Nanomaterials of the topological crystalline insulators, Pb1–xSnxTe and Pb1–xSnxSe

Topological insulators (TIs) and topological crystal insulators (TCIs) exhibit exotic surface properties. We present optimised growth procedures to obtain high quality bulk crystals of the TCIs Pb1-xSnxTe and Pb1-xSnxSe, and nanowires from the bulk crystals using the vapour-liquid-solid (VLS) technique. Nanowires of Pb1-xSnxTe have been produced with a Sn composition of x = 0.25, at which a transition from trivial to non-trivial insulator is reported. The results obtained on the growth of nanomaterials of Pb1-xSnxSe are also described. Detailed characterisation of the bulk crystals and the nanomaterials through x-ray diffraction, microscopy techniques and EDX analysis are presente

Impact of sequential surface-modification of graphene oxide on ice nucleation

Base-washed graphene-oxide which has been sequentially modified by thiol-epoxy chemistry, results in materials with ice nucleation activity. The role of hydro-philic/phobic grafts and polymers was evaluated with the most potent functioning at just 0.25 wt %. These 2-D hybrid materials may find use in cryopreservation and fundamental studies on ice formation

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts

The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices

A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 μm thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOS-Cs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer

A mesh reinforced pressure-sensitive adhesive for a linerless label design

A concept for an on-demand linerless pressure sensitive adhesive (PSA) label is shown. Containment of a PSA has been achieved by entrapment within a scaffolding 3D hard mesh structure. The label sticks upon instant application of heat and pressure, which softens and deforms the mesh allowing for PSA release. The design eliminates the need for a release liner and release coating in labels offering a more sustainable product. Herein, the mesh-reinforced PSA system was made by film formation of a binary polymer latex mixture consisting of ‘hard’ (high glass transition temperature, Tg,hard) polystyrene particles and a ‘soft’ (low glass transition temperature Tg,soft) poly(n-butyl acrylate)-based PSA latex of similar particle diameter, onto a model polyethylene terephthalate (PET) facestock. The system was annealed above Tg,hard to fuse the polystyrene colloids, creating a 3D interconnected open cellular network. The porous scaffold was shown by scanning electron microscopy, X-ray computed tomography, and confocal microscopy. The linerless PSA label is in a dormant, ‘non-stick’ state at room temperature l storage conditions. Adhesion is activated on demand with heat (T > Tg,hard) and light pressure. The adhesive behavior of the linerless PSA labels was probed using peel, shear strength and tack, its performance being promising

High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs

The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. Threshold voltages almost doubled after tens of minutes of positive gate voltage stressing at 300 °C, but approached their original values again after only one or two minutes of negative gate bias stressing. Fortunately, the change in drain current due to these threshold instabilities was almost negligible. However, the threshold approaches zero volts at high temperatures after a high temperature negative gate bias stress. The zero gate bias leakage is low until the threshold voltage reduces to approximately 150 mV, where-after the leakage increases exponentially. Thermal aging tests demonstrated a sudden change from linear to nonlinear output characteristics after 24-100 h air storage at 300 °C and after 570-1000 h in N2 atmosphere. We attribute this to nickel oxide growth on the drain contact metallization which forms a heterojunction p-n diode with the SiC substrate. It was determined that these state-of-the-art SiC mosfet devices may be operated in real applications at temperatures far exceeding their rated operating temperatures

Microcracks in CVD diamond produced by scaife polishing

We investigate sub-surface damage in a CVD diamond, polished on a (110) plane using the traditional scaife method. The damage lies in tracks that consist of microcracks lying perpendicular to the polishing direction. These cracks have an irregular spacing and are comprised mainly of {111} facets. Their geometry is consistent with a modified Hertzian fracture, caused by a stick-slip movement of relatively large (micron-sized) diamond particles on the scaife. The interior surface of the cracks shows a 1x1 CH3 surface reconstruction, consistent with a high hydrogen overpressure that results from ingress of hydrocarbons in the polishing lubricant and a relatively low temperature process. The crack edge is ragged, and voids with sizes of a few nm are found up to hundreds of nm from the crack front, particularly where the crack ends at the polished surface. We propose that these features are evidence of significant healing of the cracks once the applied stress is removed. Luminescence at the crack tips is seen, presumably due to impurities trapped in these voids, which quenches with electron irradiation at 10 keV

