Pengaruh Variasi Temperatur Uji ZEM-3 pada Properti Termoelektrik Lapisan Tipis Ti-doped ZnO

Lapisan tipis Ti-doped ZnO berhasil difabrikasi pada substrat kaca SiO2 dengan menggunakan metode DC Magnetron Sputtering. Proses sputtering dilakukan dalam waktu 30 menit dan dengan tegangan sebesar 339-349 Volt. Lapisan tipis yang terbentuk memiliki ketebalan 241.287 nm. Uji properti termoelektrik dilakukan pada temperatur 310 K, 373 K, 423 K, 473 K, 523 K, 573 K, dan 623 K. Hasilnya, nilai resistivitas listrik lapisan tipis menurun hingga 523 K, dengan nilai resistivitas terendahnya adalah 0.446 ρ (mΩ m). Nilai koefisien Seebeck yang dihasilkan adalah minus menandakan bahwa lapisan tipis merupakan semikonduktor tipe n. Nilai koefisien Seebeck selalu meningkat seiring dengan pertambahan temperatur. Semakin tinggi temperatur yang diberlakukan pada material semikonduktor, maka makin tinggi pula faktor dayanya. Faktor daya paling tinggi terjadi pada temperatur 573 K dengan 32 µWm-1K2

Penggunaan Metode DC Magnetron Sputtering dalam Pembuatan Lapisan Tipis Tipe N (AZO) Sebagai Modul Termoelektrik

Penelitian mengenai termoelektrik sedang gencar dikembangkan sejak tahun 1990. Pada tahun 2017, mulai dikembangkan termoelektrik yang menggunakan lapisan tipis. Pada penelitian ini, dilakukan fabrikasi termoelektrik lapisan tipis tipe N menggunakan material Zink Oxide (ZnO) di doping dengan Al2O3. Massa ZnO yang diperlukan sebanyak 20.680 gram dan Al2O3 10.079 gram. Proses fabrikasi lapisan tipis dilakukan menggunakan mesin DC Magnetron Sputtering. Tahapan-tahapan dalam melakukan penelitian ini terbagi ke dalam tiga tahapan utama yakni sintesis, fabrikasi (sputtering), dan pengujian. Proses sputtering dilakukan selama 10 menit dan substrat yang digunakan yakni kaca. Pengujian yang dilakukan yakni pengujian ketebalan menggunakan Tolansky Apparatus, pngujian XRD untuk mengetahui fasa yang terbentuk, pengujian ZEM-3 untuk mengetahui resistivitas, Koefisien Seebeck, dan power factor. Berdasarkan pengujian yang dilakukan, diperoleh ketebalan dari lapisan tipis yang terbentuk yakni 74.72 nm. Nilai Koefisien Seebeck dari lapisan tipis yang terbentuk semakin bertambah seiring kenaikan suhu sehingga dapat disimpulkan bahwa material AZO baik digunakan untuk aplikasi termoelektrik pada rentang suhu 200-350 °C

Fabrication of p-type (MCCO) thin film using DC magnetron sputtering as a preparator for thermoelectric module

Based on existing research, thermoelectric efficiency can be improved through material selection. In this study, the material used is CaCO₃ doped with Mn and Co₂O₃ to form CaCo3.5Mn0.5O9 material as a p-type thermoelectric material. The substrate used is glass. The stages in this research are material synthesis, sputtering process using DC Magnetron Sputtering machine to form thin films, and testing. The synthesis process includes grinding, calcination, and sintering. Grinding is done using a Ball Mill machine with a rotation speed of 250 rpm for 5 hours. Furthermore, the calcination step was carried out by heating the sample into a furnace at a temperature of 800°C for 10 hours. Then the sintering process was carried out at a temperature of 850°C for 12 hours. After the synthesis process is complete, enter the sputtering process using a DC Magnetron Sputtering machine for approximately 10 minutes. The gas used in this research is Argon (Ar). After the sputtering process was carried out, several tests appeared, such as the XRD test to determine the type of crystal, the ZEM-3 test to determine the Seebeck coefficient and resistivity, the thickness of the thin film formed, and the power factor test to determine the maximum voltage and power generated by the module formed. Several power factor test results were obtained, consisting of 107 μW/mK² at 100°C, 108 μW/mK² at 200°C, and 332 μW/mK² at 300°C and a thickness of 90.34 nm

