A very convenient setup to generate intense VUV coherent light at 125 nm with use of nonlinear effects in mercury vapor at room temperature

Using only one dye laser, efficient generation of VUV radiation (10^13 photons/pulse) is demonstrated at 125.140 nm and 125.053 nm by four-wave sum-frequency mixing in a room-temperature mercury vapor. The emission at 125.053 nm, which is out of two-photon resonance but near three-photon resonance, has been observed for the first time and is carefully analyzed. In particular, numerical calculations have been carried out for gaussian pump beams taking into account absorption of VUV photons and optical Kerr effect. The results of the calculations reproduce the VUV emission lineshape and power saturation effects measured in the experiment

Polarization properties of coherent VUV light at 125 nm generated by sum frequency four wave mixing in mercury

International audienceThe polarization of the VUV light generated by four-wave sum frequency mixing process w4 = 2w1 +w2 in mercury vapor at room temperature is analyzed in detail. Due to the specific two-photon transition used to enhance the nonlinear process, the polarization of the VUV wave is shown to be identical to the polarization of the wave at the frequency w2. In particular, circularly polarized VUV is observed with degree of circular polarization exceeding 0.99

Nanometric TiO 2 as NBBs for functional organic-inorganic hybrids with efficient interfacial charge transfer

International audienceThe purpose of this work is to establish a fabrication method for new electronic materials: organic-inorganic p-MAPTMS / titanium-oxo-alkoxy hybrids. The size-selected 5.2-nm TiO 2 nanoparticles (Nano Building Blocks-NBB) are generated in a sol-gel reactor with turbulent fluids micromixing. The surface exchange between propoxy and MAPTMS groups under vacuum pumping results in a stable nanoparticulate precursor available for 2-photon laser polymerisation. The hybrids demonstrate quantum yield of photoinduced charges separation 6 % and can steadily trap photoinduced electrons at number density of 6% Ti atoms. The materials are suitable for 3D-microstructuring

Exciton and interband optical transitions in hBN single crystal

Near band gap photoluminescence (PL) of hBN single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by the D-series previously assigned to excitons trapped on structural defects. A much weaker S-series of self-trapped excitons at 5.778 eV and 5.804 eV has been observed using time-window PL technique. The S-series excitation spectrum shows a strong peak at 6.02 eV, assigned to free exciton absorption. Complementary photoconductivity and PL measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV

Electronic Band Transitions in γ-Ge3N4

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Support from Estonian Research Council grant PUT PRG 619 is gratefully acknowledged. The multi-anvil experiments at LMV were supported by the French Government Laboratory of Excellence initiative no ANR-10-LABX-0006, the Région Auvergne and the European Regional Development Fund (ClerVolc Contribution Number 478).Electronic band structure in germanium nitride having spinel structure, γ-Ge3N4, was examined using two spectroscopic techniques, cathodoluminescence and synchrotron-based photoluminescence. The sample purity was confirmed by x-ray diffraction and Raman analyses. The spectroscopic measurements provided first experimental evidence of a large free exciton binding energy De≈0.30 eV and direct interband transitions in this material. The band gap energy Eg = 3.65 ± 0.05 eV measured with a higher precision was in agreement with that previously obtained via XES/XANES method. The screened hybrid functional Heyd–Scuseria–Ernzerhof (HSE06) calculations of the electronic structure supported the experimental results. Based on the experimental data and theoretical calculations, the limiting efficiency of the excitation conversion to light was estimated and compared with that of w-GaN, which is the basic material of commercial light emitting diodes. The high conversion efficiency, very high hardness and rigidity combined with a thermal stability in air up to ~ 700 °C reveal the potential of γ-Ge3N4 for robust and efficient photonic emitters. © 2021, The Korean Institute of Metals and Materials. Published under the CC BY license.Euratom research and training programme 2014-2018 633053; Eesti Teadusagentuur ANR-10-LABX-0006, PUT PRG 619; ERDF; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2

Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation

We report on the UV laser induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation of the surface under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (VN), or multiple (m-VN with m = 2 or 3) nitrogen vacancies. A structured fluorescence band between 300 nm and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 340 nm, assigned to VN vacancies on surface, is observed under vacuum and quenched by adsorbed molecular oxygen. UV-irradiation of h-BN under vacuum results in a broad asymmetric fluorescence at ~400 nm assigned to m-VN vacancies; further irradiation breaks more B-N bonds enriching the surface with elemental boron. However, no boron deposit appears under irradiation of samples in ambient atmosphere. This effect is explained by oxygen healing of radiation-induced surface defects. Formation of the oxide layer prevents B-N dissociation and preserves the bulk sample stoichiometry

Femtosecond and Ultraviolet Laser Irradiation of Graphite-Like Hexagonal Boron Nitride

Effect of the femtosecond and nanosecond UV laser irradiation (below the ablation threshold) of graphite-like hexagonal boron nitride (hBN) has been studied. Experiments were carried out with the compacted powder under high vacuum at room temperature using excimer KrF laser (248 nm). In the nanosecond operation mode, the laser-induced fluorescence spectra are found strongly modified depending on the integrated doze, which is attributed to a progressive enrichment of the surface layer by elemental boron. A slow sample recovery after the laser irradiation has been observed. On the other hand, in the femtosecond mode the fluorescence spectra depend on the laser fluence, and the changes are reversible: low energy fluorescence spectra are restored immediately when the laser energy decreases. This effect can be explained by a material bleaching, which favors a bulk centers emission. The ablation threshold has been determined as 78 mJ/cm2 in the femtosecond laser operational mode

Photoluminescence and electronic transitions in cubic silicon nitride

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Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation

International audienceWe report on the UV laser induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation of the surface under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (VN), or multiple (m-VN with m = 2 or 3) nitrogen vacancies. A structured fluorescence band between 300 nm and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 340 nm, assigned to VN vacancies on surface, is observed under vacuum and quenched by adsorbed molecular oxygen. UV-irradiation of h-BN under vacuum results in a broad asymmetric fluorescence at ~400 nm assigned to m-VN vacancies; further irradiation breaks more B-N bonds enriching the surface with elemental boron. However, no boron deposit appears under irradiation of samples in ambient atmosphere. This effect is explained by oxygen healing of radiation-induced surface defects. Formation of the oxide layer prevents B-N dissociation and preserves the bulk sample stoichiometry