Substrate coherency-driven octahedral rotations in perovskite oxide films

We perform first-principles density functional calculations to explore the role of substrate proximity effects on the octahedral rotation patterns in perovskite oxide superlattices. With cubic perovskite SrFeO$_3$ as our model film and tetragonal SrTiO$_3$ as the substrate, we show that in most cases the substrate octahedral rotation patterns propagate into the film across the heterointerface. We also identify elastic boundary conditions for which the enforced structural coherence induces atomic displacement patterns that are not found in the bulk phase diagram of either individual constituent. We suggest that such substrate coherency-induced octahedral texturing of thin film oxides is a promising approach for tuning the electronic structure of functional oxide thin films.Comment: 5 pages, 4 figure

BaNiF4: an electric field-switchable weak antiferromagnet

We show that in the antiferromagnetic ferroelectric BaNiF4 the Dzyaloshinskii-Moriya interaction leads to a small canting of the magnetic moments, away from the easy axis, resulting in a noncollinear magnetic structure. The canting corresponds to an additional "weak" antiferromagnetic order parameter whose orientation is determined by the polar structural distortion and can be reversed by switching the ferroelectric polarization with an electric field. Our results point the way to a more general coupling mechanism between structural distortions and magnetic order parameters in magnetoelectric multiferroics which can be exploited in the design of electric field-switchable magnets.Comment: 4 pages, 4 figure

Interplay between strain, defect charge state and functionality in complex oxides

We use first-principles calculations to investigate the interplay between strain and the charge state of point defect impurities in complex oxides. Our work is motivated by recent interest in using defects as active elements to provide novel functionality in coherent epitaxial films. Using oxygen vacancies as model point defects, and CaMnO$_3$ and MnO as model materials, we calculate the changes in internal strain caused by changing the charge state of the vacancies, and conversely the effect of strain on charge-state stability. Our results show that the charge state is a degree of freedom that can be used to control the interaction of defects with strain and hence the concentration and location of defects in epitaxial films. We propose the use of field-effect gating to reversibly change the charge state of defects and hence the internal strain and corresponding strain-induced functionalities.Comment: 4 pages, 4 figure

High-temperature multiferroicity and strong magnetocrystalline anisotropy in 3d-5d double perovskites

Using density functional calculations we explore the properties of as-yet-unsynthesized $3d - 5d$ ordered double perovskites ($A_2BB'$O$_6$) with highly polarizable Bi$^{3+}$ ions on the $A$ site. We find that the Bi$_2$NiReO$_6$ and Bi$_2$MnReO$_6$ compounds are insulating and exhibit a robust net magnetization that persists above room temperature. When the in-plane lattice vectors of the pseudocubic unit cell are constrained to be orthogonal (for example, by coherent heteroepitaxy), the ground states are ferroelectric with large polarization and a very large uniaxial magnetocrystalline anisotropy with easy axis along the ferroelectric polarization direction. Our results suggest a route to multiferroism and electrically controlled magnetization orientation at room temperature

Self-interaction correction with Wannier functions

We describe the behavior of the Perdew-Zunger self-interaction-corrected local density approximation (SIC-LDA) functional when implemented in a plane-wave pseudopotential formalism with Wannier functions. Prototypical semiconductors and wide-bandgap oxides show a large overcorrection of the LDA bandgap. Application to transition-metal oxides and elements with d electrons is hindered by a serious breaking of the spherical symmetry, which appears even in a closed shell free atom. Our results indicate that, when all spherical approximations are lifted, the general applicability of orbital-dependent potentials is very limited and should be reconsidered in favor of rotationally invariant functionals.Comment: 10 pages, 5 figure