Not All Fabrics Are Created Equal: Exploring eFPGA Parameters for IP Redaction

Semiconductor design houses rely on third-party foundries to manufacture their integrated circuits (ICs). While this trend allows them to tackle fabrication costs, it introduces security concerns as external (and potentially malicious) parties can access critical parts of the designs and steal or modify the intellectual property (IP). Embedded field-programmable gate array (eFPGA) redaction is a promising technique to protect critical IPs of an ASIC by redacting (i.e., removing) critical parts and mapping them onto a custom reconfigurable fabric. Only trusted parties will receive the correct bitstream to restore the redacted functionality. While previous studies imply that using an eFPGA is a sufficient condition to provide security against IP threats like reverse-engineering, whether this truly holds for all eFPGA architectures is unclear, thus motivating the study in this article. We examine the security of eFPGA fabrics generated by varying different FPGA design parameters. We characterize the power, performance, and area (PPA) characteristics and evaluate each fabric’s resistance to Boolean satisfiability (SAT)-based bitstream recovery. Our results encourage designers to work with custom eFPGA fabrics rather than off-the-shelf commercial FPGAs and reveals that only considering a redaction fabric’s bitstream size is inadequate for gauging security

ALICE: An Automatic Design Flow for eFPGA Redaction

Fabricating an integrated circuit is becoming unaffordable for many semiconductor design houses. Outsourcing the fabrication to a third-party foundry requires methods to protect the intellectual property of the hardware designs. Designers can rely on embedded reconfigurable devices to completely hide the real functionality of selected design portions unless the configuration string (bitstream) is provided. However, selecting such portions and creating the corresponding reconfigurable fabrics are still open problems. We propose ALICE, a design flow that addresses the EDA challenges of this problem. ALICE partitions the RTL modules between one or more reconfigurable fabrics and the rest of the circuit, automating the generation of the corresponding redacted design

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demonstrated using chemical doping of the material [5], [6]. However, since chemical doping is often non-compatible with conventional CMOS processes and is limited by the desorption of the chemical species used [5]–[7], we explore the possibilities offered by electrostatic doping. Here, we exploit the presence of Schottky barrier contacts in WSe 2 , and using electrostatic doping we achieve dynamic control of the polarity of the transistors. We fabricate, for the first time on a 2D material, a doping-free complementary inverter, providing a path for the realization of CMOS logic with a single ambipolar, undoped 2D semiconducting material

Biodegradation of herbicide diuron by streptomycetes isolated from soil

The diuron degrading activity of 17 streptomycete strains, obtained from agricultural and non-agricultural soils, was determined in the laboratory. All strains were identified as Streptomyces sp. by phenotypic characteristics and PCR-based assays. The strains were cultivated in liquid medium with diuron (4mgL(-1)) at 25 degrees C for 15 days. Biodegradation activity was deter-mined by high-performance liquid chromatography. The results indicated that all strains were able to degrade diuron, but to different amounts. Twelve strains degraded the herbicide by up to 50% and four of them by up to 70%. Strain A7-9, belonging to S. albidoflavus cluster, was the most efficient organism in the degradation of diuron, achieving 95% degradation after five days of incubation and no herbicide remained after 10 days. Overall, the strains isolated from agricultural soils exhibited higher degradation percentages and rates than those isolated from non-agricultural soils. Given the high degradation activity observed here, the streptomycete strains show a good potential for bioremediation of soils contaminated with diuron. (c) 2006 Elsevier Ltd. All rights reserved.Castillo López, MÁ.; Felis Reig, N.; Aragón Revuelta, P.; Cuesta Amat, G.; Sabater Marco, C. (2006). Biodegradation of herbicide diuron by streptomycetes isolated from soil. International Biodeterioration and Biodegradation. 58(3-4):196-202. doi:10.1016/j.ibiod.2006.06.020S196202583-

Design and Benchmarking of Hybrid CMOS-Spin Wave Device Circuits Compared to 10nm CMOS

In this paper, we present a design and benchmarking methodology of Spin Wave Device (SWD) circuits based on micromagnetic modeling. SWD technology is compared against a 10nm FinFET CMOS technology, considering the key metrics of area, delay and power. We show that SWD circuits outperform the 10nm CMOS FinFET equivalents by a large margin. The area-delay-power product (ADPP) of SWD is smaller than CMOS for all benchmarks from 2.5× to 800×. On average, the area of SWD circuits is 3.5× smaller and the power consumption is two orders of magnitude lower compared to the 10nm CMOS reference circuits

Spintronic Majority Gates

In this paper we present an overview of two types of majority gate devices based on spintronic phenomena. We compare the spin torque majority gate and the spin wave majority gate and describe work on these devices. We discuss operating conditions for the two device concepts, circuit implication and how these reflect on materials choices for device implementation

Advances, Challenges and Opportunities in 3D CMOS Sequential Integration

3D sequential integration enables the full use of the third dimension thanks to its high alignment performance. In this paper, we address the major challenges of 3D sequential integration: in particular, the control of molecular bonding allows us to obtain pristine quality top active layer. With the help of Solid Phase Epitaxy, we can match the performance of top FET, processed at low temperature (600°C), with the bottom FET devices. Finally, the development of a stable salicide enables to retain bottom performance after top FET processing. Overcoming these major technological issues offers a wide range of applications

Les neuf nouveaux herbicides du Columa

National audienc

Influence of soil moisture on long-term sorption of diuron and isoproturon by soil

International audienc

Les neuf nouveaux herbicides du Columa

National audienc