Disability and quality of life in patients with fibromyalgia

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A 380 GHz SIS receiver using Nb/AlO(x)/Nb junctions for a radioastronomical balloon-borne experiment: PRONAOS

The superheterodyne detection technique used for the spectrometer instrument of the PRONAOS project will provide a very high spectral resolution (delta nu/nu = 10(exp -6)). The most critical components are those located at the front-end of the receiver: their contribution dominates the total noise of the receiver. Therefore, it is important to perform accurate studies for specific components, such as mixers and multipliers working in the submillimeter wave range. Difficulties in generating enough local oscillator (LO) power at high frequencies make SIS mixers very desirable for operation above 300 GHz. The low LO power requirements and the low noise temperature of these mixers are the primary reason for building an SIS receiver. This paper reports the successful fabrication of small (less than or equal to 1 sq micron) Nb/Al-O(x)/Nb junctions and arrays with excellent I-V characteristics and very good reliability, resulting in a low noise receiver performance measured in the 368/380 GHz frequency range

Gaseous chemistry for a Titan's atmospheric plasma experimental simulation

We present the first study of gaseous composition monitoring for the PAMPRE experiment, which simulates Titan's atmospheric chemistry by radio-frequency N 2-CH 4 plasma. Methane consumption is quantified for various N 2-CH 4 gas mixtures. Moreover in situ mass spectrometry (MS) and ex-situ gas chromatography coupled with mass spectrometry (GC-MS) analyses reveal a large dominance of nitrile species in the gas phase chemistry

Shear Wave Imaging of Passive Diastolic Myocardial Stiffness: Stunned Versus Infarcted Myocardium

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Potential barrier heights at metal on oxygen-terminated diamond interfaces

International audienceElectrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that of R.T. Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones; (b) annealed at 350°C; (c) annealed at 450°C, with characteristic barrier heights of 2.2-2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.Les propriétés électriques et structurales d'interfaces métal/diamant et métal/oxyde/diamant où le métal est le Zirconium et le semi-conducteur comporte un empilement de couches faiblement et fortement dopées au bore sur substrat Ib, sont étudiées expérimentalement et comparées à différents modèles. Dans le barrière de Schottky, une inter-couche d'oxyde d'environ 2 couches atomiques, mise en évidence par diverses techniques de microscopie électronique à transmission, est présente et ajoutée à la présence d'inhomogénéités de barrière de potentiel, est corrélée aux propriétés électriques simulées par un modèle qui généralise celui de R. T. Tung [Phys. Rev. B 45, 13509 (1992)] . Les paramètres physiquement caractéristiques des interfaces (a) non recuites, (b) recuite à 350°C et (c) recuite à 450°C peuvent ainsi être extraits, en particulier des hauteurs de barrière de 2.2-2.5 V dans le cas (a) et aussi basses que 0.96 V dans le cas (c). Les modèles possibles de fixation du niveau de Fermi aux interfaces métal/diamant sont examinés et confrontés aux données récemment publiées pour différents métaux sur la surface oxygénée du diamant. On conclue que les quantités physiques judicieuses sont l'affinité électronique du diamant, fonction de son état de surface, pour justifier l'allure générale conforme au modèle de Mott-Schottky et la force du dipole d'interface, dépendante des liaisons chimiques à l'interface, pour expliquer la pente de la variation de la barrière en fonction du travail de sortie du métal, qui est inversée par rapport à tous les autres semi-conducteurs

Mapping Myocardial Fiber Orientation Using Echocardiography-Based Shear Wave Imaging

The assessment of disrupted myocardial fiber arrangement may help to understand and diagnose hypertrophic or ischemic cardiomyopathy. We hereby proposed and developed shear wave imaging (SWI), which is an echocardiography-based, noninvasive, real-time, and easy-to-use technique, to map myofiber orientation. Five in vitro porcine and three in vivo open-chest ovine hearts were studied. Known in physics, shear wave propagates faster along than across the fiber direction. SWI is a technique that can generate shear waves travelling in different directions with respect to each myocardial layer. SWI further analyzed the shear wave velocity across the entire left-ventricular (LV) myocardial thickness, ranging between 10 (diastole) and 25 mm (systole), with a resolution of 0.2 mm in the middle segment of the LV anterior wall region. The fiber angle at each myocardial layer was thus estimated by finding the maximum shear wave speed. In the in vitro porcine myocardium (n=5), the SWI-estimated fiber angles gradually changed from +80° ± 7° (endocardium) to +30° ± 13° (midwall) and-40° ± 10° (epicardium) with 0° aligning with the circumference of the heart. This transmural fiber orientation was well correlated with histology findings (r2=0.91± 0.02, p<0.0001). SWI further succeeded in mapping the transmural fiber orientation in three beating ovine hearts in vivo. At midsystole, the average fiber orientation exhibited 71° ± 13° (endocardium), 27° ± 8° (midwall), and-26° ± 30° (epicardium). We demonstrated the capability of SWI in mapping myocardial fiber orientation in vitro and in vivo. SWI may serve as a new tool for the noninvasive characterization of myocardial fiber structure. © 2012 IEEE.published_or_final_versio

X-ray white beam topography of self-organized domains in flux-grown BaTiO3 single crystals

The phenomenon of self-organization of domains into a “square-net pattern” in single-crystal, flux-grown BaTiO3 several degrees below the ferroelectric to paraelectric phase transition was investigated using in situ synchrotron x-ray topography. The tetragonal distortion of the crystal was determined by measuring the angular separation between the diffraction images received from 90° a and c domains in the projection topographs, and shows a rapid decrease towards 110 °C, the onset temperature for self-organization. The onset of self-organization is accompanied by bending of the {100} lattice planes parallel to the crystal surface, which produces a strain that persists up to and beyond the Curie temperature, where the crystal becomes cubic and the self-organized domains disappear. At the Curie point, the bending angle α100=8.1(±0.3)mrad is at a maximum and corresponds to the radius of curvature of the surface being 16.3(±0.6) mm

Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET

Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a (001) Ib nitrogen-doped high pressure high temperature diamond substrate. Taking advantage of the new concept of the non-volatile diamond-based photo switch, it is demonstrated that it is possible to tune the normally-on and normally-off states of the transistor by configuring the pn-junction space charge region. The devices under study was designed following an interdigital-like and a circular-like architectures presenting low threshold voltages (between 3 V and −3 V), an on/off ratio of 107 and a critical electric field numerically assessed of 9 MV.cm−1 at room temperature. This new degree of freedom opens the route for diamond based power electronics.8 página