Statistics on parallelogram polyominoes and a q,t-analogue of the Narayana numbers

We study the statistics area, bounce and dinv on the set of parallelogram polyominoes having a rectangular m times n bounding box. We show that the bi-statistics (area, bounce) and (area, dinv) give rise to the same q,t-analogue of Narayana numbers which was introduced by two of the authors in [arXiv:1208.0024]. We prove the main conjectures of that paper: the q,t-Narayana polynomials are symmetric in both q and t, and m and n. This is accomplished by providing a symmetric functions interpretation of the q,t-Narayana polynomials which relates them to the famous diagonal harmonics

Composition of Near-Earth Asteroid 2008 EV5: Potential target for Robotic and Human Exploration

We observed potentially hazardous asteroid (PHA) 2008 EV5 in the visible (0.30-0.92 microns) and near-IR (0.75-2.5 microns) wavelengths to determine its surface composition. This asteroid is especially interesting because it is a potential target for two sample return mission proposals (Marco Polo-R and Hayabusa-2) and human exploration due to its low delta-v for rendezvous. The spectrum of 2008 EV5 is essentially featureless with exception of a weak 0.48-microns spin-forbidden Fe3+ absorption band. The spectrum also has an overall blue slope. The albedo of 2008 EV5 remains uncertain with a lower limit at 0.05 and a higher end at 0.20 based on thermal modeling. The Busch et al. (2011) albedo estimate of 0.12 is consistent with our thermal modeling results. The albedo and composition of 2008 EV5 are also consistent with a C-type taxonomic classification (Somers et al. 2008). The best spectral match is with CI carbonaceous chondrites similar to Orgueil, which also have a weak 0.48-microns feature and an overall blue slope. This 0.48-microns feature is also seen in the spectrum of magnetite. The albedo of CI chondrites is at the lower limit of our estimated range for the albedo of 2008 EV5.Comment: Pages: 19 Figures: 6 Tables:

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material.Comment: 7 pages, 6 figures, submitted to PR

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.Comment: 11 pages, 7 figure

Social drivers forewarn of marine regime shifts

Some ecosystems can undergo regime shifts to alternative compositions of species. Although ecological indicators can identify approaching regime shifts, we propose that rapid changes in the social drivers underlying ecosystem change may provide additional and potentially earlier indicators of impending shifts. We demonstrate this by reconstructing the underlying social drivers of four iconic marine regime shifts: Pacific kelp forests, Northwest Atlantic continental shelf, Jamaican coral reefs, and the Chesapeake Bay estuary. In all cases, a range of social drivers – including opening of lucrative markets, technological innovations, and policies that enhanced the driver – ultimately prompted these ecosystem shifts. Drawing on examples emerging from environmental management practice, we present three practical recommendations for using social drivers as early indicators: monitor social change, determine social trigger points, and identify policy responses. We argue that accounting for the underlying social drivers of ecosystem change could improve decision making

Silicon intercalation into the graphene-SiC interface

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.Comment: 6 pages, 8 figures, submitted to PR

First direct observation of a nearly ideal graphene band structure

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.Comment: 5 pages, 4 figure