We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with
ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma
oxidation, before and after rapid thermal post-annealing of the completed
structures at temperatures up to 550 deg C. Post-annealing at temperatures
above 300 deg C results in a significant decrease of the tunneling conductance
of thermally-grown barriers, while plasma-grown barriers start to change only
at annealing temperatures above 450 deg C. Fitting the experimental I-V curves
of the junctions using the results of the microscopic theory of direct
tunneling shows that the annealing of thermally-grown oxides at temperatures
above 300 deg C results in a substantial increase of their average tunnel
barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged
height of ~2.0 eV for plasma-grown layers. This difference, together with high
endurance of annealed barriers under electric stress (breakdown field above 10
MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for
advanced floating-gate memory applications.Comment: 7 pages, 6 figure