Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage. Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission electron microscopy, we investigate the origins of leakage paths and show that they result from the preferential incorporation of oxygen impurities on the side wall facets of the inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant increase in the breakdown voltage can be achieved even in much thinner buffer layer structures. These results demonstrate the importance of controlling the morphology of the high electron mobility transistor buffer layer as even at a very low density the leakage paths identified would provide leakage paths in large area devices.This work was funded by the Engineering and Physical Sciences Research Council under Grant Code Nos. EP/K014471/1 and EP/N01202X/1 and the European Research Council under the European Community's Seventh Framework Programme Grant Agreement No. 279361 (MACONS)

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

We have demonstrated enhancement mode operation of AlInN/GaN (MIS)HEMTs on Si substrates using the fluorine treatment technique. The plasma RF power and treatment time was optimized to prevent the penetration of the fluorine into the channel region to maintain high channel conductivity and transconductance. An analysis of the threshold voltage was carried out which defined the requirement for the fluorine sheet concentration to exceed the charge at the dielectric/AlInN interface to achieve an increase in the positive threshold voltage after deposition of the dielectric. This illustrates the importance of control of both the plasma conditions and the interfacial charge for a reproducible threshold voltage. A positive threshold voltage of +3 V was achieved with a maximum drain current of 367 mA mm−1 at a forward gate bias of 10 V.The authors acknowledge financial support from the Engineering and Physics Sciences Research Council (EPSRC) under EP/K014471/1 (Silicon Compatible GaN Power Electronics)

All-GaN Integrated Cascode Heterojunction Field Effect Transistors

All-GaN integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine treatment and a metal-insulator-semiconductor gate structure on the enhancement mode part. The cascode device exhibited an output current of 300 mA/mm by matching the current drivability of both enhancement and depletion mode parts. The optimisation was achieved by shifting the threshold voltage of the depletion mode section to a more negative value with the addition of a dielectric layer under the gate. The switching performance of the cascode was compared to the equivalent GaN enhancement-mode-only device by measuring the hard switching speed at 200 V under an inductive load in a double pulse tester. For the first time, we demonstrate the switching speed advantage of the cascode over equivalent GaN enhancement-mode-only devices, due to the reduced Miller-effect and the unique switching mechanisms. These observations suggest that practical power switches at high power and high switching frequency will benefit as part of an integrated cascode configuration.This work was funded by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom, under EP/K014471/1 (Silicon Compatible GaN Power Electronics)

Quivers, words and fundamentals

40 pages + Appendices, 9 figures40 pages + Appendices, 9 figure

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.This work was funded by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom, under EP/K014471/1 (Silicon Compatible GaN Power Electronics)

Characterization of p-GaN1−x_{1−x} Asx_{x}/n-GaN PN junction diodes

The structural properties and electrical conduction mechanisms of p-type amorphous GaN$_{1−x}$ As$_{x}$ /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5 × 10$^{19}$ cm$^{-3}$ is achieved which allows a specific contact resistance of 1.3 × 10$^{-4}$ Ω cm$^{2}$. An increased gallium beam equivalent pressure during growth produces reduced resistivity but can result in the formation of a polycrystalline structure. The conduction mechanism is found to be influenced by the crystallinity of the structure. Temperature dependent current voltage characteristics at low forward bias (<0.35 V) show that conduction is recombination dominated in the amorphous structure whereas a transition from tunneling to recombination is observed in the polycrystalline structure. At higher bias, the currents are space charge limited due to the low carrier density in the n-type region. In reverse bias, tunneling current dominates at low bias (<0.3 V) and recombination current becomes dominant at higher reverse bias.This work was undertaken with support from the EPSRC (EP/K014471/1)

Boundaries of Semantic Distraction: Dominance and Lexicality Act at Retrieval

Three experiments investigated memory for semantic information with the goal of determining boundary conditions for the manifestation of semantic auditory distraction. Irrelevant speech disrupted the free recall of semantic category-exemplars to an equal degree regardless of whether the speech coincided with presentation or test phases of the task (Experiment 1) and occurred regardless of whether it comprised random words or coherent sentences (Experiment 2). The effects of background speech were greater when the irrelevant speech was semantically related to the to-be-remembered material, but only when the irrelevant words were high in output dominance (Experiment 3). The implications of these findings in relation to the processing of task material and the processing of background speech is discussed

Tales from the Drop Zone: roles, risks and dramaturgical dilemmas

This paper critically revisits conventional understandings of ethnographic fieldwork roles, arguing that representations of the covert insider as heroic and adventurous are often idealistic and unrealistic. Drawing on one of the authors’ experiences of being both a covert and overt researcher in an ethnographic study of skydiving, we identify some of the dramaturgical dilemmas that can unexpectedly affect relations with participants throughout the research process. Our overall aim is to highlight how issues of trust, betrayal, exposure and vulnerability, together with the practical considerations of field research, combine to shape the researcher’s interactional strategies of identity work

Using Visual Cues to Enhance Haptic Feedback for Palpation on Virtual Model of Soft Tissue

This paper explores methods that make use of visual cues aimed at generating actual haptic sensation to the user, namely pseudo-haptics. We propose a new pseudo-haptic feedback based method capable of conveying 3D haptic information and combining visual haptics with force feedback to enhance the user’s haptic experience. We focused on an application related to tumor identification during palpation and evaluated the proposed method in an experimental study where users interacted with a haptic device and graphical interface while exploring a virtual model of soft tissue, which represented stiffness distribution of a silicone phantom tissue with embedded hard inclusions. The performance of hard inclusion detection using force feedback only, pseudo-haptic feedback only, and the combination of the two feedbacks were compared with the direct hand touch. The combination method and direct hand touch had no significant difference in the detection results. Compared with the force feedback alone, our method increased the sensitivity by 5%, the positive predictive value by 4%, and decreased detection time by 48.7%. The proposed methodology has great potential for robot-assisted minimally invasive surgery and in all applications where remote haptic feedback is needed