Problems and Integrating Procedure of Quadcopter with Anemometer for Collect Wind Velocity Data

Wind speed profiles are generally sought by using an anemometer. However, problems occur when taking wind speed data over large areas, such as mapping the potential of wind energy in someplace. Altitude and coordinate variations will vary and difficult to executed if using a conventional anemometer. In this modern era where drones, which are unmanned Aerial Vehicles (UAVs) are increasingly used, have the prospect of being used as a tool in retrieving data. A type of drone that has an economical price is a quadcopter type drone. Integrating this drone with an anemometer will then be able to retrieve wind speed data at the coordinates and elevation. The wind speed survey process will be more accurate and can be saved in terms of cost and time. Problems and procedures in integrating these two tools will be studied in this study because both of these tools have specific characteristics such as turbulence from propeller drones that can interfere with data accuracy and sensitivity problems to the sensor anemometer that requires special attention. The development of quadcopter, including construction, modifying, and tuning, will be main issues to discuss in this journal

Improved Efficiency of Perovskite Solar Cells with Low-Temperature-Processed Carbon by Introduction of a Doping-Free Polymeric Hole Conductor

Low-temperature-processed carbon-based perovskite solar cells (C-PSCs) are promising photovoltaic devices, because of their good stability, low cost, and simple preparation methods, which allow for scalable processing. Herein, C-PSCs with the n-i-p structure are prepared, using a SnO2 nanoparticles film as the electron-selective contact, MAPbI(3) perovskite as the intrinsic absorber layer (MA = methylammonium), and a carbon layer as the hole-selective layer and conductor. Carbon is, however, not an ideal hole-selective layer and it is found that improved solar cell performance can be obtained by introducing a polymeric hole conductor between the perovskite and the carbon layer. Specifically, undoped poly(3-hexylthiophene) (P3HT) is used for this purpose, as it is stable and highly hydrophobic. For ITO/SnO2/MAPbI(3)/carbon devices, a solar cell efficiency of up to 12.8% is obtained, increasing up to 15.7% with the inclusion of a P3HT layer, which increases open-circuit potential, photocurrent, and fill factor (FF). In comparison, ITO/SnO2/MAPbI(3)/P3HT/Au devices performed rather poorly (up to 11.7%). Encouraging stability is obtained for unencapsulated C-PSC devices: P3HT/carbon devices do not show any degradation in solar cell performance upon storage for 1 month in low humidity, while they maintain 70% of their initial efficiency after 900 h at 82 degrees C in air

Enhanced Thermal Stability of Low-Temperature Processed Carbon-Based Perovskite Solar Cells by a Combined Antisolvent/Polymer Deposition Method

Low-temperature processed carbon-based perovskite solar cells have received great attention due to low-cost, high stability, and simple preparation processes that can be employed in large-scale manufacturing. Carbon paste is deposited by techniques such as doctor blading or screen printing. However, solvents from this paste can damage the perovskite or underlying layers resulting in poor performance of solar cells. Furthermore, carbon is not an ideal hole-selective contact. To overcome these issues, the antisolvent treatment is combined with the deposition of a polymeric hole conductor. Specifically, poly(3-hexylthiophene) (P3HT), added into the chlorobenzene antisolvent, improves perovskite morphology and reduces interfacial carrier recombination. As a result, the power conversion efficiency (PCE) of solar cells with the device structure SnO2/MAPbI3/P3HT/carbon increases to 12.16% from 10.6% of pristine devices without P3HT, using pure antisolvent. For poly(triarylamine) hole conductor in the same method, PCE improves only slightly to 11.1%. After 260 h of thermal stress at 82 °C, the P3HT-additive devices improve PCE up to 13.2% in air and maintain 91% of their initial efficiency over 800 h.De två första författarna delar förstaförfattarskapet</p

