19 research outputs found

    A revision of the descriptions of ectomycorrhizas published since 1961

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    Polycrystalline SiC growth and characterization

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    Growth of 3C-SiC on (100) Si wafers has been carried out by low pressure chemical vapor deposition (LPCVD), using a H(2) + SiH(4) + C(3)H(8) gas mixture at about 1000 degreesC. No carbonization layer was performed. Micro-Raman measurements yield the presence of microcrystalline SiC matrix, while neither carbon nor silicon clusterization in amorphous phase was detected with optimized deposition conditions. Transmission electron microscopy has been used to analyze the orientation of the films and the surface growth: the presence of voids and edge dislocations at the interface was revealed

    Feature Distribution Learning for Covariate Shift Adaptation Using Sparse Filtering

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    We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters
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