100 research outputs found

    A 13-bit, 2.2-MS/s, 55-mW multibit cascade ΣΔ modulator in CMOS 0.7-ÎŒm single-poly technology

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    This paper presents a CMOS 0.7-ÎŒm ΣΔ modulator IC that achieves 13-bit dynamic range at 2.2 MS/s with an oversampling ratio of 16. It uses fully differential switched-capacitor circuits with a clock frequency of 35.2 MHz, and has a power consumption of 55 mW. Such a low oversampling ratio has been achieved through the combined usage of fourth-order filtering and multibit quantization. To guarantee stable operation for any input signal and/or initial condition, the fourth-order shaping function has been realized using a cascade architecture with three stages; the first stage is a second-order modulator, while the others are first-order modulators - referred to as a 2-1-1mb architecture. The quantizer of the last stage is 3 bits, while the other quantizers are single bit. The modulator architecture and coefficients have been optimized for reduced sensitivity to the errors in the 3-bit quantization process. Specifically, the 3-bit digital-to-analog converter tolerates 2.8% FS nonlinearity without significant degradation of the modulator performance. This makes the use of digital calibration unnecessary, which is a key point for reduced power consumption. We show that, for a given oversampling ratio and in the presence of 0.5% mismatch, the proposed modulator obtains a larger signal-to-noise-plus-distortion ratio than previous multibit cascade architectures. On the other hand, as compared to a 2-1-1single-bit modulator previously designed for a mixed-signal asymmetrical digital subscriber line modem in the same technology, the modulator in this paper obtains one more bit resolution, enhances the operating frequency by a factor of two, and reduces the power consumption by a factor of four.ComisiĂłn Interministerial de Ciencia y TecnologĂ­a TIC97-0580European Commission ESPRIT 879

    Nonlinear switched-current CMOS IC for random signal generation

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    A nonlinear switched-current circuit is presented that implements a chaotic algorithm for the generation of broadband, white analogue noise. The circuit has been fabricated in a double-metal, single-poly 1.6”m CMOS technology and uses a novel, highly accurate CMOS circuit strategy to realise piecewise-linear characteristics in the current-mode domain. Measurements from the silicon prototype show a flat spectrum from DC to ~30% of the clock frequency, for a clock frequency of 500kHz

    A low-power reconfigurable ADC for biomedical sensor interfaces

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    This paper presents a 12-bit low-voltage low-power reconfigurable Analog-to-Digital Converter (ADC). The design employs Switched Capacitor (SC) techniques and implements a Successive Approximation (SA) algorithm. The ADC can be tuned to handle a large variety of biopotential signals, with digitally selectable resolution and input signal amplitude. It achieves 10.4-bit of effective resolution sampling at 56kS/s, with a power consumption below 3ÎŒW from a 1V voltage supply.Ministerio de EducaciĂłn y Ciencia TEC2006-03022Junta de AndalucĂ­a TIC-0281

    A Tool for automated design of sigma-delta modulators using statistical optimization

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    A tool is presented which starting from high level specifications of SC σΎ modulators (resolution, bandwidth and oversampling ratio) calculates first optimum specifications for the building blocks (op-amps, comparator, etc.), and then, optimum sizes for their schematics. At both design levels (high-level synthesis and cell dimensioning), optimization is performed via using statistical techniques and innovative heuristics, which allow global design (independent on the initial conditions) and increased computer efficiency as compared to conventional statistical optimization techniques. The tool has been conceived to be flexible at the high-level part(via the use of an architecture independent, behaviourable modeling approach) and completely open at the cell-design part. Performance of the tool is demonstrated via the automatic design of a 16bit-dynamic range, 8Khz second-order SC σΎ modulator in 1.2 ÎŒm CMOS technology, for which measurements on a fabricated prototype are reported

    Modeling OpAmp-induced harmonic distortion for switched-capacitor ΣΔ modulator design

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    This communication reports a new modeling of opamp-induced harmonic distortion in SC ΣΔ modulators, which is aimed to optimum design of this kind of circuit for high-performance applications. We analyze incomplete transfer of charge in a SC integrator and use power expansion and nonlinear fitting to obtain analytical models to represent harmonic distortion as function of the opamp finite gain-bandwidth (GB), slew-rate (SR) and nonlinear DC gain. Calculated models apply for all modulator architectures where harmonic distortion is dominated by the first integrator in the chain. We show that results provided by the new analytical models fit well to that obtained by simulation in time domain and have accuracy levels much larger than that provided by previously reported modeling approaches

    A 74dB Dynamic Range, 1.1-MHz Signal Band 4th-Order 2-1-1 Cascade Multi-Bit CMOS ΣΔ Modulator for ADSL

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    This paper explores the use of ΣΔ techniques for A/D conversion exceeding 1-MHz signal bandwidth. A cascade modulator architecture is proposed which combines single-bit and multi-bit quantization to obtain more than 12-b Dynamic Range (DR) with an oversampling ratio of only 16, and with neither calibration nor trimming required. Measurements from a 0.7mm CMOS prototype show 74dB DR in 1.1-MHz signal band at 35.7-MHz clock rate, with a power consumption of 55mW from a 5-V supply.This work has been supported by the European Union, under ESPRIT Project 8795-AMFIS.Peer reviewe

    Multi-bit cascade ΣΔ modulator for high-speed A/D conversion with reduced sensitivity to DAC errors

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    This paper presents a ΣΔ modulator (ΣΔM) which combines single-bit and multi-bit quantization in a cascade architecture to obtain high resolution with low oversampling ratio. It is less sensitive to the non-linearity of the DAC than those previously reported, thus enabling the use of very simple analog circuitry with neither calibration nor trimming required.Comisión Interministerial de Ciencia y Tecnología TIC97-058

    Tools for Automated Design of ΣΔ Modulators

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    We present a set of CAD tools to design ΣΔ modulators. They use statistical optimization to calculate optimum specifications for the building blocks used in the modulators, and optimum sizes for the components in these blocks. Optimization procedures at the modulator level are equation-based, while procedures at the cell level are simulation-based. The toolset incorporates also an advanced ΣΔ behavioral simulator for monitoring and design space exploration. We include measurements taken from two silicon prototypes: 1) a 17bit@40kHz output rate fourth-order low-pass modulator; and 2) a [email protected] central freq@10kHz bandwidth band-pass modulator. The first uses SC fully-differential circuits in a 1.2ÎŒm CMOS double-metal double-poly technology. The second uses SI fully-differential circuits in a 0.8ÎŒm CMOS double-metal single-poly technology.This work has been supported by the CEE ESPRIT Program in the framework of the Project #8795 (AMFIS).Peer reviewe

    Global design of analog cells using statistical optimization techniques

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    We present a methodology for automated sizing of analog cells using statistical optimization in a simulation based approach. This methodology enables us to design complex analog cells from scratch within reasonable CPU time. Three different specification types are covered: strong constraints on the electrical performance of the cells, weak constraints on this performance, and design objectives. A mathematical cost function is proposed and a bunch of heuristics is given to increase accuracy and reduce CPU time to minimize the cost function. A technique is also presented to yield designs with reduced variability in the performance parameters, under random variations of the transistor technological parameters. Several CMOS analog cells with complexity levels up to 48 transistors are designed for illustration. Measurements from fabricated prototypes demonstrate the suitability of the proposed methodology
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