Investigation on the Enhancement of the Thermoelectric Power Factor of ZnO Thin Films by Al-doping using Asymmetric Bipolar Pulsed-DC Magnetron Sputtering Technology

AbstractZnO and Al-doped ZnO thin films were deposited on ceramic substrate by using an asymmetric bipolar pulsed-DC magnetron sputtering system under Ar atmosphere. Compacted ZnO powder and ZnO:Al2O3 premixed powder in copper supports were used as sputtering targets for the deposition of ZnO and Al-doped ZnO thin films, respectively. Optical emissions from the plasma during the deposition, measured using a high resolution spectrometer in the wavelength range of 360-800 nm, showed that the constituents of each target were successfully sputtered off. X-ray diffraction (XRD) analysis confirmed the formation of ZnO and Al-doped ZnO thin films of hexagonal crystal structure. The deposition rates of 24 and 15 nm/min were obtained for the ZnO and Al-dopoed ZnO thin films, respectively. The electrical conductivity and Seebeck coefficient of the thin films were measured at room temperature by the steady state and the Van der Pauw four probe methods, respectively. The increase in thermoelectric power factor of about 2 orders of magnitude was observed for the Al-doped ZnO thin films

Reduced hysteresis and enhanced air stability of low-temperature processed carbon-based perovskite solar cells by surface modification

Low temperature processed carbon-based perovskite solar cells (C-PSCs) have gained great interest because of low cost and ease of fabrication. By replacing the Au electrode with carbon, stable solar cells suited for mass-production process can be made. However, power conversion efficiencies (PCEs) of C-PSCs still lag behind that of PSCs with Au contact.Here we explore low temperature (&lt;= 150 degrees C) processed C-PSCs with, where a two-step method is used to prepare mixed-ion lead perovskite films, with tin oxide (SnO2) electron transport layer, poly(3-hexylthiophene-2,5-diyl) (P3HT) hole transport layer and carbon electrode, resulting in devices with a PCE of 14.0%. Moreover, hexyl trimethylammonium bromide (HTAB) was introduced to improve the interface between perovskite and P3HT. Perovskite grains were remarkably enlarged into micrometer-size and defects were reduced. As a result, a champion PCE of 16.1% was obtained, mainly due to enhanced fill factor from 0.67 to 0.73. The interface modification by HTAB molecule is an effective way to passivate the perovskite defects and facilitate the carrier transport at the perovskite/HTL interface. Unencapsulated devices showed excellent stability over 1500 h stored under ambient air (relative humidity -50 +/- 10%)

Thermoelectric Power Factor Enhancement by Pulsed Plasma Engineering in Magnetron Sputtering Induced Ge₂Sb₂Te₅ Thin Films

Precise control over microstructure and composition is desired prerequisite for the performance enhancement of thermoelectric materials. In conventional magnetron plasma sputtering synthesis, composition control is challenging when the sputtering-target is composed by different elements. Here, the potential of pulsed power utilization is demonstrated for compositional control of Ge₂Sb₂Te₅ thin films via pulse-reversal time and pulse-frequency engineering in pulsed DC-magnetron sputtering process. When annealed at 400 °C for 1 h in vacuum conditions, amorphous thin films (of 200 nm thickness, deposited on glass substrate) crystallize in to face centered cubic phase with average nanocrystallite size ∼10 nm. Power density enhancement to 5.56 W/cm² at low pulse reversal time induces maximum process throughput as 450 nm/min. Increase in either of pulse frequency or pulse reversal time decreases the discharge voltage and plasma density. As a consequence, kinetic energy of ions and ionization of plasma species are sequentially controlled to improve the stoichiometry of film and eventually; the electronic transport. The optimization of pulse plasma engineering yields maximum thermoelectric power factor value as 1.35 μW cm^–1 K^–2 with process throughput more than 300 nm/min. The obtained values are promising for applications in the automobile and microelectronics industry