Different origin of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N

The mechanism for the ferromagnetic order of (Ga,Mn)As and (Ga,Mn)N is extensively studied over a vast range of Mn concentrations. We calculate the electronic structures of these materials using density functional theory in both the local spin density approximation and the LDA+U scheme, that we have now implemented in the code SIESTA. For (Ga,Mn)As, the LDA+U approach leads to a hole mediated picture of the ferromagnetism, with an exchange constant $N\beta$ =~ -2.8 eV. This is smaller than that obtained with LSDA, which overestimates the exchange coupling between Mn ions and the As $p$ holes. In contrast, the ferromagnetism in wurtzite (Ga,Mn)N is caused by the double-exchange mechanism, since a hole of strong $d$ character is found at the Fermi level in both the LSDA and the LDA+U approaches. In this case the coupling between the Mn ions decays rapidly with the Mn-Mn separation. This suggests a two phases picture of the ferromagnetic order in (Ga,Mn)N, with a robust ferromagnetic phase at large Mn concentration coexisting with a diluted weak ferromagnetic phase.Comment: 12 pages, 11 figure

Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range

We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation, valid for the metallic regime. We consider an eight-band Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a ten-band model with additional dispersionless bands simulating phenomenologically the upper-mid-gap states induced by antisite and interstitial impurities. These models qualitatively account for optical-absorption experiments and predict new features in the mid-infrared Kerr angle and magnetic-circular-dichroism properties as a function of Mn concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte

Five Intermediate-Period Planets from the N2K Sample

We report the detection of five Jovian mass planets orbiting high metallicity stars. Four of these stars were first observed as part of the N2K program and exhibited low RMS velocity scatter after three consecutive observations. However, follow-up observations over the last three years now reveal the presence of longer period planets with orbital periods ranging from 21 days to a few years. HD 11506 is a G0V star with a planet of \msini = 4.74 \mjup in a 3.85 year orbit. HD 17156 is a G0V star with a 3.12 \mjup planet in a 21.2 day orbit. The eccentricity of this orbit is 0.67, one of the highest known for a planet with a relatively short period. The orbital period for this planet places it in a region of parameter space where relatively few planets have been detected. HD 125612 is a G3V star with a planet of \msini = 3.5 \mjup in a 1.4 year orbit. HD 170469 is a G5IV star with a planet of \msini = 0.67 \mjup in a 3.13 year orbit. HD 231701 is an F8V star with planet of 1.08 \mjup in a 142 day orbit. All of these stars have supersolar metallicity. Three of the five stars were observed photometrically but showed no evidence of brightness variability. A transit search conducted for HD 17156 was negative but covered only 25% of the search space and so is not conclusive.Comment: 13 pages, 9 figures, accepted ApJ Resubmitted here with some additional data, modified Keplerian orbit

Desorption of CO from individual ruthenium porphyrin molecules on a copper surface via an inelastic tunnelling process.

The coordination of CO to metalloporphyrins changes their electronic and magnetic properties. Here we locally desorb CO molecules from a single ruthenium tetraphenylporphyrin carbonyl (CO-RuTPP) on Cu(110) using STM. The desorption is triggered by the injection of holes into the occupied states of the adsorbate using an unusual two-carrier process

Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.

Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films

We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing magnetic anisotropy, with increasing Mn concentration and on low temperature annealing. We show that the uniaxial magnetic anisotropy can be clearly observed from AMR for the samples with x >= 0.02. This becomes the dominant anisotropy at elevated temperatures, and is shown to rotate by 90o on annealing. We find that the in-plane longitudinal resistivity depends not only on the relative angle between magnetization and current direction, but also on the relative angle between magnetization and the main crystalline axes. The latter term becomes much smaller after low temperature annealing. The planar Hall effect is in good agreement with the measured AMR indicating the sample is approximately in a single domain state throughout most of the magnetisation reversal, with a two-step magnetisation jump ascribed to domain wall nucleation and propagation.Comment: 27 pages, 8 figures, accepted by Phys. Rev.

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While previous reports state that GaMnAs layers thinner than 50 \AA are paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 \AA) and thick (above 50 \AA) GaMnAs layers.Comment: Proceedings of 4th International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology, September 23 - 28 (2001), Warszawa, Poland, to appear in Thin Solid Films. 24 pages, 8 figure

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V semiconductors doped with manganese atoms. The mean-field, virtual-crystal and effective-mass approximations are adopted to calculate the electronic structure, including the spin-orbit interaction, and the magnetic susceptibilities, leading to the Curie temperature. By means of these results, we attempt to understand the observed dependence of the Curie temperature of planar $\delta$-doped ferromagnetic structures on variation of their properties. We predict a large increase of the Curie Temperature by additional confinement of the holes in a $\delta$-doped layer of Mn by a quantum well.Comment: 8 pages, 7 figure

Monte Carlo simulations of an impurity band model for III-V diluted magnetic semiconductors

We report the results of a Monte Carlo study of a model of (III,Mn)V diluted magnetic semiconductors which uses an impurity band description of carriers coupled to localized Mn spins and is applicable for carrier densities below and around the metal-insulator transition. In agreement with mean field studies, we find a transition to a ferromagnetic phase at low temperatures. We compare our results for the magnetic properties with the mean field approximation, as well as with experiments, and find favorable qualitative agreement with the latter. The local Mn magnetization below the Curie temperature is found to be spatially inhomogeneous, and strongly correlated with the local carrier charge density at the Mn sites. The model contains fermions and classical spins and hence we introduce a perturbative Monte Carlo scheme to increase the speed of our simulations.Comment: 17 pages, 24 figures, 2 table