543 research outputs found
La mimesi della regressione alla prova dell’ordine simbolico: una pratica artistica regressiva
The mimesis of regression is an artistic strategy that challenges the symbolic order. This challenge has some controversial points, since on the one hand the symbolic order proves to be extremely resistant as it manages to integrate the mimesis of regression in its structure, on the other hand the mimesis of regression itself seems to facilitate its integration by repeating the representation of the object without politicizing it. In the first section of this paper I analyse some of the most representative works based on the mimesis of regression; in the second section, I examine the controversial points in the relationship between the mimesis of regression and the symbolic order, aiming to demonstrate that the mimesis of regression loses its challenge, since it emerges to confirm the symbolic order
analysis and reliability study of luminescent materials for white lighting
In this work, we report on the characterization and reliability/stability study of phosphorescent materials for lighting applications. More specifically, we investigated (a) phosphors directly deposited over light-emitting diodes (LED) chip, (b) remote phosphor (RP) solutions encapsulated in plastic medium for LED lighting, and (c) phosphors without binder for extreme high-intensity laser diode white lighting. The optical and thermal properties of phosphors were studied to develop a sample based on a mix of phosphor compounds in order to achieve different correlated color temperatures (CCT) and high color rendering index (CRI) LEDs. Thermal properties of cerium-doped YAG (Yttrium Aluminum Garnet) phosphor materials were evaluated in order to study thermal quenching. A maximum phosphor operating temperature of 190–200 °C was found to cause a sensible efficiency degeneration. Reduced efficiency and Stokes shift also caused a localized temperature increase in the photoluminescent materials. In the case of remote phosphors, heat did not find a low thermal resistance path to the heatsink (as occurred through the GaN LED chip for direct phosphor-converted devices) and thermal analysis indicated that material temperature might therefore increase to values in excess of 60 °C when a radiation of 435 mW/cm2 hit the sample template. Reliability was also investigated for both plastic-encapsulated materials and binder-free depositions. Pure thermal reliability study indicated that phosphors encapsulated in polycarbonate material were stable up to temperature of approximately 100 °C, while binder-free phosphor did not show any sensible degradation up to temperatures of 525 °C
Technology and reliability of normally-off GaN HEMTs with p-type gate
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues
Structural dichroism in the antiferromagnetic insulating phase of V_2O_3
We performed near-edge x-ray absorption spectroscopy (XANES) at V K edge in
the antiferromagnetic insulating (AFI) phase of a 2.8% Cr-doped V_2O_3 single
crystal. Linear dichroism of several percent is measured in the hexagonal plane
and found to be in good agreement with ab-initio calculations based on multiple
scattering theory. This experiment definitively proves the structural origin of
the signal and therefore solves a controversy raised by previous
interpretations of the same dichroism as non-reciprocal. It also calls for a
further investigation of the role of the magnetoelectric annealing procedure in
cooling to the AFI phase.Comment: 4 pages 3 figures. To be published in Phys. Rev. B (2005
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
Abstract This paper reports an overview of the most relevant trapping and degradation mechanisms that limit the performance and lifetime of GaN-based transistors for application in power electronics. Results obtained on state-of-the-art devices are described and discussed throughout the paper, with the aim of providing a clear description of the topic. The first part of the paper deals with the issue of dynamic-Ron: after describing a robust test strategy for the analysis of the pulsed characteristics of the devices, we discuss the voltage- and temperature-dependent pulsed I-V characteristics of 650 V-rated transistors, and the physical origin of dynamic Ron in these devices. The results demonstrate that through proper buffer optimization it is possible to reach negligible trapping at high voltage. The properties of the traps responsible for dynamic-Ron are also discussed in detail in the paper, based on drain-current transient data. A specific discussion is devoted to hot-electron trapping processes, that – under hard switching conditions – may lead to significant modifications in the resistance of the 2DEG. The second part of the paper deals with device degradation: based on a wide set of experimental results, we describe the physical mechanisms responsible for the worsening of the properties of the devices. More specifically, we demonstrate that stress in off-state conditions may result in measurable changes in the pinch-off voltage, mostly consisting in a negative-threshold instability (NBTI). The origin of this shift is discussed in detail; we also demonstrate that in a real-life cascode configuration (where a low, subthreshold leakage current flows through the device in the off-state), NBTI effects are mitigated. Finally, we discuss the stability of the gate-stack, induced by the exposure to positive gate bias
