Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, sg, extracted from experimentally measured transition frequencies, xm, using physics based a.c. simulations, demonstrated a reduction in sg with increasing epitaxial doping concentration. The frequency scaled conductance, G/x, in strong inversion allowed the estimation of accurate Cox values for these MOS devices

Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

In this work, we investigated the effect of forming gas annealing (FGA, 5% H2/95% N2, 250 °C to 450 °C) on border trap density in high-k/InGaAs metal-oxide-semiconductor (MOS) systems using accumulation frequency dispersion and capacitance-voltage (CV) hysteresis analysis. It is demonstrated that the optimum FGA temperature that reduces the accumulation frequency dispersion is 350 °C for HfO2/n-InGaAs and 450 °C for Al2O3/n-InGaAs MOS system. Volume density of border traps (Nbt) is estimated using the accumulation frequency dispersion based on a distributed model for border traps. It is shown that for HfO2/n-InGaAs MOS system, Nbt is reduced from 9.4 × 1019 cm− 3 eV− 1 before FGA to 6.3 × 1019 cm− 3 eV− 1 following FGA at 350 °C. For the case of Al2O3/n-InGaAs MOS system, Nbt is reduced from 5.7 × 1019 cm− 3 eV− 1 for no FGA to 3.4 × 1019 cm− 3 eV− 1 for FGA at 450 °C. Furthermore, it is shown that the most pronounced reduction in border trap density estimated from CV hysteresis analysis is observed at the same optimum FGA temperature that reduces the accumulation frequency dispersion, indicating that these two techniques for border trap analysis are correlated

The Concept of Trust and the Political Economy of John Maynard Keynes, Illustrated Using Central Bank Forward Guidance and the Democratic Dilemma in Europe

Trust is an issue to which Keynesians and post-Keynesians have paid relatively little attention. However, properly understood it is an aspect of almost all activity, including key elements of socio-economic reality. Without trust, market exchange is at the very least problematic, if not impossible. Moreover, trust is intrinsic to a variety of issues with which Keynes, and subsequent Keynesianism have been concerned. In this paper we provide a general social theory conceptualisation of trust and then set out some of the areas where this concept resonates with the work of Keynes in terms of the role of conventions. Conventions quintessentially involve trust and that trust can be unstable, can be withdrawn and can require rebuilding. We illustrate this with reference to central bank policy and the Bank of England's introduction of Forward Guidance. Exploring the problem of trust in the context of banking also highlights a challenge for the continued relevance of Keynes' work. We now live in a neoliberal world and this provides a quite different context for state intervention than was previously the case. Keynes' work is now an argument for the alternative, and as such it requires more than a technical economic argument, it must also address the problem of trust in state policy-makers. We briefly illustrate the challenge this poses with reference to Europe

ALMA Discovery of a Disk around the Planetary-Mass Companion Sr 12 C

We report an Atacama Large Millimeter/submillimeter Array 0.88 mm (Band 7) continuum detection of the accretion disk around SR 12 c, an ∼11 M Jup planetary-mass companion (PMC) orbiting its host binary at 980 au. This is the first submillimeter detection of a circumplanetary disk around a wide PMC. The disk has a flux density of 127 ± 14 μJy and is not resolved by the ∼0.″1 beam, so the dust disk radius is likely less than 5 au and can be much smaller if the dust continuum is optically thick. If, however, the dust emission is optically thin, then the SR 12 c disk has a comparable dust mass to the circumplanetary disk around PDS 70 c but is about five times lower than that of the ∼12 M Jup free-floating OTS 44. This suggests that disks around bound and unbound planetary-mass objects can span a wide range of masses. The gas mass estimated with an accretion rate of 10-11 M ⊙ yr-1 implies a gas-to-dust ratio higher than 100. If cloud absorption is not significant, a nondetection of 12CO(3-2) implies a compact gas disk around SR 12 c. Future sensitive observations may detect more PMC disks at 0.88 mm flux densities of ≲ 100 μJy

Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors

This work looks at the effect on mid-gap interface state defect density estimates for In0.53Ga0.47As semiconductor capacitors when different AC voltage amplitudes are selected for a fixed voltage bias step size (100 mV) during room temperature only electrical characterization. Results are presented for Au/Ni/Al2O3/In0.53Ga0.47As/InP metal–oxide–semiconductor capacitors with (1) n-type and p-type semiconductors, (2) different Al2O3 thicknesses, (3) different In0.53Ga0.47As surface passivation concentrations of ammonium sulphide, and (4) different transfer times to the atomic layer deposition chamber after passivation treatment on the semiconductor surface—thereby demonstrating a cross-section of device characteristics. The authors set out to determine the importance of the AC voltage amplitude selection on the interface state defect density extractions and whether this selection has a combined effect with the oxide capacitance. These capacitors are prototypical of the type of gate oxide material stacks that could form equivalent metal–oxide–semiconductor field-effect transistors beyond the 32 nm technology node. The authors do not attempt to achieve the best scaled equivalent oxide thickness in this work, as our focus is on accurately extracting device properties that will allow the investigation and reduction of interface state defect densities at the high-k/III–V semiconductor interface. The operating voltage for future devices will be reduced, potentially leading to an associated reduction in the AC voltage amplitude, which will force a decrease in the signal-to-noise ratio of electrical responses and could therefore result in less accurate impedance measurements. A concern thus arises regarding the accuracy of the electrical property extractions using such impedance measurements for future devices, particularly in relation to the mid-gap interface state defect density estimated from the conductance method and from the combined high–low frequency capacitance–voltage method. The authors apply a fixed voltage step of 100 mV for all voltage sweep measurements at each AC frequency. Each of these measurements is repeated 15 times for the equidistant AC voltage amplitudes between 10 mV and 150 mV. This provides the desired AC voltage amplitude to step size ratios from 1:10 to 3:2. Our results indicate that, although the selection of the oxide capacitance is important both to the success and accuracy of the extraction method, the mid-gap interface state defect density extractions are not overly sensitive to the AC voltage amplitude employed regardless of what oxide capacitance is used in the extractions, particularly in the range from 50% below the voltage sweep step size to 50% above it. Therefore, the use of larger AC voltage amplitudes in this range to achieve a better signal-to-noise ratio during impedance measurements for future low operating voltage devices will not distort the extracted interface state defect density

Solvent and thermal stability, and pH kinetics, of proline-specific dipeptidyl peptidase IV-like enzyme from bovine serum

Proline-specific dipeptidyl peptidase-like (DPP IV; EC 3.4.14.5) activity in bovine serum has attracted little attention despite its ready availability and the paucity of useful proline-cleaving enzymes. Bovine serum DPP IV-like peptidase is very tolerant of organic solvents, particularly acetonitrile: upon incubation for 1 h at room temperature in 70% acetonitrile, 47% dimethylformamide, 54% DMSO and 33% tetrahydrofuran (v/v concentrations) followed by dilution into the standard assay mixture, the enzyme retained half of its aqueous activity. As for thermal performance in aqueous buffer, its relative activity increased up to 50 ◦C. Upon thermoinactivation at 71 ◦C, pH 8.0 (samples removed periodically, cooled on ice, then assayed under optimal conditions), residual activities over short times fit a first-order decay with a k-value of 0.071±0.0034 min−1. Over longer times, residual activities fit to a double exponential decay with k1 and k2 values of 0.218±0.025 min−1 (46±4% of overall decay) and 0.040±0.002 min−1 (54±4% of overall decay), respectively. The enzyme’s solvent and thermal tolerances suggest that it may have potential for use as a biocatalyst in industry. Kinetic analysis with the fluorogenic substrate Gly-Pro-7-aminomethylcoumarin over a range of pH values indicated two pK values at 6.18±0.07 and at 9.70±0.50. We ascribe the lower value to the active site histidine; the higher may be due to the active site serine or to a free amino group in the substrate

