Comment On >Assessment Of Field-Induced Quantum Confinement In Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor> Appl. Phys. Lett. 105, 082108 (2014)

Not AvailableNRI SWAN programNSF NASCENT ERCMicroelectronics Research CenterElectrical and Computer Engineerin

Epitaxial germanium via Ge:C and its use in non-classical semiconductor devices

The microelectronics industry has been using Silicon (Si) as the primary material for complementary metal-oxide-semiconductor (CMOS) chip fabrication for more than six decades. Throughout this time, these CMOS devices have gotten exponentially smaller, faster, and cheaper. While new materials and fabrication processes have been slowly added over the years, the CMOS device of today is largely the same as it was decades ago. However, field-effect transistors (FETs) have now scaled so far that Si is approaching physical limits. Thus, new channel materials and new fundamental device structures are being investigated to replace traditional CMOS. Germanium is one of the prime candidates to replace Si in the FET channel, with its increased electron and hole mobilities compared to Si. Perhaps more importantly, it is compatible with the existing Si manufacturing techniques by epitaxially growing thin layers of Ge crystal on the starting Si wafer. Because these two crystals do not share a lattice constant, there will inevitably be crystal defects in the thin Ge layer that can be catastrophic for device functionality. Several approaches have been introduced to reduce defects, but most of them are wastefully thick (>1 um) or require complex manufacturing methods. In this work, we utilize an extremely thin (~10 nm) buffer layer of carbon-doped Ge (Ge:C) to grow Ge and SiGe layers for FET and virtual substrate applications with improved crystalline quality and reduced surface roughnesses. These thin Ge layers not only offer new pathways for MOSFETs, but can also be used in non-classical structures. Semiconductor nanowires (NWs) and tunnel-FETs (TFETs) are two of the most promising device architectures, and both can be used with Ge. This dissertation presents a simulated Si/Ge heterostructure interface TFET that can be fabricated on a virtual substrate made with the Ge:C buffer layer. Detailed analysis on device operation is given. Also in this work is the fabrication process for individually addressable Ge NW-FETs. The NWs offer excellent electrostatic gate control through reduced dimensions and offer another potential pathway for Ge in a post-CMOS world.Electrical and Computer Engineerin

Genome-Wide Analysis Reveals a Complex Pattern of Genomic Imprinting in Mice

Parent-of-origin–dependent gene expression resulting from genomic imprinting plays an important role in modulating complex traits ranging from developmental processes to cognitive abilities and associated disorders. However, while gene-targeting techniques have allowed for the identification of imprinted loci, very little is known about the contribution of imprinting to quantitative variation in complex traits. Most studies, furthermore, assume a simple pattern of imprinting, resulting in either paternal or maternal gene expression; yet, more complex patterns of effects also exist. As a result, the distribution and number of different imprinting patterns across the genome remain largely unexplored. We address these unresolved issues using a genome-wide scan for imprinted quantitative trait loci (iQTL) affecting body weight and growth in mice using a novel three-generation design. We identified ten iQTL that display much more complex and diverse effect patterns than previously assumed, including four loci with effects similar to the callipyge mutation found in sheep. Three loci display a new phenotypic pattern that we refer to as bipolar dominance, where the two heterozygotes are different from each other while the two homozygotes are identical to each other. Our study furthermore detected a paternally expressed iQTL on Chromosome 7 in a region containing a known imprinting cluster with many paternally expressed genes. Surprisingly, the effects of the iQTL were mostly restricted to traits expressed after weaning. Our results imply that the quantitative effects of an imprinted allele at a locus depend both on its parent of origin and the allele it is paired with. Our findings also show that the imprinting pattern of a locus can be variable over ontogenetic time and, in contrast to current views, may often be stronger at later stages in life

Genomic imprinting and parent-of-origin effects on complex traits

Parent-of-origin effects occur when the phenotypic effect of an allele depends on whether it is inherited from an individual’s mother or father. Several phenomena can cause parent-of-origin effects, with the best characterized being parent-of-origin dependent gene expression associated with genomic imprinting. Imprinting plays a critical role in a diversity of biological processes and in certain contexts it structures epigenetic relationships between DNA sequence and phenotypic variation. The development of new mapping approaches applied to the growing abundance of genomic data has demonstrated that imprinted genes can be important contributors to complex trait variation. Therefore, to understand the genetic architecture and evolution of complex traits, including complex diseases and traits of agricultural importance, it is crucial to account for these parent-of-origin effects. Here we discuss patterns of phenotypic variation associated with imprinting, evidence supporting its role in complex trait variation, and approaches for identifying its molecular signatures

Genetic, epigenetic, and gene-by-diet interaction effects underlie variation in serum lipids in a LG/J×SM/J murine model[S]

Variation in serum cholesterol, free-fatty acids, and triglycerides is associated with cardiovascular disease (CVD) risk factors. There is great interest in characterizing the underlying genetic architecture of these risk factors, because they vary greatly within and among human populations and between the sexes. We present results of a genome-wide scan for quantitative trait loci (QTL) affecting serum cholesterol, free-fatty acids, and triglycerides in an F16 advanced intercross line of LG/J and SM/J (Wustl:LG,SM-G16). Half of the population was fed a high-fat diet and half was fed a relatively low-fat diet. Context-dependent genetic (additive and dominance) and epigenetic (imprinting) effects were characterized by partitioning animals into sex, diet, and sex-by-diet cohorts. Here we examine genetic, environmental, and genetic-by-environmental interactions of QTL overlapping previously identified loci associated with CVD risk factors, and we add to the serum lipid QTL landscape by identifying new loci