Experimental probing of the anisotropy of the empty p states near the Fermi level in MgB2

We have studied the Boron K-edge in the superconductor MgB2 by electron energy loss spectroscopy (EELS) and experimentally resolved the empty p states at the Fermi level that have previously been observed within an energy window of 0.8eV by soft x-ray absorption spectroscopy. Using angular resolved EELS, we find that these states at the immediate edge onset have pxy character in agreement with predictions from first-principle electronic structure calculations.Comment: 15 pages, 5 figure

Local boron doping quantification in homoepitaxial diamond structures

The capability of transmission electronmicroscopy (TEM) using the high angle annular dark fieldmode (HAADF,also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019cm−3 and 1021cm−3, is demonstrated. Thanks to the large relative variation of atomic number Z between carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity and spatial resolution of the technique.4 page

Direct observation of nm-scale Mg- and B-oxide phases at grain boundaries in MgB2

Here we describe the results of an atomic resolution study of the structure and composition of both the interior of the grains, and the grain boundaries in polycrystalline MgB2. We find that there is no oxygen within the bulk of the grains but significant oxygen enrichment at the grain boundaries. The majority of grain boundaries contain BOx phases smaller than the coherence length, while others contain larger areas of MgO sandwiched between BOx layers. Such results naturally explain the differences in connectivity between the grains observed by other techniques

Conserved changes in dynamics of metabolic processes during fruit development and ripening across species

Computational analyses of molecular phenotypes traditionally aim at identifying biochemical components that exhibit differential expression under various scenarios (e.g. environmental and internal perturbations) in a single species. High-throughput metabolomics technologies allow the quantification of (relative) metabolite levels across developmental stages in different tissues, organs, and species. Novel methods for analyzing the resulting multiple data tables could reveal preserved dynamics of metabolic processes across species. The problem we address in this study is 2-fold. (1) We derive a single data table, referred to as a compromise, which captures information common to the investigated set of multiple tables containing data on different fruit development and ripening stages in three climacteric (i.e. peach [Prunus persica] and two tomato [Solanum lycopersicum] cultivars, Ailsa Craig and M82) and two nonclimacteric (i.e. strawberry [Fragaria × ananassa] and pepper [Capsicum chilense]) fruits; in addition, we demonstrate the power of the method to discern similarities and differences between multiple tables by analyzing publicly available metabolomics data from three tomato ripening mutants together with two tomato cultivars. (2) We identify the conserved dynamics of metabolic processes, reflected in the data profiles of the corresponding metabolites that contribute most to the determined compromise. Our analysis is based on an extension to principal component analysis, called STATIS, in combination with pathway overenrichment analysis. Based on publicly available metabolic profiles for the investigated species, we demonstrate that STATIS can be used to identify the metabolic processes whose behavior is similarly affected during fruit development and ripening. These findings ultimately provide insights into the pathways that are essential during fruit development and ripening across species.Fil: Klie, Sebastian. Max Planck Institute of Molecular Plant Physiology; AlemaniaFil: Osorio, Sonia. Consejo Superior de Investigaciones Cientificas. Instituto de Hortofruticultura Subtropical y Mediterránea; EspañaFil: Tohge, Takayuki. Max Planck Institute of Molecular Plant Physiology; AlemaniaFil: Drincovich, Maria Fabiana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Centro de Estudios Fotosintéticos y Bioquímicos (i); ArgentinaFil: Fait, Aaron. Ben-Gurion University of the Negrev; IsraelFil: Giovannoni, Federico. Cornell University; Estados UnidosFil: Fernie, Alisdair R.. Max Planck Institute of Molecular Plant Physiology; AlemaniaFil: Nikoloski, Zoran. Max Planck Institute of Molecular Plant Physiology; Alemani

Inversion of two-band superconductivity at the critical electron doping of (Mg,Al)B-2

Electron energy-loss spectroscopy (EELS) was combined with heat capacity measurements to probe changes of electronic structure and superconductivity in Mg(1-x)AlxB2. A simultaneous decrease of EELS intensity from sigma-band hole states and the magnitude of the sigma gap was observed with increasing x, thus verifying that band filling results in the loss of strong superconductivity. These quantities extrapolated to zero at x approximate to 0.33 as inferred from the unit cell volume. However, superconductivity was not quenched completely, but persisted with T-c< 7 K up to about x approximate to 55. Only the pi band had detectable density of states for 0.33 less than or similar to x less than or similar to 0.55, implying an inversion of the two-band hierarchy of MgB2 in that regime. Since pi-band superconductivity is active in other materials such as intercalated graphite, implications for new materials with high T-c are discussed

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.Comment: 7 pages, 6 figure

Nanoscale-SiC doping for enhancing Jc and Hc2 in the Superconducting MgB2

The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping

Observation of coherent oxide precipitates in polycrystalline MgB2

Here we describe the results of an atomic resolution study of oxygen incorporation into bulk MgB2. We find that ~20-100 nm sized precipitates are formed by ordered substitution of oxygen atoms onto boron lattice sites, while the basic bulk MgB2 crystal structure and orientation is preserved. The periodicity of the oxygen ordering is dictated by the oxygen concentration in the precipitates and primarily occurs in the (010) plane. The presence of these precipitates correlates well with an improved critical current density and superconducting transition behavior, implying that they act as pinning centers.Comment: Submitted to Applied Physics Letters, 6 pages, 3 figure