New bounds for circulant Johnson-Lindenstrauss embeddings

This paper analyzes circulant Johnson-Lindenstrauss (JL) embeddings which, as an important class of structured random JL embeddings, are formed by randomizing the column signs of a circulant matrix generated by a random vector. With the help of recent decoupling techniques and matrix-valued Bernstein inequalities, we obtain a new bound $k=O(\epsilon^{-2}\log^{(1+\delta)} (n))$ for Gaussian circulant JL embeddings. Moreover, by using the Laplace transform technique (also called Bernstein's trick), we extend the result to subgaussian case. The bounds in this paper offer a small improvement over the current best bounds for Gaussian circulant JL embeddings for certain parameter regimes and are derived using more direct methods.Comment: 11 pages; accepted by Communications in Mathematical Science

Junction-Less Monolayer MoS2 FETs

This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International Technology Roadmap for Semiconductors (ITRS), by employing rigorous quantum transport simulations. By comparing with MoS2 based conventional FETs, it is found that the JL structure naturally lends MoS2 FETs with superior device electrostatics, and higher ON-current for both high-performance and low-standby-power applications, especially at high impurity doping densities. Along with the advantages of the MoS2 JL-FETs, the effects of impurity scattering induced carrier mobility degradation of JL-FETs is also highlighted as a key technological issue to be addressed for exploiting their unique features

Antimicrobials: a global alliance for optimizing their rational use in intra-abdominal infections (AGORA)

Intra-abdominal infections (IAI) are an important cause of morbidity and are frequently associated with poor prognosis, particularly in high-risk patients. The cornerstones in the management of complicated IAIs are timely effective source control with appropriate antimicrobial therapy. Empiric antimicrobial therapy is important in the management of intra-abdominal infections and must be broad enough to cover all likely organisms because inappropriate initial antimicrobial therapy is associated with poor patient outcomes and the development of bacterial resistance. The overuse of antimicrobials is widely accepted as a major driver of some emerging infections (such as C. difficile), the selection of resistant pathogens in individual patients, and for the continued development of antimicrobial resistance globally. The growing emergence of multi-drug resistant organisms and the limited development of new agents available to counteract them have caused an impending crisis with alarming implications, especially with regards to Gram-negative bacteria. An international task force from 79 different countries has joined this project by sharing a document on the rational use of antimicrobials for patients with IAIs. The project has been termed AGORA (Antimicrobials: A Global Alliance for Optimizing their Rational Use in Intra-Abdominal Infections). The authors hope that AGORA, involving many of the world's leading experts, can actively raise awareness in health workers and can improve prescribing behavior in treating IAIs

Talitha cum

Mark 5:21-43. Sermon preached Jl 2 2006

For surely I know the plans I have for you

Jer 29:1-14. Preached at Waterloo, Ont, Jl 4 2001

Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors

This paper presents experimental and simulation analysis of an Ω-shaped silicon junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and diameter of the Si channel of 8 nm. Our experimental measurements reveal that the ON-currents up to 1.15 mA/μm for 1.0 V and 2.52 mA/μm for the 1.8-V gate overdrive with an OFF-current set at 100 nA/μm. Also, the experiment data reveal more than eight orders of magnitude ON-current to OFF-current ratios and an excellent subthreshold slope of 66 mV/dec recorded at room temperature. The obtained experimental current-voltage characteristics are used as a reference point to calibrate the simulations models used in this paper. Our simulation data show good agreement with the experimental results. All simulations are based on drift-diffusion formalism with activated density gradient quantum corrections. Once the simulations methodology is established, the simulations are calibrated to the experimental data. After this, we have performed statistical numerical experiments of a set of 500 different JL-NWTs. Each device has a unique random distribution of the discrete dopants within the silicon body. From those statistical simulations, we extracted important figures of merit, such as OFF-current and ON-current, subthreshold slope, and voltage threshold. The performed statistical analysis, on samples of those 500 JL-NWTs, shows that the mean ID-VGs characteristic is in excellent agreement with the experimental measurements. Moreover, the mean ID-VGs characteristic reproduces better the subthreshold slope data obtained from the experiment in comparison to the continuous model simulation. Finally, performance predictions for the JL transistor with shorter gate lengths and thinner oxide regions are carried out. Among the simulated JL transistors, the configuration with 25-nm gate length and 2-nm oxide thickness shows the most promising characteristics offering scalable designs

One in mission - a compassionate church

Historical series, 1. Delivered at the 1st biennial convention, Evangelical Lutheran Church in Canada, Ottawa, Jl 8 1987