Investigation of the Purcell effect in photonic crystal cavities with a 3D Finite Element Maxwell Solver

Photonic crystal cavities facilitate novel applications demanding the efficient emission of incoherent light. This unique property arises when combining a relatively high quality factor of the cavity modes with a tight spatial constriction of the modes. While spontaneous emission is desired in these applications the stimulated emission must be kept low. A measure for the spontaneous emission enhancement is the local density of optical states (LDOS). Due to the complicated three dimensional geometry of photonic crystal cavities the LDOS quantity has to be computed numerically. In this work, we present the computation of the LDOS by means of a 3D Finite Element (FE) Maxwell Solver. The solver applies a sophisticated symmetry handling to reduce the problem size and provides perfectly matched layers to simulate open boundaries. Different photonic crystal cavity designs have been investigated for their spontaneous emission enhancement by means of this FE solver. The simulation results have been compared to photoluminescence characterizations of fabricated cavities. The excellent agreement of simulations and characterizations results confirms the performance and the accuracy of the 3D FE Maxwell Solve

Investigation of the Purcell effect in photonic crystal cavities with a 3D Finite Element Maxwell Solver

Photonic crystal cavities facilitate novel applications demanding the efficient emission of incoherent light. This unique property arises when combining a relatively high quality factor of the cavity modes with a tight spatial constriction of the modes. While spontaneous emission is desired in these applications the stimulated emission must be kept low. A measure for the spontaneous emission enhancement is the local density of optical states (LDOS). Due to the complicated three dimensional geometry of photonic crystal cavities the LDOS quantity has to be computed numerically. In this work, we present the computation of the LDOS by means of a 3D Finite Element (FE) Maxwell Solver. The solver applies a sophisticated symmetry handling to reduce the problem size and provides perfectly matched layers to simulate open boundaries. Different photonic crystal cavity designs have been investigated for their spontaneous emission enhancement by means of this FE solver. The simulation results have been compared to photoluminescence characterizations of fabricated cavities. The excellent agreement of simulations and characterizations results confirms the performance and the accuracy of the 3D FE Maxwell Solve

Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1-100) and diameters (i.e., 220-640 nm) fabricated on the same wafer substrate to prove the feasibility of employing the vertical 3D architecture concept towards massively parallel electronic integration, particularly for logic circuitry and metrological applications. A top-down approach combining both inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching is applied in the realization of vertically aligned GaN NWs on metalorganic vapor-phase epitaxy (MOVPE)-based GaN thin films with specific doping profiles. The FETs are fabricated involving a stack of n-p-n GaN layers with embedded inverted p-channel, top drain bridging contact, and wrap-around gating technology. From the electrical characterization of the integrated NWs, a threshold voltage (Vth) of (6.6 ± 0.3) V is obtained, which is sufficient for safely operating these devices in an enhancement mode (E-mode). Aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) is used as the gate dielectric material resulting in nearly-zero gate hysteresis (i.e., forward and backward sweep Vth shift (ΔVth) of ~0.2 V). Regardless of the required device processing optimization for having better linearity profile, the upscaling capability of the devices from single NW to NW array in terms of the produced currents could already be demonstrated. Thus, the presented concept is expected to bridge the nanoworld into the macroscopic world, and subsequently paves the way to the realization of innovative large-scale vertical GaN nanoelectronics

The 2020 UV emitter roadmap

Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm—due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments

Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs

Gefördert durch den Publikationsfonds der Universität Kassel© 2014 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited

Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process

Calculation of optical gain in AlGaN quantum wells for ultraviolet emission

Gefördert durch den Publikationsfonds der Universität Kasse

Germanium Plasmon Enhanced Resonators for Label-Free Terahertz Protein Sensing

A Terahertz protein sensing concept based on subwavelength Ge resonators is presented. Ge bowtie resonators, compatible with CMOS fabrication technology, have been designed and characterized with a resonance frequency of 0.5 THz and calculated local intensity enhancement of 10.000. Selective biofunctionalization of Ge resonators on Si wafer was achieved in one step using lipoic acid-HaloTag ligand (LA-HTL) for biofunctionalization and passivation. The results lay the foundation for future investigation of protein tertiary structure and the dynamics of protein hydration shell in response to protein conformation changes

Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators

Localized Surface Plasmon Resonances (LSPR) based on highly doped semiconductors microstructures, such as antennas, can be engineered to exhibit resonant features at THz frequencies. In this work, we demonstrate plasmonic antennas with increased quality factor LSPRs from Fano coupling to dark modes. We also discuss the advances in the biofunctionalization of n-doped Ge antennas for specific protein immobilization and cell interfacing. Finally, albumin biolayers with a thickness of a few hundred nanometers are used to demonstrate the performance of the fano-coupled n-Ge antennas as sensors. A resonant change of over 10% in transmission, due to the presence of the biolayer, can be detected within a bandwidth of only 20 GHz