Dielectric properties and impedance spectroscopy of NASICON type Na3_3Zr2_2Si2_2PO12_{12}

We report the temperature dependent dielectric properties and impedance spectroscopy investigation of Na$_3$Zr$_2$Si$_2$PO$_{12}$ in the frequency range of 20 Hz--2 MHz. The Rietveld refinement of x-ray diffraction pattern confirms the monoclinic phase with C2/c space group. The {\it d.c.} resistivity behavior shows its strong insulating nature at low temperatures, and follows Arrhenius law of thermal conduction with an activation energy of 0.68 eV. The decrease in electric permittivity ($\epsilon_r$) with frequency is explained based on the space polarization mechanism and its increment with temperature by thermal activation of charge carriers. The dielectric loss (D=tan$\delta$) peak follows the Arrhenius law of thermal activation with an energy of 0.25 eV. We observe an enhancement in {\it a.c.} conductivity with frequency and temperature due to the decrease in the activation energy, which results in enhancing the conduction between defect states. Further, we observe an abrupt increase in the {\it a.c.} conductivity at high frequencies, which is explained using the universal Jonschers power law. The analysis of {\it a.c.} conductivity shows two types of conduction mechanisms namely correlated barrier hopping and non-overlapping small polaron tunnelling in the measured temperature range. The imaginary part of the electric modulus confirms the non-Debye type relaxation in the sample. The shifting of the relaxation peak towards higher frequency side with an increase in temperature ensures its thermally activated nature. The scaling behavior of the electric modulus shows similar type of relaxation over the measured temperature range. The combined analysis of electric modulus and impedance with frequency shows the short-range mobility of charge carriers.Comment: submitte

Structural and thermoelectric properties of Se doped In2Te3 thin films

The Se-Te based chalcogenides exhibit novel property of Phase Change Memory (PCM) which has potential applications in electrical non-volatile memories. These materials are also suitable in thermal to electrical energy conversions and, hence, of potential interest in energy sustainability as thermoelectric devices. In this study, the Se doped In2Te3 thin films were prepared by thermal evaporation and were annealed at 250 °C and 300 °C in Argon gas. The X-ray diffraction spectra show that thermal annealing leads to the phase transitions in Se doped In2Te3 into binary phases of In2Se3 and In2Te3. The surface morphology of the films exhibits the grains of spherical nature. Annealing also decreases the energy band gap due to the presence of two phases. From the four probe and photoconductivity measurements, a large contrast in electrical resistance between the amorphous and crystalline states is found with a variation of a few orders of magnitude. The electrical transport properties such as the electrical resistivity, Seebeck coefficient and the power factor were measured in the temperature range from 300 K to 430 K. All the deposited and annealed thin films exhibit n-type conductivity with the Seebeck coefficient ranging from -338 μVK-1 to -510 μVK-1. An increase in thermoelectric power of 25% is observed in the 300 °C annealed films in comparison to the as-deposited films. Moreover, the lower Se doped In2(Te0.96Se0.04)3 compound exhibits a better thermoelectric performance compared to the In2(Te0.90Se0.1)3 composition. This study shows the multifunctional nature of Se doped In2Te3 both for PCM and thermoelectric applications

Effects of Heavy Ion Irradiation on the Thermoelectric Properties of In₂(Te_1−xSe_x)₃ Thin Films

Ion irradiation is an exceptionally effective approach to induce controlled surface modification/defects in semiconducting thin films. In this investigation, ion-irradiated Se–Te-based compounds exhibit electrical transport properties that greatly favor the transformation of waste heat into electricity. Enhancements of both the Seebeck coefficient (S) and the power factor (PF) of In2(Te0.98Se0.02)3 films under 120 MeV Ni9+ ion irradiation were examined. The maximum S value of the pristine film was about ~221 µVK−1. A significantly higher S value of about ~427 µVK−1 was obtained following irradiation at 1 × 1013 ions/cm2. The observed S values suggest the n-type conductivity of these films, in agreement with Hall measurements. Additionally, Ni ion irradiation increased the PF from ~1.23 to 4.91 µW/K2m, demonstrating that the irradiated films outperformed the pristine samples. This enhancement in the TE performance of the In2(Te0.98Se0.02)3 system is elucidated by irradiation-induced effects that are revealed by structural and morphological studies

Role of temperature in the radiation stability of yttria stabilized zirconia under swift heavy ion irradiation: A study from the perspective of nuclear reactor applications

