Role of the metal supply pathway on silicon patterning by oblique ion beam sputtering

The dynamics of the pattern induced on a silicon surface by oblique incidence of a 40 keV Fe ion beam is studied. The results are compared with those obtained for two reference systems, namely a noble gas ion beam either without or with Fe co-deposition. The techniques employed include Atomic Force Microscopy, Rutherford Backscattering Spectrometry, Transmission Electron Microscopy, X-ray Photoelectron and hard X-ray photoelectron spectroscopies, as well as Superconducting Quantum Interference Device measurements. The Fe-induced pattern differs from those of both reference systems since a pattern displaying short hexagonal ordering develops, although it shares some features with them. In both Fe systems a chemical pattern, with iron silicide-rich and -poor regions, is formed upon prolonged irradiation. The metal pathway has a marked influence on the patterns’ morphological properties and on the spatial correlation between the chemical and morphological patterns. It also determines the iron silicide stoichiometry and the surface pattern magnetic properties that are better for the Fe-implanted system. These results show that in ion-beam-induced silicon surface patterning with reactive metals, the metal supply pathway is critical to determine not only the morphological pattern properties, but also the chemical and magnetic one

Efectos sobre la salud humana de los campos magnéticos y eléctricos de muy baja frecuencia (ELF)

El presente documento, promovido por la Dirección General de Seguridad y Salud Laboral de la Consejería de Empleo de la Junta de Andalucía, dentro de la Acción 77 del Plan General de Prevención de Riesgos Laborales 2003-2008, pretende establecer el marco teórico actual de conocimiento sobre los campos ELF; explicar los conceptos fundamentales de los mismos y las fuentes que los generan; establecer los principales efectos biológicos que se producen en los seres humanos a causa de su exposición, y las posibles enfermedades que son motivo de estudio. Asimismo, se establece una comparación entre las dos guías comentadas anteriormente sobre niveles de exposición, y que tienen un reconocimiento importante a nivel internacional. También son objeto de análisis los principales tipos de estudios (epidemiológicos, de laboratorio, etc…); los niveles de exposición poblacionales, tanto para el público en general como para el ocupacional; los métodos de medida e instrumentación empleados; las posibles medidas de protección y prevención; y la normativa relacionada con los campos magnéticos ELF. Se citan además las líneas de investigación recomendadas por la Organización Mundial de la Salud para completar las lagunas existentes de la base científica desarrollada. Finalmente, cabe decir que se ha pretendido citar los principales documentos de recopilaciones bibliográficas, cuya consulta pueda proporcionar información más detallada cuando ésta se requiera.Consejería de Empleo. Junta de Andalucía. Españ

Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery

Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semiconductor and, at higher boron concentrations, a superconductor. Nevertheless, the preparation of superconducting boron-doped diamond by ion implantation is hampered by amorphization and subsequent graphitization after annealing. The aim of this work was to explore the possibility of creating boron-doped diamond superconducting regions and to provide a new perspective on the damage induced in diamond by MeV ion irradiation. Thus, a comprehensive analysis of the damage and eventual recovery of diamond when irradiated with 9 MeV B ions with different fluences has been carried out, combining Raman, photoluminescence, electrical resistivity, X-ray diffraction and Rutherford Backscattering/Ion-channeling. It is found that, as the B fluence increases, carbon migrates to interstitial sites outside of the implantation path and an amorphous fraction increases within the path. For low fluences (∼1015 ions/cm2), annealing at 1000 °C is capable to fully recovering the diamond structure without graphitization. However, for higher fluences (≥5 × 1016 ions/cm2), those required for superconductivity, the recovery is important, but some disorder still remains. For high fluences, annealing at 1200 °C is detrimental for the diamond lattice and graphite traces appear. The incomplete healing of the diamond lattice and the interstitial location of B can explain that optimally doped samples do not exhibit superconductivityThis work has been partially supported by the Ministerio de Ciencia e Innovacion ´ of Spain (Project grants PID2020-112770RB-C22/MCIN/ AEI/10.13039/501100011033, PID2021-127033OB-C21/MCIN/AEI/ 10.13039/501100011033, and PID2021-127498NB-I00/AEI/FEDER/ 10.13039/501100011033). We also acknowledge financial support from MCIN/AEI/10.13039/501100011033, through the “María de Maeztu” Programme for Units of Excellence in R&D (CEX2018-000805- M), as well as from the Autonomous Community of Madrid through program S2018/NMT-4321 (NANOMAGCOST-CM

Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N+ implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distributed across the quantum well structure. Despite the extremely high fluences used (up to 4 ×1016 cm-2), the InGaN MQWs exhibit a high stability against ion beam mixing

Quantitative chemical mapping of InGaN quantum wells from calibrated high-angle annular dark field micrographs

