1,631 research outputs found
The Raman Fingerprint of Graphene
Graphene is the two-dimensional (2d) building block for carbon allotropes of
every other dimensionality. It can be stacked into 3d graphite, rolled into 1d
nanotubes, or wrapped into 0d fullerenes. Its recent discovery in free state
has finally provided the possibility to study experimentally its electronic and
phonon properties. Here we show that graphene's electronic structure is
uniquely captured in its Raman spectrum that clearly evolves with increasing
number of layers. Raman fingerprints for single-, bi- and few-layer graphene
reflect changes in the electronic structure and electron-phonon interactions
and allow unambiguous, high-throughput, non-destructive identification of
graphene layers, which is critically lacking in this emerging research area
Graphene-based photovoltaic cells for near-field thermal energy conversion
Thermophotovoltaic devices are energy-conversion systems generating an
electric current from the thermal photons radiated by a hot body. In far field,
the efficiency of these systems is limited by the thermodynamic
Schockley-Queisser limit corresponding to the case where the source is a black
body. On the other hand, in near field, the heat flux which can be transferred
to a photovoltaic cell can be several orders of magnitude larger because of the
contribution of evanescent photons. This is particularly true when the source
supports surface polaritons. Unfortunately, in the infrared where these systems
operate, the mismatch between the surface-mode frequency and the semiconductor
gap reduces drastically the potential of this technology. Here we show that
graphene-based hybrid photovoltaic cells can significantly enhance the
generated power paving the way to a promising technology for an intensive
production of electricity from waste heat.Comment: 5 pages, 4 figure
Strong plasmonic enhancement of photovoltage in graphene.
From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s(-1). However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries
Single donor ionization energies in a nanoscale CMOS channel
One consequence of the continued downwards scaling of transistors is the
reliance on only a few discrete atoms to dope the channel, and random
fluctuations of the number of these dopants is already a major issue in the
microelectonics industry. While single-dopant signatures have been observed at
low temperature, studying the impact of only one dopant up to room temperature
requires extremely small lengths. Here, we show that a single arsenic dopant
dramatically affects the off-state behavior of an advanced microelectronics
field effect transistor (FET) at room temperature. Furthermore, the ionization
energy of this dopant should be profoundly modified by the close proximity of
materials with a different dielectric constant than the host semiconductor. We
measure a strong enhancement, from 54meV to 108meV, of the ionization energy of
an arsenic atom located near the buried oxide. This enhancement is responsible
for the large current below threshold at room temperature and therefore
explains the large variability in these ultra-scaled transistors. The results
also suggest a path to incorporating quantum functionalities into silicon CMOS
devices through manipulation of single donor orbitals
Detecting topological currents in graphene superlattices
This is the author accepted manuscript. The final version is available from AAAS via the DOI in this record.Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observed this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several micrometers away from the nominal current path. Locally, topological currents are comparable in strength with the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by means of gate voltage can be exploited for information processing based on valley degrees of freedom.This work was supported by the European Research Council, the Royal Society, the National Science
Foundation (STC Center for Integrated Quantum Materials, grant DMR‐1231319), Engineering & Physical Research Council (UK), the Office of Naval Research and the Air Force Office of Scientific Research
Band dispersion in the deep 1s core level of graphene
Chemical bonding in molecules and solids arises from the overlap of valence
electron wave functions, forming extended molecular orbitals and dispersing
Bloch states, respectively. Core electrons with high binding energies, on the
other hand, are localized to their respective atoms and their wave functions do
not overlap significantly. Here we report the observation of band formation and
considerable dispersion (up to 60 meV) in the core level of the carbon
atoms forming graphene, despite the high C binding energy of 284
eV. Due to a Young's double slit-like interference effect, a situation arises
in which only the bonding or only the anti-bonding states is observed for a
given photoemission geometry.Comment: 12 pages, 3 figures, including supplementary materia
