Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

This paper proposes and validates a new principle in coplanar waveguide (CPW) bandstop filter tuning by shortcutting defected ground plane (DGS) inductor shaped spirals to modify the resonant frequency. The tunable filter is fabricated on a high-resistivity silicon substrate based on a CMOS compatible technology using a 1 μm x 10 μm long and 300 nm thick vanadium oxide (VO2) switch by exploiting its insulator to metal transition. The filter is designed to work in Ka band with tunable central frequencies ranging from 28.2 GHz to 35 GHz. The measured results show a tuning range of more than 19 %, a low insertion loss in the neighboring frequency bands (below 2 dB at 20 GHz and 40 GHz in on/off-states) while a maximum rejection level close to 18 dB in off-state, limited by the no RF-ideal CMOS compatible substrate. The filter has a footprint of only 0.084 · λ0 x 0.037 · λ0 (where λ0 represents the free space wavelength at the highest resonance frequency) thus making it the most compact configuration using CPW DGS structures for the Ka frequency band. In addition, a more compact filter concept based on the Peano space filling curve is introduced to increase the tuning range while minimizing the DGS area

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface determines a tunable diode-like characteristic with a rectification ratio larger than 103. Moreover, the heterojunction can be turned into a Schottky rectifier with higher on-current by triggering the VO2 insulator to metal transition (IMT), by either applying a sufficiently large voltage or increasing the temperature above 68 °C. The proposed devices are photosensitive with linear photoresponse and temperature tunable photoresponsivity values larger than 1 in the 500/650 nm wavelength range. We finally report the first ever field-effect transistor based on gated MoS2/VO2 heterojunctions, which is a true low power FET exploiting a phase change material where the electrostatic doping effect of the gate on the junction results in a subthreshold slope (SS) of 130 mV/dec at room temperature, ION/IOFF > 103 and IoFF <; 5 pA/μm at Vd = 1.5V

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS2) on a phase transition material, vanadium dioxide (VO2). The vdW MoS2/VO2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO2. We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

This paper presents the design, fabrication, and electrical characterization of a reconfigurable RF capacitive shunt switch that exploits the electro-thermally triggered vanadium dioxide (VO2) insulator to metal phase transition. The RF switch is further exploited to build wide-band RF true-time delay tunable phase shifters. By triggering the VO2 switch insulator to metal transition (IMT), the total capacitance can be reconfigured from the series of two metal-insulator-metal (MIM) capacitors to a single MIM capacitor. The effect of bias voltage on losses and phase shift is investigated, explained, and compared to the state of the art in the field. We report thermal actuation of the devices by heating the devices above VO2 IMT temperature. By cascading multiple stages a maximum of 40° per dB loss close to 7 GHz were obtained

Study of Z boson production in pPb collisions at √sNN = 5.02 TeV

© 2016 The Author.The production of Z bosons in pPb collisions at sNN=5.02 TeV is studied by the CMS experiment via the electron and muon decay channels. The inclusive cross section is compared to pp collision predictions, and found to scale with the number of elementary nucleon-nucleon collisions. The differential cross sections as a function of the Z boson rapidity and transverse momentum are measured. Though they are found to be consistent within uncertainty with theoretical predictions both with and without nuclear effects, the forward-backward asymmetry suggests the presence of nuclear effects at large rapidities. These results provide new data for constraining nuclear parton distribution functions

Human Hsp70 Disaggregase reverses Parkinson’s-linked α-Synuclein Amyloid Fibrils

Intracellular amyloid fibrils linked to neurodegenerative disease typically accumulate in an age-related manner, suggesting inherent cellular capacity for counteracting amyloid formation in early life. Metazoan molecular chaperones assist native folding and block polymerization of amyloidogenic proteins, preempting amyloid fibril formation. Chaperone capacity for amyloid disassembly, however, is unclear. Here, we show that a specific combination of human Hsp70 disaggregase-associated chaperone components efficiently disassembles α-synuclein amyloid fibrils characteristic of Parkinson’s disease in vitro. Specifically, the Hsc70 chaperone, the class B J-protein DNAJB1, and an Hsp110 family nucleotide exchange factor (NEF) provide ATP-dependent activity that disassembles amyloids within minutes via combined fibril fragmentation and depolymerization. This ultimately generates non-toxic α-synuclein monomers. Concerted, rapid interaction cycles of all three chaperone components with fibrils generate the power stroke required for disassembly. This identifies a powerful human Hsp70 disaggregase activity that efficiently disassembles amyloid fibrils and points to crucial yet undefined biology underlying amyloid-based diseases

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing

Measurement of the t(t)over-bar production cross section in the dilepton channel in pp collisions at √s=8 TeV

The top-antitop quark (t (t) over bar) production cross section is measured in proton-proton collisions at root s = 8 TeV with the CMS experiment at the LHC, using a data sample corresponding to an integrated luminosity of 5.3 fb(-1). The measurement is performed by analysing events with a pair of electrons or muons, or one electron and one muon, and at least two jets, one of which is identified as originating from hadronisation of a bottom quark. The measured cross section is 239 +/- 2 (stat.) +/- 11 (syst.) +/- 6 (lum.) pb, for an assumed top-quark mass of 172.5 GeV, in agreement with the prediction of the standard model