Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

We report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO₃/Nb-doped SrTiO₃ interface.This work was supported by the National Natural Science Foundation of China (Grant Nos. 11074193 and 51132001). Q.L. and Y.L. acknowledge the support of the Australian Research Council (ARC) in the form of ARC Discovery Grants

Effect of Ce and Zr codoping on the multiferroic properties of BiFeO

Pure BiFeO3(BFO), Ce-doped BiFeO3(BCFO), Zr-doped BiFeO3(BFZO), as well as Ce- and Zr-codoped BiFeO3(BCFZO) thin films were successfully prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The effects of Ce and Zr doping on the structure, surface morphology, electrical and magnetic properties of BFO films were studied. X-ray diffraction and atomic force microscopy analysis revealed structure transition and decreased grain sizes in the doped BFO films. In comparison with the other doped BFO films studied here, the Ce- and Zr-codoped BCFZO film showed the lowest dielectric loss and leakage current density and exhibited a well-squared hysteresis loop with a remanent polarization Pr of 64 μC/cm2 and a coercive electric field Ec of 339 kV/cm, as well as the fatigue-free characteristics. Meanwhile, the largest magnetization was also observed in this codoped film. The possible reasons for the enhancement of the ferroelectricity and the ferromagnetism of these films were discussed