Effect of tungsten doping on the properties of In2O3 films.

Highly crystalline tungsten oxide (WO3)-doped indium oxide (In2O3) films are synthesized at room temperature by the RF magnetron sputtering technique. The structural and morphological properties of the as-deposited films and the films annealed at a temperature of 300°C are investigated in detail. X-ray diffraction analysis reveals the presence of a cubic bixbyite structure with preferred orientation along the (222) plane for both the as-deposited and annealed films. Moderate WO3 doping (1 wt.%) enhances the crystallinity of the as-deposited In2O3 films, whereas the crystallinity of the films systematically decreases with an increase in WO3 doping concentration beyond 1 wt.%. Raman spectral analysis discloses the modes of the cubic bixbyite In2O3 phase in the films. Atomic force microscopy micrographs show a smooth and dense distribution of smaller grains in the films. X-ray photoelectron spectroscopy reveals the existence of W5+ in the doped films. The undoped film is highly oxygen deficient. Variation in the concentration of oxygen vacancy can be associated with the degree of crystallinity of the films

Highly ordered good crystalline ZnO-doped WO3 thin films suitable for optoelectronic applications.

Highly ordered ZnO-doped WO3 thin films with good crystalline quality are prepared using radio frequency magnetron sputtering technique, and its morphological and structural properties are studied using various characterization tools such as field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction technique, micro-Raman spectroscopy, and x-ray photoelectron spectroscopy. Morphological analysis shows a smooth surface for pure film, whereas the ZnO-doped films presents a dense distribution of grains of larger sizes with well-defined grain boundary. X-ray diffraction studies reveal the enhancement of crystalline quality of the films with increase in ZnO doping concentration up to 5 wt.%, beyond which the crystalline quality gets deteriorated. A phase modification from a single monoclinic WO3 phase to mixed monoclinic WO3 and W18O49 phases is observed for films with higher ZnO doping concentrations

Study on the structural, morphological and optical properties of RF-sputtered dysprosium-doped barium tungstate thin films.

Barium tungstate films with different Dy3+ doping concentrations, namely 0 wt.%, 1 wt.%, 3 wt.% and 5 wt.%, are deposited on cleaned quartz substrate by radio frequency magnetron sputtering technique and the prepared films are annealed at a temperature of 700{deg}C. The structural, morphological and optical properties of the annealed films are studied using techniques such as x-ray diffraction (XRD), micro-Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and photoluminescence spectroscopy. XRD analysis shows that all the films are well-crystallized in nature with a monoclinic barium tungstate phase. The presence of characteristic modes of the tungstate group in the Raman spectra supports the formation of the barium tungstate phase in the films. Scanning electron microscopic images of the films present a uniform dense distribution of well-defined grains with different sizes. All the doped films present a broad emission in the 390-500 nm region and its intensity increases up to 3 wt.% and thereafter decreases due to usual concentration quenching