International audienceThe search for materials that can withstand the harsh radiation environments of the nuclear industry has become an urgent challenge in the face of ever-increasing demands for nuclear energy. To this end, polycrystalline yttria stabilized zirconia (YSZ) pellets were irradiated with 80 MeV Ag6+ ions to investigate their radiation tolerance against fission fragments. To better simulate a nuclear reactor environment, the irradiations were carried out at the typical nuclear reactor temperature (850 °C). For comparison, irradiations were also performed at room temperature. Grazing incidence X-ray diffraction and Raman spectroscopy measurements reveal degradation in crystallinity for the room temperature irradiated samples. No bulk structural amorphization was however observed, whereas defect clusters were formed as indicated by transmission electron microscopy and supported by thermal spike simulation results. A significant reduction of the irradiation induced defects/damage, i.e., improvement in the radiation tolerance, was seen under irradiation at 850 ºC. This is attributed to the fact that the rapid thermal quenching of the localized hot molten zones (arising from spike in the lattice temperature upon irradiation) is confined to 850 ºC (i.e., attributed to the resistance inflicted on the rapid thermal quenching of the localized hot molten zones by the high temperature of the environment) thereby resulting in the reduction of the defects/damage produced. Our results present strong evidence for the applicability of YSZ as an inert matrix fuel in nuclear reactors, where competitive effects of radiation damage and dynamic thermal healing mechanisms may lead to a strong reduction in the damage production and thus sustain its physical integrity

Dissection of QTLs conferring drought tolerance in B. carinata derived B. juncea introgression lines

Abstract Background Drought is one of the important abiotic stresses that can significantly reduce crop yields. In India, about 24% of Brassica juncea (Indian mustard) cultivation is taken up under rainfed conditions, leading to low yields due to moisture deficit stress. Hence, there is an urgent need to improve the productivity of mustard under drought conditions. In the present study, a set of 87 B. carinata-derived B. juncea introgression lines (ILs) was developed with the goal of creating drought-tolerant genotypes. Method The experiment followed the augmented randomized complete block design with four blocks and three checks. ILs were evaluated for seed yield and its contributing traits under both rainfed and irrigated conditions in three different environments created by manipulating locations and years. To identify novel genes and alleles imparting drought tolerance, Quantitative Trait Loci (QTL) analysis was carried out. Genotyping-by-Sequencing (GBS) approach was used to construct the linkage map. Results The linkage map consisted of 5,165 SNP markers distributed across 18 chromosomes and spanning a distance of 1,671.87 cM. On average, there was a 3.09 cM gap between adjoining markers. A total of 29 additive QTLs were identified for drought tolerance; among these, 17 (58.6% of total QTLs detected) were contributed by B. carinata (BC 4), suggesting a greater contribution of B. carinata towards improving drought tolerance in the ILs. Out of 17 QTLs, 11 (64.7%) were located on the B genome, indicating more introgression segments on the B genome of B. juncea. Eight QTL hotspots, containing two or more QTLs, governing seed yield contributing traits, water use efficiency, and drought tolerance under moisture deficit stress conditions were identified. Seventeen candidate genes related to biotic and abiotic stresses, viz., SOS2, SOS2 like, NPR1, FAE1-KCS, HOT5, DNAJA1, NIA1, BRI1, RF21, ycf2, WRKY33, PAL, SAMS2, orf147, MAPK3, WRR1 and SUS, were reported in the genomic regions of identified QTLs. Conclusions The significance of B. carinata in improving drought tolerance and WUE by introducing genomic segments in Indian mustard is well demonstrated. The findings also provide valuable insights into the genetic basis of drought tolerance in mustard and pave the way for the development of drought-tolerant varieties

SARS-CoV-2–related MIS-C: A key to the viral and genetic causes of Kawasaki disease?

International audienceMultisystem inflammatory syndrome in children (MIS-C) emerged in April 2020 in communities with high COVID-19 rates. This new condition is heterogenous but resembles Kawasaki disease (KD), a well-known but poorly understood and clinically heterogenous pediatric inflammatory condition for which weak associations have been found with a myriad of viral illnesses. Epidemiological data clearly indicate that SARS-CoV-2 is the trigger for MIS-C, which typically occurs about 1 mo after infection. These findings support the hypothesis of viral triggers for the various forms of classic KD. We further suggest that rare inborn errors of immunity (IEIs) altering the immune response to SARS-CoV-2 may underlie the pathogenesis of MIS-C in some children. The discovery of monogenic IEIs underlying MIS-C would shed light on its pathogenesis, paving the way for a new genetic approach to classic KD, revisited as a heterogeneous collection of IEIs to viruses