Full size single-sided GaAs microstrip detectors with integrated coupling
capacitors and bias resistors have been fabricated on 3'' substrate wafers.
PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling
capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made
of sputtered CERMET using simple lift of technique. The sheet resistivity of 78
kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 /
degree C satisfy the demands of small area biasing resistors, working on a wide
temperature range.Comment: 20 pages, 9 figures, to be published in NIM
