GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

International audienceWe introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed

Polychlorinated Biphenyl Sorption and Availability in Field-Contaminated Sediments†

Traditional and new relationships of polychlorinated biphenyl (PCB) distribution among the solid phases, the free aqueous phase, and biolipids are comprehensively reviewed using seven well-characterized freshwater and marine sediments polluted with PCBs. The traditional relationship relating free aqueous concentration and biolipid concentration to sediment total organic carbon, compound octanol−water partitioning coefficient, and solid-phase contaminant concentration overestimates measured free aqueous concentrations and biolipid concentrations by mean factors of 8 and 33, respectively. By contrast, relationships based on measured free aqueous phase concentrations or the PCB mass fraction desorbed from sediment provide reasonable predictions of biolipid concentrations. Solid-phase concentration-based predictions perform better when sorption to amorphous organic matter and black carbon (BC) is distinguished. Contrary to previously published relationships, BC sorption appears to be linear for free aqueous PCB-congener concentrations in the picogram to microgram per liter range

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

Partly made at end of A. David Thesis. No permanent co-author from LCFInternational audienceLimitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control. (c) 2008 American Institute of Physics