The Protein Component of Sow Colostrum and Milk

The production of colostrum and milk by the sow are primary limiting factors affecting survival, growth and development of the piglets. The proteins of colostrum and milk provide not only a supply of amino acids to the neonate but also a wide range of bioactive factors. Proteins in sow mammary secretions include those associated with the milk fat membranes, caseins, mammary-derived whey proteins, immunoglobulins, hormones and growth factors, enzymes, and a wide range of other proteins. Concentrations of most milk-specific proteins typically are lower in colostrum than in milk, while concentrations of immunoglobulins and other bioactive proteins often are enriched in colostrum compared with mature milk. Dietary protein is utilized for milk protein production with approximately 50% efficiency. During both the colostrum period and at peak lactation as much as 700–800 g of protein is secreted daily by today’s highly prolific sows. Estimates of daily milk protein secretion during lactation suggest that sows are not able to consume sufficient dietary protein and energy to account for output of solids in milk and therefore must mobilize body protein and body fat to support their milk production. Milk protein content typically is not affected by dietary treatment, indicating that the sow mobilizes her body reserves to maintain milk production and milk protein production. These observations are of particular interest for today’s highly prolific sows, which may require more dietary protein than previous genotypes

Multi-technique characterisation of MOVPE-grown GaAs on Si

The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high speed and low power logic applications. That said this integration generates immense scientific and technological challenges. In this work multi-technique characterisation is used to investigate properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Si substrates - (100) with 4⁰ offset towards - under various growth conditions. This being a crucial first step towards the production of III-V template layers with a relatively lower density of defects for selective epitaxial overgrowth of device quality material. The optical and structural properties of heteroepitaxial GaAs are first investigated by micro-Raman spectroscopy and photoluminescence and reflectance measurements. High-resolution X-ray diffraction (HR-XRD) is used to investigate structural properties. Advanced XRD techniques, including double-axis diffraction and X-ray crystallographic mapping are used to evaluate degrees of relaxation and distribution of the grain orientations in the epilayers, respectively. Results obtained from the different methodologies are compared in an attempt to understand growth kinetics of the materials system. The GaAs overlayer grown with annealing at 735⁰C following As predeposition at 500⁰C shows the best crystallinity. Close inspection confirms the growth of epitaxial GaAs preferentially oriented along (100) embedded in a highly-textured polycrystalline structure

Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack

The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxidesemiconductor (MOS) structure, namely Pd/Al2O3/ In0.53Ga0.47As/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3504

Fungal Planet description sheets: 1436–1477

Novel species of fungi described in this study include those from various countries as follows: Argentina, Colletotrichum araujiae on leaves, stems and fruits of Araujia hortorum. Australia, Agaricus pateritonsus on soil, Curvularia fraserae on dying leaf of Bothriochloa insculpta, Curvularia millisiae from yellowing leaf tips of Cyperus aromaticus, Marasmius brunneolorobustus on well-rotted wood, Nigrospora cooperae from necrotic leaf of Heteropogon contortus, Penicillium tealii from the body of a dead spider, Pseudocercospora robertsiorum from leaf spots of Senna tora, Talaromyces atkinsoniae from gills of Marasmius crinis-equi and Zasmidium pearceae from leaf spots of Smilax glyciphylla. Brazil, Preussia bezerrensis from air. Chile, Paraconiothyrium kelleni from the rhizosphere of Fragaria chiloensis subsp. chiloensis f. chiloensis. Finland, Inocybe udicola on soil in mixed forest with Betula pendula, Populus tremula, Picea abies and Alnus incana. France, Myrmecridium normannianum on dead culm of unidentified Poaceae. Germany, Vexillomyces fraxinicola from symptomless stem wood of Fraxinus excelsior. India, Diaporthe limoniae on infected fruit of Limonia acidissima, Didymella naikii on leaves of Cajanus cajan, and Fulvifomes mangroviensis on basal trunk of Aegiceras corniculatum. Indonesia, Penicillium ezekielii from Zea mays kernels. Namibia, Neocamarosporium calicoremae and Neocladosporium calicoremae on stems of Calicorema capitata, and Pleiochaeta adenolobi on symptomatic leaves of Adenolobus pechuelii. Netherlands, Chalara pteridii on stems of Pteridium aquilinum, Neomackenziella juncicola (incl. Neomackenziella gen. nov.) and Sporidesmiella junci from dead culms of Juncus effusus. Pakistan, Inocybe longistipitata on soil in a Quercus forest. Poland, Phytophthora viadrina from rhizosphere soil of Quercus robur, and Septoria krystynae on leaf spots of Viscum album. Portugal (Azores), Acrogenospora stellata on dead wood or bark. South Africa, Phyllactinia greyiae on leaves of Greyia sutherlandii and Punctelia anae on bark of Vachellia karroo. Spain, Anteaglonium lusitanicum on decaying wood of Prunus lusitanica subsp. lusitanica, Hawksworthiomyces riparius from fluvial sediments, Lophiostoma carabassense endophytic in roots of Limbarda crithmoides, and Tuber mohedanoi from calcareus soils. Spain (Canary Islands), Mycena laurisilvae on stumps and woody debris. Sweden, Elaphomyces geminus from soil under Quercus robur. Thailand, Lactifluus chiangraiensis on soil under Pinus merkusii, Lactifluus nakhonphanomensis and Xerocomus sisongkhramensis on soil under Dipterocarpus trees. Ukraine, Valsonectria robiniae on dead twigs of Robinia hispida. USA, Spiralomyces americanus (incl. Spiralomyces gen. nov.) from office air. Morphological and culture characteristics are supported by DNA barcodes

SARS-CoV-2 infects the human kidney and drives fibrosis in kidney organoids

Kidney failure is frequently observed during and after COVID-19, but it remains elusive whether this is a direct effect of the virus. Here, we report that SARS-CoV-2 directly infects kidney cells and is associated with increased tubule-interstitial kidney fibrosis in patient autopsy samples. To study direct effects of the virus on the kidney independent of systemic effects of COVID-19, we infected human-induced pluripotent stem-cell-derived kidney organoids with SARS-CoV-2. Single-cell RNA sequencing indicated injury and dedifferentiation of infected cells with activation of profibrotic signaling pathways. Importantly, SARS-CoV-2 infection also led to increased collagen 1 protein expression in organoids. A SARS-CoV-2 protease inhibitor was able to ameliorate the infection of kidney cells by SARS-CoV-2. Our results suggest that SARS-CoV-2 can directly infect kidney cells and induce cell injury with subsequent fibrosis. These data could explain both acute kidney injury in COVID-19 patients and the development of chronic kidney disease in long COVID

Electrically active interface defects in the (100)Si/SiOx/HfO2/TiN system: Origin, instabilities and passivation

An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600{degree sign}C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900{degree sign}C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550{degree sign}C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900{degree sign}C, 30s N2 RTA