159 research outputs found
Determinació del contingut de metalls pesants en fangs residuals per a poder ésser aplicats al sòl
Hom anomena fangs residuals el subproducte de la depuració d'aigües. Són materials molt heterogènis que, per llur riquesa en matèria orgà nica, nitrogen, fòsfor i altres nutrients, poden esser emprats com a fertilitzants i condicionadors de sòls; però aquesta aplicació resta
limitada per llur contingut en metalls pesants, el qual pot Ă©sser variable principalment en funciĂł de l'origen de 1'aigua.
En aquest treball hom ha estudiat, al llarg d'un any, la concentraciĂł en diferents metalls, de fangs procedents de catorze depuradores, la majoria de Catalunya, i n'han estat preses mostres cada dos mesos; ha estat posat de manifest que sĂłn materials molt heterogenis respecte
a llur contingut en metalls pesants, i que la majoria de fangs estudiats podrien ésser reutilitzats a través del sòl per la baixa concentració que presenten en metalls pesants
Probing multivalent interactions in a synthetic host-guest complex by dynamic force spectroscopy
Multivalency is present in many biological and synthetic systems. Successful application of multivalency depends on a correct understanding of the thermodynamics and kinetics of this phenomenon. In this Article, we address the stability and strength of multivalent bonds with force spectroscopy techniques employing a synthetic adamantane/β-cyclodextrin model system. Comparing the experimental findings to theoretical predictions for the rupture force and the kinetic off-rate, we find that when the valency of the complex is increased from mono- to di- to trivalent, there is a transition from quasi-equilibrium, with a constant rupture force of 99 pN, to a kinetically dependent state, with loading-rate-dependent rupture forces from 140 to 184 pN (divalent) and 175 to 210 pN (trivalent). Additional binding geometries, parallel monovalent ruptures, single-bound divalent ruptures, and single- and double-bound trivalent ruptures are identified. The experimental kinetic off-rates of the multivalent complexes show that the stability of the complexes is significantly enhanced with the number of bonds, in agreement with the predictions of a noncooperative multivalent model
Lanreotide Autogel 120 mg at extended dosing intervals in patients with acromegaly biochemically controlled with octreotide LAR: The LEAD study
Objective: To evaluate extended dosing intervals (EDIs) with lanreotide Autogel 120 mg in patients with acromegaly previously biochemically controlled with octreotide LAR 10 or 20 mg. Design and methods: Patients with acromegaly had received octreotide LAR 10 or 20 mg/4 weeks for R6 months and had normal IGF1 levels. Lanreotide Autogel 120 mg was administered every 6 weeks for 24 weeks (phase 1); depending on week-24 IGF1 levels, treatment was then administered every 4, 6 or 8 weeks for a further 24 weeks (phase 2). Hormone levels, patient-reported outcomes and adverse events were assessed. Primary endpoint: proportion of patients on 6- or 8-week EDIs with normal IGF1 levels at week 48 (study end). Results: 107/124 patients completed the study (15 withdrew from phase 1 and two from phase 2). Of 124 patients enrolled, 77.4% were allocated to 6- or 8-week EDIs in phase 2 and 75.8% (95% CI: 68.3-83.3) had normal IGF1 levels at week 48 with the EDI (primary analysis). A total of 88.7% (83.1-94.3) had normal IGF1 levels after 24 weeks with 6-weekly dosing. GH levels were ≤2.5 mg/l in >90% of patients after 24 and 48 weeks. Patient preferences for lanreotide Autogel 120 mg every 4, 6 or 8 weeks over octreotide LAR every 4 weeks were high. Conclusions: Patients with acromegaly achieving biochemical control with octreotide LAR 10 or 20 mg/4 weeks are possible candidates for lanreotide Autogel 120 mg EDIs. EDIs are effective and well received among such patients
Observation of exclusive DVCS in polarized electron beam asymmetry measurements
We report the first results of the beam spin asymmetry measured in the
reaction e + p -> e + p + gamma at a beam energy of 4.25 GeV. A large asymmetry
with a sin(phi) modulation is observed, as predicted for the interference term
of Deeply Virtual Compton Scattering and the Bethe-Heitler process. The
amplitude of this modulation is alpha = 0.202 +/- 0.028. In leading-order and
leading-twist pQCD, the alpha is directly proportional to the imaginary part of
the DVCS amplitude.Comment: 6 pages, 5 figure
Search for the standard model Higgs boson in tau final states
We present a search for the standard model Higgs boson using hadronically
decaying tau leptons, in 1 inverse femtobarn of data collected with the D0
detector at the Fermilab Tevatron ppbar collider. We select two final states:
tau plus missing transverse energy and b jets, and tau+ tau- plus jets. These
final states are sensitive to a combination of associated W/Z boson plus Higgs
boson, vector boson fusion and gluon-gluon fusion production processes. The
observed ratio of the combined limit on the Higgs production cross section at
the 95% C.L. to the standard model expectation is 29 for a Higgs boson mass of
115 GeV.Comment: publication versio
Measurement of the p-pbar -> Wgamma + X cross section at sqrt(s) = 1.96 TeV and WWgamma anomalous coupling limits
The WWgamma triple gauge boson coupling parameters are studied using p-pbar
-> l nu gamma + X (l = e,mu) events at sqrt(s) = 1.96 TeV. The data were
collected with the DO detector from an integrated luminosity of 162 pb^{-1}
delivered by the Fermilab Tevatron Collider. The cross section times branching
fraction for p-pbar -> W(gamma) + X -> l nu gamma + X with E_T^{gamma} > 8 GeV
and Delta R_{l gamma} > 0.7 is 14.8 +/- 1.6 (stat) +/- 1.0 (syst) +/- 1.0 (lum)
pb. The one-dimensional 95% confidence level limits on anomalous couplings are
-0.88 < Delta kappa_{gamma} < 0.96 and -0.20 < lambda_{gamma} < 0.20.Comment: Submitted to Phys. Rev. D Rapid Communication
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and hyperspectral cathodoluminescence imaging (CL) provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a materials' light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires
Search for W' bosons decaying to an electron and a neutrino with the D0 detector
This Letter describes the search for a new heavy charged gauge boson W'
decaying into an electron and a neutrino. The data were collected with the D0
detector at the Fermilab Tevatron proton-antiproton Collider at a
center-of-mass energy of 1.96 TeV, and correspond to an integrated luminosity
of about 1 inverse femtobarn. Lacking any significant excess in the data in
comparison with known processes, an upper limit is set on the production cross
section times branching fraction, and a W' boson with mass below 1.00 TeV can
be excluded at the 95% C.L., assuming standard-model-like couplings to
fermions. This result significantly improves upon previous limits, and is the
most stringent to date.Comment: submitted to Phys. Rev. Let
- …