Status of the emittance transfer experiment emtex

In order to improve the injection efficiency of the round UNILAC heavy ion beam into the asymmetric acceptance of the SIS18 it would be of great advantage to decreasethe horizontal emittance by a so called emittance transferto the vertical plane. In this contribution the present statusof the emittance transfer experiment EMTEX at GSI will be reported. A short introduction about the theoretical background of the technique will be given, while the mainpart is dedicated to the practical solutions setting up a testbeam line at GSI. Finally, the results of a first commissioning beam time will be presented. The scheduled beam time to apply the emittance transfer technique foreseen in spring 2014 had to be shifted to calendar week 26 in 2014, just after this conference as some components have not been delivered in time by the contractor. The results and comparison to the theoretical predictions you may find in later publications

ATLAS pixel detector electronics and sensors

The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed

Charged-particle multiplicities in pp interactions at root s=900 GeV measured with the ATLAS detector at the LHC ATLAS Collaboration

The first measurements from proton–proton collisions recorded with the ATLAS detector at the LHC are presented. Data were collected in December 2009 using a minimum-bias trigger during collisions at a centre-of-mass energy of 900 GeV. The charged-particle multiplicity, its dependence on transverse momentum and pseudorapidity, and the relationship between mean transverse momentum and charged-particle multiplicity are measured for events with at least one charged particle in the kinematic range |η|500 MeVpT>500 MeV. The measurements are compared to Monte Carlo models of proton–proton collisions and to results from other experiments at the same centre-of-mass energy. The charged-particle multiplicity per event and unit of pseudorapidity at η=0η=0 is measured to be 1.333±0.003(stat.)±0.040(syst.)1.333±0.003(stat.)±0.040(syst.), which is 5–15% higher than the Monte Carlo models predict

Magnetic tunnel junctions with barriers fabricated by means of UV-light assisted oxidation

Ultraviolett light assisted oxidation has been applied for the first time to oxidize the barriers in ferromagnetic tunnel junctions. These consist of two ferromagnetic films separated by a thin insulating barrier layer. Samples were magnetically characterized by Magnetooptical Kerr effect rneasurements, where separate switching fields of the ferromagnetic layers were found. The measured Current-Voltage characteristics suggest electron tunnelling as the predominant transport mechanism. This shows that the new oxidation rnethod produces reliable tunnel junctions with a high yield. Area resistivities are on the order of 1 k$\Omega \mu$m$^{2}$ which is very attractive as the key device for future rnagneto random access rnemories. Magnetoresistance ratios of the tunnel elements usually ranged between 10% and 13%. Transport measurements support the theoretically supported assumption that ultraviolet light supported oxidation is self-limiting. lf the electrode resistance of tunnel elements becomes comparable to the barrier resistance, the tunnel current is no langer homogeneously distributed. To account for this effect, a geometry has been used with the current contacts at opposite edges of the tunnel junction. Some calculations and simulations were performed in order to compare this geometry with some others

Tunnel magnetoresistance devices processed by oxidation in air and UV assisted oxidation in oxygen

Tunnel magnetoresistance (TMR) devices were processed by sputter deposition of Co, Al and NiFe on oxidized Si wafers. After the Al deposition, an ex-situ oxidation in air at room temperature or an in-situ oxidation enhanced by ultraviolet (UV) irradiation in high purity oxygen at 100 mbar follows. The electrical and magnetic properties of the junctions are measured and discussed concerning specific junction resistance, magnetoresistance ratio, long time stability of the junctions, and failure rate of the processes. Some microscopic experiments provided consistent information of the tunnel barrier. MR ratios between 15% and 20% were measured for the different oxidation processes