Poly(vinyl alcohol) molecular bottlebrushes nucleate ice

Ice binding proteins (IBP) have evolved to limit the growth of ice but also to promote ice formation by ice-nucleating proteins (INPs). IBPs, which modulate these seemingly distinct processes, often have high sequence similarities, and molecular size/assembly is hypothesized to be a crucial determinant. There are only a few synthetic materials that reproduce INP function, and rational design of ice nucleators has not been achieved due to outstanding questions about the mechanisms of ice binding. Poly(vinyl alcohol) (PVA) is a water-soluble synthetic polymer well known to effectively block ice recrystallization, by binding to ice. Here, we report the synthesis of a polymeric ice nucleator, which mimics the dense assembly of IBPs, using confined ice-binding polymers in a high-molar-mass molecular bottlebrush. Poly(vinyl alcohol)-based molecular bottlebrushes with different side-chain densities were synthesized via a combination of ring-opening metathesis polymerization (ROMP) and reversible addition–fragmentation chain-transfer (RAFT) polymerization, using “grafting-to” and “grafting-through” approaches. The facile preparation of the PVA bottlebrushes was performed via selective hydrolysis of the acetate of the poly(vinyl acetate) (PVAc) side chains of the PVAc bottlebrush precursors. Ice-binding polymer side-chain density was shown to be crucial for nucleation activity, with less dense brushes resulting in colder nucleation than denser brushes. This bio-inspired approach provides a synthetic framework for probing heterogeneous ice nucleation and a route toward defined synthetic nucleators for biotechnological applications

Subjective and Objective Measures of Dryness Symptoms in Primary Sjögren's Syndrome::Capturing the Discrepancy

Objective: To develop a novel method for capturing the discrepancy between objective tests and subjective dryness symptoms (a sensitivity scale) and to explore predictors of dryness sensitivity. Methods: Archive data from the UK Primary Sjögren's Syndrome Registry (n = 688) were used. Patients were classified on a scale from −5 (stoical) to +5 (sensitive) depending on the degree of discrepancy between their objective and subjective symptoms classes. Sensitivity scores were correlated with demographic variables, disease-related factors, and symptoms of pain, fatigue, anxiety, and depression. Results: Patients were on average relatively stoical for both types of dryness symptoms (mean ± SD ocular dryness −0.42 ± 2.2 and −1.24 ± 1.6 oral dryness). Twenty-seven percent of patients were classified as sensitive to ocular dryness and 9% to oral dryness. Hierarchical regression analyses identified the strongest predictor of ocular dryness sensitivity to be self-reported pain and that of oral dryness sensitivity to be self-reported fatigue. Conclusion: Ocular and oral dryness sensitivity can be classified on a continuous scale. The 2 symptom types are predicted by different variables. A large number of factors remain to be explored that may impact symptom sensitivity in primary Sjögrenʼs syndrome, and the proposed method could be used to identify relatively sensitive and stoical patients for future studies.</p

Multiple novel prostate cancer susceptibility signals identified by fine-mapping of known risk loci among Europeans

Genome-wide association studies (GWAS) have identified numerous common prostate cancer (PrCa) susceptibility loci. We have fine-mapped 64 GWAS regions known at the conclusion of the iCOGS study using large-scale genotyping and imputation in 25 723 PrCa cases and 26 274 controls of European ancestry. We detected evidence for multiple independent signals at 16 regions, 12 of which contained additional newly identified significant associations. A single signal comprising a spectrum of correlated variation was observed at 39 regions; 35 of which are now described by a novel more significantly associated lead SNP, while the originally reported variant remained as the lead SNP only in 4 regions. We also confirmed two association signals in Europeans that had been previously reported only in East-Asian GWAS. Based on statistical evidence and linkage disequilibrium (LD) structure, we have curated and narrowed down the list of the most likely candidate causal variants for each region. Functional annotation using data from ENCODE filtered for PrCa cell lines and eQTL analysis demonstrated significant enrichment for overlap with bio-features within this set. By incorporating the novel risk variants identified here alongside the refined data for existing association signals, we estimate that these loci now explain ∼38.9% of the familial relative risk of PrCa, an 8.9% improvement over the previously reported GWAS tag SNPs. This suggests that a significant fraction of the heritability of PrCa may have been hidden during the discovery phase of GWAS, in particular due to the presence of multiple independent signals within the same regio