First observation of the KS->pi0 gamma gamma decay

Using the NA48 detector at the CERN SPS, 31 KS->pi0 gamma gamma candidates with an estimated background of 13.7 +- 3.2 events have been observed. This first observation leads to a branching ratio of BR(KS->pi0 gamma gamma) = (4.9 +- 1.6(stat) +- 0.9(syst)) x 10^-8 in agreement with Chiral Perturbation theory predictions.Comment: 10 pages, 4 figures submitted to Phys. Lett.

Search for CP violation in K0 -> 3 pi0 decays

Using data taken during the year 2000 with the NA48 detector at the CERN SPS, a search for the CP violating decay K_S -> 3 pi0 has been performed. From a fit to the lifetime distribution of about 4.9 million reconstructed K0/K0bar -> 3 pi0 decays, the CP violating amplitude eta_000 = A(K_S -> 3 pi0)/A(K_L -> 3 pi0) has been found to be Re(eta_000) = -0.002 +- 0.011 +- 0.015 and Im(eta_000) = -0.003 +- 0.013 +- 0.017. This corresponds to an upper limit on the branching fraction of Br(K_S -> 3 pi0) < 7.4 x 10^-7 at 90% confidence level. The result is used to improve knowledge of Re(epsilon) and the CPT violating quantity Im(delta) via the Bell-Steinberger relation.Comment: 18 pages, 7 figures, submitted to Phys. Lett.

A precision measurement of direct CP violation in the decay of neutral kaons into two pions

The direct CP violation parameter Re(epsilon'/epsilon) has been measured from the decay rates of neutral kaons into two pions using the NA48 detector at the CERN SPS. The 2001 running period was devoted to collecting additional data under varied conditions compared to earlier years (1997-99). The new data yield the result: Re(epsilon'/epsilon) = (13.7 +/- 3.1) times 10^{-4}. Combining this result with that published from the 1997, 98 and 99 data, an overall value of Re(epsilon'/epsilon) = (14.7 +/- 2.2) times 10^{-4} is obtained from the NA48 experiment.Comment: 19 pages, 5 figures, to be published in Physics Letters

Measurement of the Ratio Gamma(KL -> pi+ pi-)/Gamma(KL -> pi e nu) and Extraction of the CP Violation Parameter |eta+-|

We present a measurement of the ratio of the decay rates Gamma(KL -> pi+ pi-)/Gamma(KL -> pi e nu), denoted as Gamma(K2pi)/Gamma(Ke3). The analysis is based on data taken during a dedicated run in 1999 by the NA48 experiment at the CERN SPS. Using a sample of 47000 K2pi and five million Ke3 decays, we find Gamma(K2pi)/Gamma(Ke3) = (4.835 +- 0.022(stat) +- 0.016(syst)) x 10^-3. From this we derive the branching ratio of the CP violating decay KL -> pi+ pi- and the CP violation parameter |eta+-|. Excluding the CP conserving direct photon emission component KL -> pi+ pi- gamma, we obtain the results BR(KL -> pi+ pi-) = (1.941 +- 0.019) x 10^-3 and |eta+-| = (2.223 +- 0.012) x 10^-3.Comment: 20 pages, 7 figures, accepted by Phys. Lett.

Measurement of K^0_e3 form factors

The semileptonic decay of the neutral K meson, KL -> pi e nu (Ke3), was used to study the strangeness-changing weak interaction of hadrons. A sample of 5.6 million reconstructed events recorded by the NA48 experiment was used to measure the Dalitz plot density. Admitting all possible Lorentz-covariant couplings, the form factors for vector (f_+(q^2)), scalar (f_S) and tensor (f_T) interactions were measured. The linear slope of the vector form factor lambda_+ = 0.0284+-0.0007+-0.0013 and values for the ratios |f_S/f_+(0)| = 0.015^{+0.007}_{-0.010}+-0.012 and |f_T/f_+(0)| = 0.05^{+0.03}_{-0.04}+-0.03 were obtained. The values for f_S and f_T are consistent with zero. Assuming only Vector-Axial vector couplings, lambda_+ = 0.0288+-0.0004+-0.0011 and a good fit consistent with pure V-A couplings were obtained. Alternatively, a fit to a dipole form factor yields a pole mass of M = 859+-18 MeV, consistent with the K^*(892) mass.Comment: 16 pages, 7 figures. submitted to Phys. Lett.