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs
In this paper we separately investigate the role of electric field and device self-heating (SHE) in enhancing the charge emission process from Fe-related buffer traps (0.52 eV from Ec) in AlGaN/GaN High Electron Mobility Transistors (HEMTs). The experimental analysis was performed by means of Drain Current Transient (DCT) measurements for either i) different dissipated power (PD,steady) at constant drain-to-source bias (VDS,steady) or ii) constant PD,steady at different VDS,steady. We found that i) an increase in PD,steady yields an acceleration in the thermally activated emission process, consistently with the temperature rise induced by SHE. On the other hand, ii) the field effect turned out to be negligible within the investigated voltage range, indicating the absence of Poole-Frenkel effect (PFE). A qualitative analysis based on the electric field values obtained by numerical simulations is then presented to support the interpretation and conclusions
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability
We propose to use a bilayer insulator (2.5 nm Al2O3 + 35 nm SiO2) as an alternative to a conventional uni-layer Al2O3 (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. We demonstrate that devices with the bilayer dielectric present superior reliability characteristics than those with the uni-layer, including: (i) gate leakage two-orders of magnitude lower; (ii) 11 V higher off-state drain breakdown voltage; and (iii) 18 V higher gate-source breakdown voltage. From Weibull slope extractions, the uni-layer shows an extrinsic failure, while the bilayer presents a wear-out mechanism. Extended reliability tests investigate the degradation process, and hot-spots are identified through electroluminescence microscopy. TCAD simulations, in good agreement with measurements, reflect electric field distribution near breakdown for gate and drain stresses, demonstrating a higher electric field during positive gate stress. Furthermore, DC capability of the bilayer and unilayer insulators are found to be comparable for same bias points. Finally, comparison of trapping processes through double pulsed and V-th transient methods confirms that the V-th shifts are similar, despite the additional interface present in the bilayer devices
Nonequilibrium Green's Function Modeling of Trap-Assisted Tunneling in In_{x}Ga_{1-x}N/GaN Light-Emitting Diodes
This work presents an investigation of carrier transport in GaN-based light-emitting diodes in the subthreshold forward-bias regime where tunneling processes are relevant. A quantum kinetic theory of trap-assisted tunneling is developed within the framework of the nonequilibrium Green’s function formalism. Based on fully nonlocal scattering self-energies computed in the self-consistent Born approximation and a multiband description of the electronic structure, the model provides access to spectral quantities, such as the local density of states and the current density, which are essential to understand the nature of the tunneling process. The quantum nonradiative recombination rates can be reproduced by the conventional Shockley-Read-Hall theory, provided that the classical charge is replaced with the correct quantum charge, which means that trap-assisted tunneling can be described with drift-diffusion solvers complemented with appropriate quantum corrections for the calculation of the local density of states. The subthreshold I-V characteristics and ideality factors predicted by the quantum kinetic model are in agreement with measurements
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
We propose a model for the gate capacitance of GaN-based trench-gate metal-oxide-semiconductor transistors, based on combined measurements, analytical calculations and TCAD simulations. The trench capacitance is found to be equivalent to four different capacitors, used to model the various regions with different doping and orientation of the semiconductor/dielectric interface. In addition, we demonstrate and explain the characteristic double-hump behavior of the G-D and G-DS capacitance of trench-MOSFETs. Lastly, a TCAD simulation results accurately reproduce the experimental data, thus confirming the interpretation on the double hump behavior, and providing insight on the electron density at the gate interface. (C) 2020 The Japan Society of Applied Physic
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