8 research outputs found

    Growth and characterization of gallium arsenide on silicon-on-sapphire and silicon

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    A study has been conducted to investigate and compare the growth, strain, defects, electrical and optical properties of GaAs layers grown simultaneously on silicon-on-sapphire (SOS) and Si substrates using a two-step metalorganic chemical vapor deposition (MOCVD) growth procedure. A variety of techniques have been used to characterize and investigate the different properties of these two layers. Among them, x-ray diffraction was used to determine the lattice dimensions and thereby the sign of residual strain, x-ray rocking procedures to measure the strain and crystallinity, and variable temperature x-ray diffraction to investigate the temperature dependence of residual strain. Scanning electron microscopy (SEM) was used to examine the surface morphology. Transmission electron microscopy (TEM) was used to observe the microstructure and defect distribution as well as defect density. Also secondary ion mass spectroscopy (SIMS) was used to study the cross-diffusion from substrates. In addition, capacitance-voltage (C-V) measurements and Hall-effect measurements were used to determine the carrier concentration and mobility. Finally, photoluminescence (PL) was used to observe the low-temperature optical response of GaAs layers. The results of these investigations of GaAs on SOS and Si substrates are compared as a function of the thickness of GaAs layers. Finally, the effects of residual strain, presence of defects and cross-diffusion of Si on electrical and optical properties of GaAs layers are discussed.U of I OnlyETDs are only available to UIUC Users without author permissio

    Lessons learned from dengue: Focus on Taiwan

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    This chapter outlines the current views on dengue disease, epidemiology, treatment and prevention worldwide and with a focus on the Taiwan experience. Geographical differences in virus spread and in clinical profiles are revealed, as well as ongoing research efforts towards a safe and effective dengue vaccine

    Negative regulation of type I interferon signaling by integrin-linked kinase permits dengue virus replication.

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    Dengue virus (DENV) infection can induce life-threatening dengue hemorrhagic fever/dengue shock syndrome in infected patients. DENV is a threat to global health due to its growing numbers and incidence of infection in the last 50 years. During infection, DENV expresses ten structural and nonstructural proteins modulating cell responses to benefit viral replication. However, the lack of knowledge regarding the cellular proteins and their functions in enhancing DENV pathogenesis impedes the development of antiviral drugs and therapies against fatal DENV infection. Here, we identified that integrin-linked kinase (ILK) is a novel enhancing factor for DENV infection by suppressing type I interferon (IFN) responses. Mechanistically, ILK binds DENV NS1 and NS3, activates Akt and Erk, and induces NF-ÎșB-driven suppressor of cytokine signaling 3 (SOCS3) expression. Elevated SOCS3 in DENV-infected cells inhibits phosphorylation of STAT1/2 and expression of interferon-stimulated genes (ISGs). Inhibiting ILK, Akt, or Erk activation abrogates SOCS3 expression. In DENV-infected mice, the treatment of an ILK inhibitor significantly reduces viral loads in the brains, disease severity, and mortality rate. Collectively, our results show that ILK is a potential therapeutic target against DENV infection
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