas usando dados da RDGH, resultando nos mais baixos valores médios diários de temperatura mínima e média anual das temperaturas mínimas extremas. Os erros estatísticos estimados foram calculados a partir da diferença numérica entre os valores estimados para a malha e os observados nas estações climatológicas. O erro médio absoluto para a temperatura mínima extrema anual foi 1,9ºC (3,5ºF), o que possibilitou a classificação de 2/3 das estações dentro das zonas corretas

Nuclear effects in atomic transitions

Atomic electrons are sensitive to the properties of the nucleus they are bound to, such as nuclear mass, charge distribution, spin, magnetization distribution, or even excited level scheme. These nuclear parameters are reflected in the atomic transition energies. A very precise determination of atomic spectra may thus reveal information about the nucleus, otherwise hardly accessible via nuclear physics experiments. This work reviews theoretical and experimental aspects of the nuclear effects that can be identified in atomic structure data. An introduction to the theory of isotope shifts and hyperfine splitting of atomic spectra is given, together with an overview of the typical experimental techniques used in high-precision atomic spectroscopy. More exotic effects at the borderline between atomic and nuclear physics, such as parity violation in atomic transitions due to the weak interaction, or nuclear polarization and nuclear excitation by electron capture, are also addressed.Comment: review article, 53 pages, 14 figure

What can the activation energy tell about the energetics at grain boundaries in polycrystalline organic films?

Charge-carrier transport at the semiconductor-gate dielectric interface in organic field-effect transistors is critically dependent on the degree of disorder in the typically semi-crystalline semiconductor layer. Charge trapping can occur at the interface as well as in the current-carrying semiconductor layer itself. A detailed and systematic understanding of the role of grain boundaries between crystallites and how to avoid their potentially detrimental effects is still an important focus of research in the organic electronics community. A typical macroscopic measurement technique to extract information about the energetics of the grain boundaries is an activation energy measurement. Here, we compare detailed experiments on the energetic properties of monolayer thin films implemented in organic field-effect transistors, having controlled numbers of grain boundaries within the channel region to kinetic Monte-Carlo simulations of charge-carrier transport to elucidate the influence of grain boundaries on the extracted activation energies. Two important findings are: 1) whereas the energy at the grain boundary does not change with the number of grain boundaries in a thin film, both the measured and simulated activation energy increases with the number of grain boundaries. 2) In simulations where both energy barriers and valleys are present at the grain boundaries there is no systematic relation between the number of grain boundaries and extracted activation energies. We conclude, that a macroscopic measurement of the activation energy can serve as general quality indicator of the thin film, but does not allow microscopic conclusions about the energy landscape of the thin film

Measurement of the charged pion mass using X-ray spectroscopy of exotic atoms

The $5g-4f$ transitions in pionic nitrogen and muonic oxygen were measured simultaneously by using a gaseous nitrogen-oxygen mixture at 1.4\,bar. Due to the precise knowledge of the muon mass the muonic line provides the energy calibration for the pionic transition. A value of (139.57077\,$\pm$\,0.00018)\,MeV/c$^{2}$ ($\pm$\,1.3ppm) is derived for the mass of the negatively charged pion, which is 4.2ppm larger than the present world average

Spongiibacter marinus gen. nov., sp. nov., a halophilic marine bacterium isolated from the boreal sponge Haliclona sp. 1

Strain HAL40bT was isolated from the marine sponge Haliclona sp. 1 collected at the Sula Ridge off the Norwegian coast and characterized by physiological, biochemical and phylogenetic analyses. The isolate was a small rod with a polar flagellum. It was aerobic, Gram-negative and oxidase- and catalase-positive. Optimal growth was observed at 20–30 °C, pH 7–9 and in 3 % NaCl. Substrate utilization tests were positive for arabinose, Tween 40 and Tween 80. Enzyme tests were positive for alkaline phosphatase, esterase lipase (C8), leucine arylamidase, acid phosphatase, naphthol-AS-BI-phosphohydrolase and N-acetyl-β-glucosaminidase. The predominant cellular fatty acid was C17 : 1 ω8, followed by C17 : 0 and C18 : 1 ω7. Analysis by matrix-assisted laser desorption/ionization time-of-flight MS was used to characterize the strain, producing a characteristic low-molecular-mass protein pattern that could be used as a fingerprint for identification of members of this species. The DNA G+C content was 69.1 mol%. Phylogenetic analysis supported by 16S rRNA gene sequence comparison classified the strain as a member of the class Gammaproteobacteria. Strain HAL40bT was only distantly related to other marine bacteria including Neptunomonas naphthovorans and Marinobacter daepoensis (type strain sequence similarity >90 %). Based on its phenotypic, physiological and phylogenetic characteristics, it is proposed that the strain should be placed into a new genus as a representative of a novel species, Spongiibacter marinus gen. nov., sp. nov.; the type strain of Spongiibacter marinus is HAL40bT (=DSM 17750T =CCUG 54896T)

Roadmap to Gigahertz Organic Transistors

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