Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si by the Ga-assisted method. We report on a systematic study of the occurrence of GaAs nanowire growth on silicon by the Ga-assisted method for different kinds of silicon oxides: native, thermal and hydrogen silsesquioxane (HSQ). We find that success in achieving nanowires and the growth conditions such as gallium rate and substrate temperature depend mainly on the physical properties of the surface: oxide stoichiometry, oxide thickness and surface roughness. These results constitute a step further towards the integration of GaAs technology on the Si platform. (C) 2014 Elsevier B.V. All rights reserved

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and density of self-catalyzed GaAs nanowires on Si(111) substrates by growth conditions using the self-assembly of Ga droplets. We introduce a new paradigm of the characteristic nucleation time controlled by group III flux and temperature that determine diameter and length distributions of GaAs nanowires. This insight into the growth mechanism is then used to grow nanowire forests with a completely tailored diameter-density distribution. We also show how the reflectivity of nanowire arrays can be minimized in this way. In general, this work opens new possibilities for the cost-effective and controlled fabrication of the ensembles of self-catalyzed III-V nanowires for different applications, in particular in next-generation photovoltaic devices

Characterization and analysis of InAs/p-Si heterojunction nanowire-based solar cell

The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 x 1 mm(2) array of InAs nanowires on p-type silicon for the fabrication of a solar cell. Even though the nanowires are spaced by a distance of 800 nm with a 3.3% filling volume, they absorb most of the incoming light resulting in an efficiency of 1.4%. Due to the unfavourable band alignment, carrier separation at the junction is poor. Photocurrent increases sharply at the surrounding edge with the silicon, where the nanowires do not absorb anymore. This is further proof of the enhanced absorption of semiconductors in nanowire form. This work brings further elements in the design of nanowire-based solar cells

Characterization and analysis of InAs/p-Si heterojunction nanowire-based solar cell

The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 x 1 mm(2) array of InAs nanowires on p-type silicon for the fabrication of a solar cell. Even though the nanowires are spaced by a distance of 800 nm with a 3.3% filling volume, they absorb most of the incoming light resulting in an efficiency of 1.4%. Due to the unfavourable band alignment, carrier separation at the junction is poor. Photocurrent increases sharply at the surrounding edge with the silicon, where the nanowires do not absorb anymore. This is further proof of the enhanced absorption of semiconductors in nanowire form. This work brings further elements in the design of nanowire-based solar cells

Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas

We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with the microscope the photoluminescence of the hybrid structure as a function of the emission angle by imaging the back focal plane of the objective. The precise tuning of the dimensions of the metallic elements of the nanoantenna leads to a strong variation of the directionality of the emission, being able to change this emission from backward to forward. We explain the mechanism leading to this directional emission by finite difference time domain simulations of the scattering efficiency of the antenna elements. These results cast the first step toward the realization of electrically driven optical Yagi-Uda antenna emitters based on semiconductors nanowires

Polarization response of nanowires a la carte

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization dependence in light absorption and emission. In the past, metal nanostructures have been shown to have the ability to modify and enhance the light response of nanoscale objects. Here we demonstrate that a hybrid structure formed by GaAs nanowires with a highly dense array of bow-tie antennas is able to modify the polarization response of a nanowire. As a result, the increase in light absorption for transverse polarized light changes the nanowire polarization response, including the polarization response inversion. This work will open a new path towards the widespread implementation of nanowires applications such as in photodetection, solar energy harvesting and light emission

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of GaAs nanowires on patterned Si in a reproducible way: contact angle and pinning of the Ga droplet inside the apertures achieved by the modification of the surface properties of the nanoscale areas exposed to growth. As an example, an amorphous silicon layer between the crystalline substrate and the Oxide mask results in a contact angle around 90 degrees, leading to a high yield of vertical nanowires: Another example for tuning the Contact angle is anticipated, native oxide with controlled thickness. This work opens new perspectives for the rational and reproducible growth of GaAs nanowire arrays on silicon

Plastic and Elastic Strain Fields in GaAs/Si Core-Shell Nanowires

Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was not possible before with thin film technology. In turn, this opens new avenues for applications in the areas of energy harvesting, electronics, and optoelectronics. This is particularly true for axial heterostructures, while core shell systems are limited by the appearance of strain-induced dislocations. Even more challenging is the detection and understanding of these defects. We combine geometrical phase analysis with finite element strain simulations to quantify and determine the origin of the lattice distortion in core shell nanowire structures. Such combination provides a powerful insight in the origin and characteristics of edge dislocations in such systems and quantifies their impact with the strain field map. We apply the method to heterostructures presenting single and mixed crystalline phase. Mixing crystalline phases along a nanowire turns out to be beneficial for reducing strain in mismatched core shell structures

Probing the atomic vibrations in nanostructured tin superconductors with synchrotron light (Oral contribution)

Interatomic coupling in crystalline solids gives rise to collective vibrations of the atoms. The behaviour of these atomic vibrations, i.e. phonons, influences many material properties, such as thermal and mechanical properties. Furthermore, the interaction of phonons with electrons is of crucial importance in conventional superconductivity. When reducing the system dimensions down to the nanometer scale, deviations in the phonon density of states (PDOS) with respect to the corresponding bulk PDOS are observed. These deviations are the result of phonon confinement effects and the appearance of surface phonon modes [1]. Tin is known as a superconducting material with a bulk superconducting transition temperature (Tc) of 3.72 K. An increase in Tc of up to 21% has been observed in Sn nanostructures [2]. These changes in Tc are (partially) ascribed to changes in the phonon spectrum. While the phonon spectrum of bulk systems is well understood, considerably less is known about the vibrational behaviour in nanostructures because of the difficulty of experimentally probing atomic vibrations at this scale. How can atomic vibrations be detected in nanoscale samples? To what extent are phonon effects responsible for the observed phenomena, next to other possible causes such as electron confinement effects? To measure the phonon spectrum, a special nuclear scattering technique using synchrotron radiation is used which probes specifically the 119Sn isotope. This way, only the phonon contributions are probed allowing to disentangle phonon confinement effects from electron confinement effects. Furthermore, Sn is an interesting material because of a structural transition which is little understood. The α- to β-Sn transition is very closely related to the atomic vibrations since it is mediated by the difference in vibrational entropy [3]. The Sn phase transition has been studied during an in situ experiment at the ESRF, which constitutes a very clean method of probing the PDOS since oxidation and capping layers can be avoided. Measuring the PDOS at different times during the transition allows to obtain a high level of understanding in the processes involved in the phase transition. The PDOS of α-Sn layers, β-Sn islands and cluster-assembled films have been studied at the ESRF and at the APS. [1] B. Roldan Cuenya et al., Phys. Rev. B 64, 235321 (2001) [2] B. Abeles et al., Phys. Rev. Lett. 17, 632 (1966) [3] P. Pavone et al., Phys. Rev. B 57, 10421 (1998)status: publishe