A new measurement of direct CP violation in two pion decays of the neutral kaon

The NA48 experiment at CERN has performed a new measurement of direct CP violation, based on data taken in 1997 by simultaneously collecting K_L and K_S decays into pi0pi0 and pi+pi-. The result for the CP violating parameter Re(epsilon'/epsilon) is (18.5 +/- 4.5(stat)} +/- 5.8 (syst))x10^{-4}.Comment: 18 pages, 6 figure

Measurement of the branching ratio of the decay KL -> pi e nu and extraction of the CKM parameter |Vus|

We present a new measurement of the branching ratio R of the decay KL -> pi e nu (Ke3), relative to all charged KL decays with two tracks, based on data taken with the NA48 detector at the CERN SPS. We measure R = 0.4978 +- 0.0035. From this we derive the Ke3 branching fraction and the weak coupling parameter |Vus| in the CKM matrix. We obtain |Vus|f+(0) = 0.2146 +- 0.0016, where f+(0) is the vector form factor in the Ke3 decay.Comment: 18 pages, 8 figures. accepted by Phys Lett.

Measurement of the Xi0 -> Lambda gamma Decay Asymmetry and Branching Fraction

In data taken with the NA48 experiment at the CERN SPS in 1999, 730 candidates of the weak radiative hyperon decay Xi0 -> Lambda gamma have been found with an estimated background of 58+-8 events. From these events the Xi0 -> Lambda gamma decay asymmetry has been determined to alpha(Xi0 -> Lambda gamma) = -0.78 +- 0.18_stat +- 0.06_syst, which is the first evidence of a decay asymmetry in Xi0 -> Lambda gamma. The branching fraction of the decay has been measured to be Br(Xi0 -> Lambda gamma) = (1.16 +- 0.05_stat +- 0.06_syst) x 10^-3.Comment: 15 pages, 5 figures. Accepted for publication in Phys. Lett.

Evolution of impurity incorporation during ammonothermal growth of GaN

Ammonothermally grown GaN is a promising substrate for high-power optoelectronics and electronics thanks to its scalability and high structural perfection. Despite extensive research, ammonothermal GaN still suffers from significant concentrations of impurities. This article discusses the evolution of impurity incorporation during growth of basic ammonothermal GaN, in specific whether the impurity concentration changes temporally along the growth direction and how the autoclave influences the impurity concentration. The effect of the impurities on the structural, electrical and optical properties of the grown crystal is also discussed. The chemical analysis is carried out by time of flight secondary ion mass spectroscopy (ToF-SIMS) and laser-ablation inductively-coupled plasma mass spectroscopy (LA-ICP-MS). Strain and dislocation generation caused by impurity concentration gradients and steps are studied by synchrotron radiation x-ray topography (SR-XRT). Fourier transform infrared (FTIR) reflectivity is used to determine the effect of the impurities on the free carrier concentration, and the luminescent properties are studied by low temperature photoluminescence (PL). The influence of the autoclave is studied by growing a single boule in multiple steps in several autoclaves. LA-ICP-MS and ToF-SIMS ion intensities indicate that the impurity concentrations of several species vary between different autoclaves by over an order of magnitude. SR-XRT measurements reveal strain at the growth interfaces due to impurity concentration gradients and steps. Oxygen is determined to be the most abundant impurity species, resulting in a high free carrier concentration, as determined by FTIR. The large variation in Mn concentration dramatically affects PL intensity