196 research outputs found
Nonlinear electron transport in normally pinched-off quantum wire
Nonlinear electron transport in normally pinched-off quantum wires was
studied. The wires were fabricated from AlGaAs/GaAs heterostructures with
high-mobility two-dimensional electron gas by electron beam lithography and
following wet etching. At certain critical source-drain voltage the samples
exhibited a step rise of the conductance. The differential conductance of the
open wires was noticeably lower than e^2/h as far as only part of the
source-drain voltage dropped between source contact and saddle-point of the
potential relief along the wire. The latter limited the electron flow injected
to the wire. At high enough source-drain voltages the decrease of the
differential conductance due to the real space transfer of electrons from the
wire in GaAs to the doped AlGaAs layer was found. In this regime the sign of
differential magnetoconductance was changed with reversing the direction of the
current in the wire or the magnetic field, whet the magnetic field lies in the
heterostructure plane and is directed perpendicular to the current. The
dependence of the differential conductance on the magnetic field and its
direction indicated that the real space transfer events were mainly mediated by
the interface scattering.Comment: LaTeX 2e (epl.cls) 6 pages, 3 figure
GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by
molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs
phase separation. Their density is proportional to the density of catalyzing
MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate
temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the
nanowires combine one-dimensional properties with the magnetic properties of
(Ga,Mn)As and provide natural, self assembled structures for nanospintronics.Comment: 13 pages, 6 figure
GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. Here, we demonstrate how GaAs nanoscale membranes can be seamlessly integrated on silicon by controlling the density of nuclei in the initial stages of growth. We also correlate the absence or presence of defects with the existence of a single or multiple nucleation regime for the single membranes. Certain defects exhibit well-differentiated spectroscopic features that we identify with cathodoluminescence and micro-photoluminescence techniques. Overall, this work presents a new approach for the seamless integration of compound semiconductors on silicon
Parametric localized modes in quadratic nonlinear photonic structures
We analyze two-color spatially localized modes formed by parametrically
coupled fundamental and second-harmonic fields excited at quadratic (or chi-2)
nonlinear interfaces embedded into a linear layered structure --- a
quasi-one-dimensional quadratic nonlinear photonic crystal. For a periodic
lattice of nonlinear interfaces, we derive an effective discrete model for the
amplitudes of the fundamental and second-harmonic waves at the interfaces (the
so-called discrete chi-2 equations), and find, numerically and analytically,
the spatially localized solutions --- discrete gap solitons. For a single
nonlinear interface in a linear superlattice, we study the properties of
two-color localized modes, and describe both similarities and differences with
quadratic solitons in homogeneous media.Comment: 9 pages, 8 figure
Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
The results of experimental and theoretical studies of zero-bias anomaly
(ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6T are
presented. A specific feature of the structures is a coexistence of the 2D and
3D states at the Fermi energy near the semiconductor surface. The dependence of
the measured ZBA amplitude on the strength and orientation of the applied
magnetic field is in agreement with the proposed theoretical model. According
to this model, electrons tunnel into 2D states, and move diffusively in the 2D
layer, whereas the main contribution to the screening comes from 3D electrons.Comment: 8 double-column pages, REVTeX, 9 eps figures embedded with epsf,
published versio
Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite
The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics
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