Addiction to technological gadgets and its impact on health and lifestyle: a study on college students

In the present era the introduction of modern technological gadgets has captured the attention of global population. The dependency of people on these technological gadgets and services provided by these has reached at such level that, without these, they can’t think a step forward in the direction of their growth. The degree of dependency is leading to addiction of the tech-devices and services. Youth is the most vulnerable group among the population to be addicted to technology. The study was designed to examine the use of tech-devices by youth i.e. the time spent with the gadgets, the purposes behind use, and its impacts on mental health and life style. Using structured questionnaire, unstructured interviews and observation by the researcher, primary data were collected from 150 respondents of NIT, Rourkela. Findings of the study showed that most of the young respondents spend a large amount of their time with their tech-gadgets and services provided by them. The purposes of use in most cases are pleasure driven rather than necessity driven. Again, it reveals that addiction to tech-devices has many negative impacts on the aspects relating to mental health of the respondents and has become a causal factor in the change of life style of young participants. The results are interpreted based on the current theories and implications for future are pointed out

Magnetotransport in polycrystalline La2/3_{2/3}Sr1/3_{1/3}MnO3_{3} thin films of controlled granularity

Polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) thin films were synthesized by pulsed laser ablation on single crystal (100) yttria-stabilized zirconia (YSZ) substrates to investigate the mechanism of magneto-transport in a granular manganite. Different degrees of granularity is achieved by using the deposition temperature (T$_{D}$) of 700 and 800 $^{0}$C. Although no significant change in magnetic order temperature (T$_C$) and saturation magnetization is seen for these two types of films, the temperature and magnetic field dependence of their resistivity ($\rho$(T, H)) is strikingly dissimilar. While the $\rho$(T,H) of the 800 $^{0}$C film is comparable to that of epitaxial samples, the lower growth temperature leads to a material which undergoes insulator-to-metal transition at a temperature (T$_{P}$ $\approx$ 170 K) much lower than T$_C$. At T $\ll$ T$_P$, the resistivity is characterized by a minimum followed by ln \emph{T} divergence at still lower temperatures. The high negative magnetoresistance ($\approx$ 20$$) and ln \emph{T} dependence below the minimum are explained on the basis of Kondo-type scattering from blocked Mn-spins in the intergranular material. Further, a striking feature of the T$_D$ = 700 $^{0}$C film is its two orders of magnitude larger anisotropic magnetoresistance (AMR) as compared to the AMR of epitaxial films. We attribute it to unquenching of the orbital angular momentum of 3d electrons of Mn ions in the intergranular region where crystal field is poorly defined.Comment: 26 pages, 7 figure

Low-field microwave absorption in epitaxial La-Sr-Mn-O films resulting from the angle-tuned ferromagnetic resonance in the multidomain state

We studied magnetic-field induced microwave absorption in 100-200 nm thick La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films on SrTiO$_{3}$ substrate and found a low-field absorption with a very peculiar angular dependence: it appears only in the oblique field and is absent both in the parallel and in the perpendicular orientations. We demonstrate that this low-field absorption results from the ferromagnetic resonance in the multidomain state (domain-mode resonance). Its unusual angular dependence arises from the interplay between the parallel component of the magnetic field that drives the film into multidomain state and the perpendicular field component that controls the domain width through its effect on domain wall energy. The low-field microwave absorption in the multidomain state can be a tool to probe domain structure in magnetic films with in-plane magnetization.Comment: 9 pages, 9 Figure

Inter-Temporal Calculative Trust Design to Reduce Collateral Need for Business Credits

Credit rationing arising out of informational asymmetry and lack of collateral is a well-recognised economic constraint in the credit market. These constraints get magnified for small businesses. This paper attempts to capture the dimension of trustworthiness (calculative trust) by designing a multi-period, incentivised payment structure that will induce economic agents to reveal the existence of private information about any projects or true intentions of paying up the credit that is going to fund the project. The model dynamically estimates the collateral needed by taking into account the truthfulness of the borrower. The proposed design is compared with the benchmark model - credit scoring-based model. Randomized simulations are carried out for the ex ante solution for the borrower. We find that the proposed design outperforms from the perspective of lenders when the probability of default of any project is less than 80 per cent. Our simulation result also finds that building trust helps small business owner to significantly reduce the need for collateral

Thin Dry Silicon Oxide Films Grown by Thermal Oxidation

Dry thermal oxidation is performed at 900, 950, 1000, and 1050 C in fused silica tube furnace (Sandvik) for 10, 20, 50, 100 and 200 min. The results are analyzed by both of Deal-Grove model and the method of Gerlach, Maser, and Saad. In the analysis using the Deal-Grove model, the parabolic rate constants are obtained to be 2.1, 7.0, 17.5, and 42.4 nm^2/min at 900, 950, 1000, and 1050 C, respectively, and the linear rate constants are acquired to be 0.2, 0.4, 0.8, and 1.2 nm/min at 900, 950, 1000, 1050 C, respectively. Activation energies of the parabolic rate constant and the linear rate constant are obtained to be 2.67 and 1.55 eV, respectively. In the analysis using the method of Gerlach, Maser, and Saad, the activation energy of the oxide growth rate for the 5 nm thick oxide is obtained to be 2.49 eV, whereas that for the 40 nm thick oxide to be 1.93 eV. The film uniformity for 30 nm thickness shows more than 10%, while that for the thickness of more than 50 nm indicates less than 5%, suggesting that measurement on 30 nm thick film using Filmetrics F50 is not still accurate enough. Standard deviation and coefficient of variation are also examined to discuss the film uniformity

Stress in Silicon Oxide Thin Films Grown by Dry Thermal Oxidation

Dry thermal oxidation is performed at 900, 950, 1000, and 1050 C in fused silica tube furnace (Sandvik)for 10, 20, 50, 100 and 200 min. The properties of the thin-films such as refractive index and stress arestudied in this paper. Refractive indexes of the thin-films are obtained using ellipsometer and decreasesfrom 1.78 to 1.46 as the film thickness increases.Stress of the thin-films is theoretically calculated,experimentally measured and then compared.Stress is calculated theoretically using Stoney’s stressequation and Goklaney’s stress equations. Stress is measured experimentally using the profilometer. Ex-perimentally measured stress and refractive indexes are then compared to discuss the density of the thin-films