Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations

We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a direct measurement of the parallel conductance and no ad hoc assumptions on the symmetry of the transistors are necessary. Thus we can make a comparison between our data and theoretical predictions without any adjustable parameter. Even for rather weakly conducting transistors significant deviations from the perturbative results are noted. On the other hand, path integral Monte Carlo calculations show remarkable agreement with experiments for the whole range of temperatures and conductances.Comment: 8 pages, 7 figures, revtex4, corrected typos, submitted to PR

Self-Energy Correction to the Two-Photon Decay Width in Hydrogenlike Atoms

We investigate the gauge invariance of the leading logarithmic radiative correction to the two-photon decay width in hydrogenlike atoms. It is shown that an effective treatment of the correction using a Lamb-shift "potential" leads to equivalent results in both the length as well as the velocity gauges provided all relevant correction terms are taken into account. Specifically, the relevant radiative corrections are related to the energies that enter into the propagator denominators, to the Hamiltonian, to the wave functions, and to the energy conservation condition that holds between the two photons; the form of all of these effects is different in the two gauges, but the final result is shown to be gauge invariant, as it should be. Although the actual calculation only involves integrations over nonrelativistic hydrogenic Green functions, the derivation of the leading logarithmic correction can be regarded as slightly more complex than that of other typical logarithmic terms. The dominant radiative correction to the 2S two-photon decay width is found to be -2.020536 (alpha/pi) (Zalpha)^2 ln[(Zalpha)^-2] in units of the leading nonrelativistic expression. This result is in agreement with a length-gauge calculation [S. G. Karshenboim and V. G. Ivanov, e-print physics/9702027], where the coefficient was given as -2.025(1).Comment: 9 pages, RevTe

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AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.Comment: 20 pages, 9 figures, to be published in NIM

Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 k$\Omega$. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, $V_{1/2}$, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, $\Delta V_{1/2}$, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, $\Delta G$. The constant of proportionality is a function of the ratio of the junction and quantum resistances, $R/R_{\rm q}$, and it is a pure strong tunneling effect.Comment: LaTeX file + five postscript figure

On a biphononic origin of the 1125 cm^(-1) absorption band in cuprous oxide

We report on the IR spectroscopic studies in both reflection (50-900 cm^{-1}) and transmission (900-3000 cm^{-1}) mode of the vibration spectrum of the cuprous oxide. A detailed analysis based on a comparison of the temperature dependences of the absorption band at 1125 cm^{-1} and of IR and Raman active fundamental vibrations results in assignment of the former to a biphonon.Comment: 5 pages, 5 figures (to appear in Phys.Lett. A

Nonresonant effects in one- and two-photon transitions

We investigate nonresonant contributions to resonant Rayleigh scattering cross sections of atoms. The problematic nonresonant contributions set a limit to the accuracy to which atomic spectra determine energy levels. We discuss the off-resonance effects in one-photon transitions. We also show that off-resonance contributions for the 1S-2S two-photon transition in atomic hydrogen are negligible at current and projected levels of experimental accuracy. The possibility of a differential measurement for the detection of off-resonance effects in one-photon transitions in atomic hydrogen is discussed.Comment: 13 pages, LaTeX, 3 figures; submitted to Can. J. Phys. (Oct 2001); discussion of one-photon transitions enhance

Ly alpha escape during cosmological hydrogen recombination: the 3d-1s and 3s-1s two-photon processes

We give a formulation of the radiative transfer equation for Lyman alpha photons which allows us to include the two-photon corrections for the 3s-1s and 3d-1s decay channels during cosmological hydrogen recombination. We use this equation to compute the corrections to the Sobolev escape probability for Lyman alpha photons during hydrogen recombination, which then allow us to calculate the changes in the free electron fraction and CMB temperature and polarization power spectra. We show that the effective escape probability changes by DP/P ~+ 11% at z~1400 in comparison with the one obtained using the Sobolev approximation. This speeds up of hydrogen recombination by DN_e/N_e ~- 1.6% at z~1190, implying |DC_l/C_l| ~1%-3% at l >~ 1500 with shifts in the positions of the maxima and minima in the CMB power spectra. These corrections will be important for the analysis of future CMB data. The total correction is the result of the superposition of three independent processes, related to (i) time-dependent aspects of the problem, (ii) corrections due to quantum mechanical deviations in the shape of the emission and absorption profiles in the vicinity of the Lyman alpha line from the normal Lorentzian, and (iii) a thermodynamic correction factor, which occurs to be very important. All these corrections are neglected in the Sobolev-approximation, but they are important in the context of future CMB observations. All three can be naturally obtained in the two-photon formulation of the Lyman alpha absorption process. However, the corrections (i) and (iii) can also be deduced in the normal '1+1' photon language, without necessarily going to the two-photon picture. Therefore only (ii) is really related to the quantum mechanical aspects of the two-photon process (abridged)Comment: 30 pages, 21 figures, submitted to A&

Nonequilibrium Electron Distribution in Presence of Kondo Impurities

We study the energy relaxation of quasiparticles in voltage biased mesoscopic wires in presence of magnetic impurities. The renormalization of the exchange interaction of Kondo impurities coupled to conduction electrons is extended to the case of a nonequilibrium electron distribution, which is determined self-consistently from a Boltzmann equation with a collision term due to Kondo impurity mediated electron-electron scattering. The approach leads to predictions in quantitative agreement with recent experiments by Pothier et al. [Phys. Rev. Lett. 79, 3490 (1997)].Comment: 4 pages, 3 figure

Non-equlibrium effects in transport through quantum dots

The role of non-equilibrium effects in the conductance through quantum dots is investigated. Associated with single-electron tunneling are shake-up processes and the formation of excitonic-like resonances. They change qualitatively the low temperature properties of the system. We analyze by quantum Monte Carlo methods the renormalization of the effective capacitance and the gate-voltage dependent conductance. Experimental relevance is discussed.Comment: 10 pages, 8 postscript figure