82 research outputs found

    Non-Hermitian dispersion sign reversal of radiative resonances in two dimensions

    Full text link
    In a recent publication [Wurdack et al., Nat. Comm. 14:1026 (2023)], it was shown that in microcavities containing atomically thin semiconductors non-Hermitian quantum mechanics can lead to negative exciton polariton masses. We show that mass-sign reversal can occur generally in radiative resonances in two dimensions (without cavity) and derive conditions for it (critical dephasing threshold etc.). In monolayer transition-metal dichalcogenides, this phenomenon is not invalidated by the strong electron-hole exchange interaction, which is known to make the exciton massless

    Monolayer semiconductor nanocavity lasers with ultralow thresholds

    Get PDF
    preprin

    Towards Quantum Repeaters with Solid-State Qubits: Spin-Photon Entanglement Generation using Self-Assembled Quantum Dots

    Full text link
    In this chapter we review the use of spins in optically-active InAs quantum dots as the key physical building block for constructing a quantum repeater, with a particular focus on recent results demonstrating entanglement between a quantum memory (electron spin qubit) and a flying qubit (polarization- or frequency-encoded photonic qubit). This is a first step towards demonstrating entanglement between distant quantum memories (realized with quantum dots), which in turn is a milestone in the roadmap for building a functional quantum repeater. We also place this experimental work in context by providing an overview of quantum repeaters, their potential uses, and the challenges in implementing them.Comment: 51 pages. Expanded version of a chapter to appear in "Engineering the Atom-Photon Interaction" (Springer-Verlag, 2015; eds. A. Predojevic and M. W. Mitchell

    Waveguide Coupled Resonance Fluorescence from On-Chip Quantum Emitter

    Get PDF
    Resonantly driven quantum emitters offer a very promising route to obtain highly coherent sources of single photons required for applications in quantum information processing (QIP). Realizing this for on-chip scalable devices would be important for scientific advances and practical applications in the field of integrated quantum optics. Here we report on-chip quantum dot (QD) resonance fluorescence (RF) efficiently coupled into a single-mode waveguide, a key component of a photonic integrated circuit, with a negligible resonant laser background and show that the QD coherence is enhanced by more than a factor of 4 compared to off-resonant excitation. Single-photon behavior is confirmed under resonant excitation, and fast fluctuating charge dynamics are revealed in autocorrelation g(2) measurements. The potential for triggered operation is verified in pulsed RF. These results pave the way to a novel class of integrated quantum-optical devices for on-chip quantum information processing with embedded resonantly driven quantum emitters

    Phonon-driven spin-Floquet magneto-valleytronics in MoS2

    Get PDF
    Two-dimensional materials equipped with strong spin-orbit coupling can display novel electronic, spintronic, and topological properties originating from the breaking of time or inversion symmetry. A lot of interest has focused on the valley degrees of freedom that can be used to encode binary information. By performing ab initio time-dependent density functional simulation on MoS2, here we show that the spin is not only locked to the valley momenta but strongly coupled to the optical E '' phonon that lifts the lattice mirror symmetry. Once the phonon is pumped so as to break time-reversal symmetry, the resulting Floquet spectra of the phonon-dressed spins carry a net out-of-plane magnetization (approximate to 0.024 mu(B) for single-phonon quantum) even though the original system is non-magnetic. This dichroic magnetic response of the valley states is general for all 2H semiconducting transition-metal dichalcogenides and can be probed and controlled by infrared coherent laser excitation

    Timing, rates and spectra of human germline mutation.

    Get PDF
    Germline mutations are a driving force behind genome evolution and genetic disease. We investigated genome-wide mutation rates and spectra in multi-sibling families. The mutation rate increased with paternal age in all families, but the number of additional mutations per year differed by more than twofold between families. Meta-analysis of 6,570 mutations showed that germline methylation influences mutation rates. In contrast to somatic mutations, we found remarkable consistency in germline mutation spectra between the sexes and at different paternal ages. In parental germ line, 3.8% of mutations were mosaic, resulting in 1.3% of mutations being shared by siblings. The number of these shared mutations varied significantly between families. Our data suggest that the mutation rate per cell division is higher during both early embryogenesis and differentiation of primordial germ cells but is reduced substantially during post-pubertal spermatogenesis. These findings have important consequences for the recurrence risks of disorders caused by de novo mutations

    Large scale variation in the rate of germ-line de novo mutation, base composition, divergence and diversity in humans

    Get PDF
    It has long been suspected that the rate of mutation varies across the human genome at a large scale based on the divergence between humans and other species. However, it is now possible to directly investigate this question using the large number of de novo mutations (DNMs) that have been discovered in humans through the sequencing of trios. We investi- gate a number of questions pertaining to the distribution of mutations using more than 130,000 DNMs from three large datasets. We demonstrate that the amount and pattern of variation differs between datasets at the 1MB and 100KB scales probably as a consequence of differences in sequencing technology and processing. In particular, datasets show differ- ent patterns of correlation to genomic variables such as replication time. Never-the-less there are many commonalities between datasets, which likely represent true patterns. We show that there is variation in the mutation rate at the 100KB, 1MB and 10MB scale that can- not be explained by variation at smaller scales, however the level of this variation is modest at large scales–at the 1MB scale we infer that ~90% of regions have a mutation rate within 50% of the mean. Different types of mutation show similar levels of variation and appear to vary in concert which suggests the pattern of mutation is relatively constant across the genome. We demonstrate that variation in the mutation rate does not generate large-scale variation in GC-content, and hence that mutation bias does not maintain the isochore struc- ture of the human genome. We find that genomic features explain less than 40% of the explainable variance in the rate of DNM. As expected the rate of divergence between spe- cies is correlated to the rate of DNM. However, the correlations are weaker than expected if all the variation in divergence was due to variation in the mutation rate. We provide evidence that this is due the effect of biased gene conversion on the probability that a mutation will become fixed. In contrast to divergence, we find that most of the variation in diversity can be explained by variation in the mutation rate. Finally, we show that the correlation between divergence and DNM density declines as increasingly divergent species are considered

    Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

    Get PDF
    Chemical vapour deposition (CVD) growth is capable of producing multiple single-crystal islands of atomically thin transition metal dichalcogenides (TMDs) over large areas. Subsequent merging of perfectly epitaxial domains can lead to single-crystal monolayer sheets, a step towards scalable production of high quality TMDs. For CVD growth to be effectively harnessed for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date, characterisation has been limited to sub-0.1-mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of monolayer TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to ×20 magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm × 5.0 mm in size, and MoSe2–WS2 on SiO2/Si, 11.2 mm × 5.8 mm in size. Two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications
    corecore