NMDA Receptor Activation Underlies the Loss of Spinal Dorsal Horn Neurons and the Transition to Persistent Pain after Peripheral Nerve Injury

Peripheral nerve lesions provoke apoptosis in the dorsal horn of the spinal cord. The cause of cell death, the involvement of neurons, and the relevance for the processing of somatosensory information are controversial. Here, we demonstrate in a mouse model of sciatic nerve injury that glutamate-induced neurodegeneration and loss of γ-aminobutyric acid (GABA)ergic interneurons in the superficial dorsal horn promote the transition from acute to chronic neuropathic pain. Conditional deletion of Grin1, the essential subunit of N-methyl-d-aspartate-type glutamate receptors (NMDARs), protects dorsal horn neurons from excitotoxicity and preserves GABAergic inhibition. Mice deficient in functional NMDARs exhibit normal nociceptive responses and acute pain after nerve injury, but this initial increase in pain sensitivity is reversible. Eliminating NMDARs fully prevents persistent pain-like behavior. Reduced pain in mice lacking proapoptotic Bax confirmed the significance of neurodegeneration. We conclude that NMDAR-mediated neuron death contributes to the development of chronic neuropathic pain

ALMA 0.88 mm Survey of Disks around Planetary-Mass Companions

Characterizing the physical properties and compositions of circumplanetary disks can provide important insights into the formation of giant planets and satellites. We report Atacama Large Millimeter/submillimeter Array 0.88 mm (Band 7) continuum observations of six planetary-mass (10–20 M Jup) companions: CT Cha b, 1RXS 1609 b, ROXs 12 b, ROXs 42B b, DH Tau b, and FU Tau b. No continuum sources are detected at the locations of the companions down to 3σ limits of 120–210 μJy. Given these nondetections, it is not clear whether disks around planetary-mass companions indeed follow the disk-flux–host-mass trend in the stellar regime. The faint radio brightness of these companion disks may result from a combination of fast radial drift and a lack of dust traps. Alternatively, as disks in binary systems are known to have significantly lower millimeter fluxes due to tidal interactions, these companion disks may instead follow the relationship of moderate-separation binary stars. This scenario can be tested with sensitive continuum imaging at rms levels of 10 μJy

Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes

Sc has been employed as an electron contact to a number of two-dimensional (2D) materials (e.g. MoS2, black phosphorous) and has enabled, at times, the lowest electron contact resistance. However, the extremely reactive nature of Sc leads to stringent processing requirements and metastable device performance with no true understanding of how to achieve consistent, high-performance Sc contacts. In this work, WSe2 transistors with impressive subthreshold slope (109 mV dec−1) and I ON/I OFF (106) are demonstrated without post-metallization processing by depositing Sc contacts in ultra-high vacuum (UHV) at room temperature (RT). The lowest electron Schottky barrier height (SBH) is achieved by mildly oxidizing the WSe2 in situ before metallization, which minimizes subsequent reactions between Sc and WSe2. Post metallization anneals in reducing environments (UHV, forming gas) degrade the I ON/I OFF by ~103 and increase the subthreshold slope by a factor of 10. X-ray photoelectron spectroscopy indicates the anneals increase the electron SBH by 0.4–0.5 eV and correspondingly convert 100% of the deposited Sc contacts to intermetallic or scandium oxide. Raman spectroscopy and scanning transmission electron microscopy highlight the highly exothermic reactions between Sc and WSe2, which consume at least one layer RT and at least three layers after the 400 °C anneals. The observed layer consumption necessitates multiple sacrificial WSe2 layers during fabrication. Scanning tunneling microscopy/spectroscopy elucidate the enhanced local density of states below the WSe2 Fermi level around individual Sc atoms in the WSe2 lattice, which directly connects the scandium selenide intermetallic with the unexpectedly large electron SBH. The interface chemistry and structural properties are correlated with Sc–WSe2 transistor and diode performance. The recommended combination of processing conditions and steps is provided to facilitate consistent Sc contacts to WSe2