Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive natur

Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size

High precision pressure sensors based on SAW devices in the GHz range

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated

Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM

Due to its mechanical properties, diamond is very attractive as an active material for the fabrication of SAW resonators for high frequency applications. In this work, the synthesis of piezoelectric AlN films by reactive sputtering at room temperature has been optimized on thick diamond layers grown on Si and alumina substrates in order to process high frequency devices. The effect of diamond underlayer microstructure is evaluated by TEM. Two sets of samples are studied, AlN/NCD/Alumina and AlN/MCD/Si. The orientation of the AlN grains is shown to improve with the film thickness and the diamond grain size. For NCD underlayer, the AlN deposited on top is more oriented. Moreover, above 1 μm from the AlN/diamond interface, a high degree of the c-axis orientation (perpendicular to the AlN/diamond interface) is demonstrated even though two different grain lattice orientations are shown to coexist: one with the View the MathML source planes remaining parallel to the TEM-preparation lamella and the other with View the MathML source planes. The AlN/diamond interface is smooth down to the nm-scale

Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM

Due to its mechanical properties, diamond is very attractive as an active material for the fabrication of SAW resonators for high frequency applications. In this work, the synthesis of piezoelectric AlN films by reactive sputtering at room temperature has been optimized on thick diamond layers grown on Si and alumina substrates in order to process high frequency devices. The effect of diamond underlayer microstructure is evaluated by TEM. Two sets of samples are studied, AlN/NCD/Alumina and AlN/MCD/Si. The orientation of the AlN grains is shown to improve with the film thickness and the diamond grain size. For NCD underlayer, the AlN deposited on top is more oriented. Moreover, above 1 μm from the AlN/diamond interface, a high degree of the c-axis orientation (perpendicular to the AlN/diamond interface) is demonstrated even though two different grain lattice orientations are shown to coexist: one with the View the MathML source planes remaining parallel to the TEM-preparation lamella and the other with View the MathML source planes. The AlN/diamond interface is smooth down to the nm-scale

Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substrates

Scandium aluminum nitride (ScAlN) films have been synthesized by pulsed-DC reactive magnetron sputtering. The degree of c-axis orientation as well as piezoelectric characteristics of the Sc0.26Al0.74N thin films grown on Si (001) at various discharge powers and processing pressures values have been investigated. According to x-ray diffraction (XRD) measurements, the texture of the as-grown Sc0.26Al0.74N thin films becomes more prominent in the [0001]-direction at the highest target power (700W) and at the lowest processing pressure (4 mTorr). The piezoelectric response, as determined by measuring the d 33 piezoelectric constant, shows a maximum value of−12 pC/Nalso at 4 m Torr and 700 W, confirming a direct correlation between the d33 piezoelectric constant and the degree of orientation in the [0001]-direction. The atomic concentration of Sc and Al in the synthesized ScAlNthin film, determined by secondary ion mass spectroscopy (SIMS), reveals a Sc concentration lower than in the ScAl alloy target. The piezoresponse force microscopy (PFM) shows homogeneous polarity distribution with no inversion domains. The piezoelectric layers have been used to fabricate and measure surface acoustic wave (SAW) resonators on a Sc0.26Al0.74N/Si (001) bilayer system with resonance frequency of 1.4 GHz and coupling coefficient of 0.567. Such characteristic in the frequency response reveals the potential of these materials for advanced SAW devices in applications such as next generation (5G) wireless communication systems

If you're not confused, you're not paying attention: Ochrobactrum is not Brucella

Bacteria of the genus Brucella are facultative intracellular parasites that cause brucellosis, a severe animal and human disease. Recently, a group of taxonomists merged the brucellae with the primarily free-living, phylogenetically related Ochrobactrum spp. in the genus Brucella. This change, founded only on global genomic analysis and the fortuitous isolation of some opportunistic Ochrobactrum spp. from medically compromised patients, has been automatically included in culture collections and databases. We argue that clinical and environmental microbiologists should not accept this nomenclature, and we advise against its use because (i) it was presented without in-depth phylogenetic analyses and did not consider alternative taxonomic solutions; (ii) it was launched without the input of experts in brucellosis or Ochrobactrum; (iii) it applies a non-consensus genus concept that disregards taxonomically relevant differences in structure, physiology, population structure, core-pangenome assemblies, genome structure, genomic traits, clinical features, treatment, prevention, diagnosis, genus description rules, and, above all, pathogenicity; and (iv) placing these two bacterial groups in the same genus creates risks for veterinarians, medical doctors, clinical laboratories, health authorities, and legislators who deal with brucellosis, a disease that is particularly relevant in low- and middle-income countries. Based on all this information, we urge microbiologists, bacterial collections, genomic databases, journals, and public health boards to keep the Brucella and Ochrobactrum genera separate to avoid further bewilderment and harm

Multi-messenger Observations of a Binary Neutron Star Merger

International audienceOn 2017 August 17 a binary neutron star coalescence candidate (later designated GW170817) with merger time 12:41:04 UTC was observed through gravitational waves by the Advanced LIGO and Advanced Virgo detectors. The Fermi Gamma-ray Burst Monitor independently detected a gamma-ray burst (GRB 170817A) with a time delay of $\sim 1.7\,{\rm{s}}$ with respect to the merger time. From the gravitational-wave signal, the source was initially localized to a sky region of 31 deg(2) at a luminosity distance of ${40}_{-8}^{+8}$ Mpc and with component masses consistent with neutron stars. The component masses were later measured to be in the range 0.86 to 2.26 $\,{M}_{\odot }$. An extensive observing campaign was launched across the electromagnetic spectrum leading to the discovery of a bright optical transient (SSS17a, now with the IAU identification of AT 2017gfo) in NGC 4993 (at $\sim 40\,{\rm{Mpc}}$) less than 11 hours after the merger by the One-Meter, Two Hemisphere (1M2H) team using the 1 m Swope Telescope. The optical transient was independently detected by multiple teams within an hour. Subsequent observations targeted the object and its environment. Early ultraviolet observations revealed a blue transient that faded within 48 hours. Optical and infrared observations showed a redward evolution over ∼10 days. Following early non-detections, X-ray and radio emission were discovered at the transient’s position $\sim 9$ and $\sim 16$ days, respectively, after the merger. Both the X-ray and radio emission likely arise from a physical process that is distinct from the one that generates the UV/optical/near-infrared emission. No ultra-high-energy gamma-rays and no neutrino candidates consistent with the source were found in follow-up searches. These observations support the hypothesis that GW170817 was produced by the merger of two neutron stars in NGC 4993 followed by a short gamma-ray burst (GRB 170817A) and a kilonova/macronova powered by the radioactive decay of r-process nuclei synthesized in the ejecta