Probing the local nature of excitons and plasmons in few-layer MoS₂
Excitons and plasmons are the two most fundamental types of collective electronic excitations occurring in solids. Traditionally, they have been studied separately using bulk techniques that probe their average energetic structure over large spatial regions. However, as the dimensions of materials and devices continue to shrink, it becomes crucial to understand how these excitations depend on local variations in the crystal- and chemical structure on the atomic scale. Here, we use monochromated low-loss scanning-transmission-electron-microscopy electron-energy-loss spectroscopy, providing the best simultaneous energy and spatial resolution achieved to-date to unravel the full set of electronic excitations in few-layer MoS₂ nanosheets over a wide energy range. Using first-principles, many-body calculations we confirm the excitonic nature of the peaks at ~ 2 and ~ 3 eV in the experimental electron-energy-loss spectrum and the plasmonic nature of higher energy-loss peaks. We also rationalise the non-trivial dependence of the electron-energy-loss spectrum on beam and sample geometry such as the number of atomic layers and distance to steps and edges. Moreover, we show that the excitonic features are dominated by the long wavelength (q = 0) components of the probing field, while the plasmonic features are sensitive to a much broader range of q-vectors, indicating a qualitative difference in the spatial character of the two types of collective excitations. Our work provides a template protocol for mapping the local nature of electronic excitations that open new possibilities for studying photo-absorption and energy transfer processes on a nanometer scale
Giant half-cycle attosecond pulses
Half-cycle picosecond pulses have been produced from thin photo-conductors,
when applying an electric field across the surface and switching on conduction
by a short laser pulse. Then the transverse current in the wafer plane emits
half-cycle pulses in normal direction, and pulses of 500 fs duration and 1e6
V/m peak electric field have been observed. Here we show that single half-cycle
pulses of 50 as duration and up to 1e13 V/m can be produced when irradiating a
double foil target by intense few-cycle laser pulses. Focused onto an
ultra-thin foil, all electrons are blown out, forming a uniform sheet of
relativistic electrons. A second layer, placed at some distance behind,
reflects the drive beam, but lets electrons pass straight. Under oblique
incidence, beam reflection provides the transverse current, which emits intense
half-cycle pulses. Such a pulse may completely ionize even heavier atoms. New
types of attosecond pump-probe experiments will become possible.Comment: 5 pages, 4 figures, to be presented at LEI2011-Light at Extreme
Intensities and China-Germany Symposium on Laser Acceleratio
Electronic Properties of Boron and Nitrogen doped graphene: A first principles study
Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by
B and N is studied using density functional theory. Our extensive band
structure and density of states calculations indicate that upon doping by N
(electron doping), the Dirac point in the graphene band structure shifts below
the Fermi level and an energy gap appears at the high symmetric K-point. On the
other hand, by B (hole doping), the Dirac point shifts above the Fermi level
and a gap appears. Upon co-doping of graphene by B and N, the energy gap
between valence and conduction bands appears at Fermi level and the system
behaves as narrow gap semiconductor. Obtained results are found to be in well
agreement with available experimental findings.Comment: 11 pages, 4 figures, 1 table, submitted to J. Nanopart. Re
Preparation and characterization of in situ polymerized cyclic butylene terephthalate/graphene nanocomposites
Graphene reinforced cyclic butylene terephthalate (CBT) matrix nanocomposites were prepared and characterized by mechanical and thermal methods. These nanocomposites containing different amounts of graphene (up to 5 wt%) were prepared by melt mixing with CBT that was polymerized in situ during a subsequent hot pressing. The nanocomposites and the neat polymerized CBT (pCBT) as reference material were subjected to differential scanning calorimetry (DSC), dynamical mechanical analysis (DMA), thermogravimetrical analysis (TGA) and heat conductivity measurements. The dispersion of the grapheme nanoplatelets was characterized by transmission electron microscopy (TEM). It was established that the partly exfoliated graphene worked as nucleating agent for crystallization, acted as very efficient reinforcing agent (the storage modulus at room temperature was increased by 39 and 89% by incorporating 1 and 5 wt.% graphene, respectively). Graphene incorporation markedly enhanced the heat conductivity but did not influence the TGA behaviour due to the not proper exfoliation except the ash content
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