We present a simple and robust method to acquire quantitative maps of compositional fluctuations in nanostructures from low magnification high-angle annular dark field (HAADF) micrographs calibrated by energy-dispersive X-ray (EDX) spectroscopy in scanning transmission electron microscopy (STEM) mode. We show that a nonuniform background in HAADF-STEM micrographs can be eliminated, to a first approximation, by use of a suitable analytic function. The uncertainty in probe position when collecting an EDX spectrum renders the calibration of HAADF-STEM micrographs indirect, and a statistical approach has been developed to determine the position with confidence. Our analysis procedure, presented in a flowchart to facilitate the successful implementation of the method by users, was applied to discontinuous InGaN/GaN quantum wells in order to obtain quantitative determinations of compositional fluctuations on the nanoscale

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Indium incorporation into wurtzite (0001)-oriented InxAlyGa1−x−yN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565–635 °C) and the AlN mole fraction (0.01<y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In–N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TE

Randomized phase II trial of FOLFIRI-panitumumab compared with FOLFIRI alone in patients with RAS wild-type circulating tumor DNA metastatic colorectal cancer beyond progression to first-line FOLFOX-panitumumab : the BEYOND study (GEMCAD 17-01)

Altres ajuts: Fundació la Marató de TV3 (201330.10); Fundacion Olga Torres (Modalitat A. 2019/2020); Spanish Association Against Cancer (AECC, PROYE19040POST_001).Purpose: Panitumumab plus FOLFOX (P-FOLFOX) is standard first-line treatment for RAS wild-type (WT) metastatic colorectal cancer. The value of panitumumab rechallenge is currently unknown. We assessed addition of panitumumab to FOLFIRI (P-FOLFIRI) beyond progression to P-FOLFOX in patients with no RAS mutations in liquid biopsy (LB). Methods: In this randomized phase II trial, patients were assigned (3:2 ratio) to second-line P-FOLFIRI (arm A) or FOLFIRI alone (arm B). LB for circulating tumor DNA analysis was collected at study entry and at disease progression. Primary endpoint was 6-month progression-free survival. Two-stage Simon design required 85 patients to be included (EudraCT 2017-004519-38). Results: Between February 2019 and November 2020, 49 patients were screened (16 RAS mutations in LB detected) and 31 included (18 assigned to arm A and 13 to arm B). The study was prematurely closed due to inadequate recruitment. Serious adverse events were more frequent in arm A (44% vs. 23%). Overall response rate was 33% (arm A) vs. 7.7% (arm B). Six-month progression-free survival rate was 66.7% (arm A) and 38.5% (arm B). Median progression-free survival was 11.0 months (arm A) and 4.0 months (arm B) (hazard ratio, 0.58). At disease progression, RAS or BRAF mutations in LB were found in 4/11 patients (36%) in arm A and 2/10 (20%) in arm B. Conclusions: The BEYOND study suggests a meaningful benefit of P-FOLFIRI beyond progression to P-FOLFOX in metastatic colorectal cancer patients with WT RAS status selected by LB. This strategy deserves further investigation

Cost Model Developed in European Project LIMA

[EN] In this paper we show the results of the cost model developed in LIMA project (Seventh Framework Programme, CN: 248909). The LIMA project is entitled "Improve photovoltaic efficiency by applying novel effects at the limits of light to matter interaction". The project started in January 2010 and during this year a cost model of the device developed in the project has been developed to assess the industrial viability of this innovative approach to increase the efficiency and reduce the cost of photovoltaic solar cells. During 2011 the cost model has been actualized and a new scenario has been defined. The LIMA project exploits cutting edge photonic technologies to enhance silicon solar cell efficiencies with new concepts in nanostructured materials. It proposes nanostructured surface layers designed to increase the light absorption in the solar cell while decreasing the surface and interface recombination loss. The integration on a back contact solar cell further reduces these interface losses and avoids shading. The project improves light-matter interaction by the use a surface plasmonic nanoparticle layer. This reduces reflection and efficiently couples incident radiation into the solar cell where it is trapped by internal reflection. Surface and interface recombination are minimized by using silicon quantum dot superlattices in a passivating matrix.This work has been carried out in the framework of the LIMA Project. The European Commission is gratefully acknowledged for financial support under Contract number FP7-248909.Vazquez, M.; Mihailetchi, V.; Connolly, JP.; Cubero García, OJ.; Daly, G.; Halm, A.; Kopecek, R.... (2012). Cost Model Developed in European Project LIMA. Energy Procedia. 27:646-651. https://doi.org/10.1016/j.egypro.2012.07.123S6466512

Metabolic-associated fatty liver disease: from simple steatosis towards liver cirrhosis and potential complications. Proceedings of the Third Translational Hepatology Meeting, endorsed by the Spanish Association for the Study of the Liver (AEEH)

This is a meeting report of the 3rd Translational Hepatology Meeting held in Alicante, Spain, in October 2021. The meeting, which was organized by the Spanish Association for the Study of the Liver (AEEH), provided an update on the recent advances in the field of basic and translational hepatology, with a particular focus on the molecular and cellular mechanisms and therapeutic targets involved in metabolic-associated fatty liver disease (MAFLD), metabolic-associated steatohepatitis (MASH), cirrhosis and end-stage hepatocellular carcinoma (HCC).S