267 research outputs found
Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs
Electron-spin relaxation at different surfaces of p-doped GaAs is
investigated by means of spin, time and energy resolved 2-photon photoemission.
These results are contrasted with bulk results obtained by time-resolved
Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus
spin-flip mechanism. Due to the reduced hole density in the band bending region
at the (100) surface the spin-relaxation time increases over two orders of
magnitude towards lower energies. At the flat-band (011) surface a constant
spin relaxation time in agreement with our measurements and calculations for
bulk GaAs is obtained.Comment: 6 pages, 4 figure
A model for single electron decays from a strongly isolated quantum dot
Recent measurements of electron escape from a non-equilibrium charged quantum
dot are interpreted within a 2D separable model. The confining potential is
derived from 3D self-consistent Poisson-Thomas-Fermi calculations. It is found
that the sequence of decay lifetimes provides a sensitive test of the confining
potential and its dependence on electron occupation.Comment: 9 pages, 10 figure
Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)
The atomic and electronic structure of positively charged P vacancies on
InP(110) surfaces is determined by combining scanning tunneling microscopy,
photoelectron spectroscopy, and density-functional theory calculations. The
vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge
transfer level 0.75+-0.1 eV above the valence band maximum. The scanning
tunneling microscopy (STM) images show only a time average of two degenerate
geometries, due to a thermal flip motion between the mirror configurations.
This leads to an apparently symmetric STM image, although the ground state
atomic structure is nonsymmetric.Comment: 5 pages including 3 figures. related publications can be found at
http://www.fhi-berlin.mpg.de/th/paper.htm
Fermi-level alignment at metal-carbon nanotube interfaces: application to scanning tunneling spectroscopy
At any metal-carbon nanotube interface there is charge transfer and the
induced interfacial field determines the position of the carbon nanotube band
structure relative to the metal Fermi-level. In the case of a single-wall
carbon nanotube (SWNT) supported on a gold substrate, we show that the charge
transfers induce a local electrostatic potential perturbation which gives rise
to the observed Fermi-level shift in scanning tunneling spectroscopy (STS)
measurements. We also discuss the relevance of this study to recent experiments
on carbon nanotube transistors and argue that the Fermi-level alignment will be
different for carbon nanotube transistors with low resistance and high
resistance contacts.Comment: 4 pages, 3 ps figures, minor corrections, accepted by Phys. Rev. Let
Charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling
Motivated by the recent experimental evidence of commensurate surface charge
density waves (CDW) in Pb/Ge(111) and Sn/Ge(111) sqrt{3}-adlayer structures, as
well as by the insulating states found on K/Si(111):B and SiC(0001), we have
investigated the role of electron-electron interactions, and also of
electron-phonon coupling, on the narrow surface state band originating from the
outer dangling bond orbitals of the surface. We model the sqrt{3} dangling bond
lattice by an extended two-dimensional Hubbard model at half-filling on a
triangular lattice. We include an on-site Hubbard repulsion U and a
nearest-neighbor Coulomb interaction V, plus a long-ranged Coulomb tail. The
electron-phonon interaction is treated in the deformation potential
approximation. We have explored the phase diagram of this model including the
possibility of commensurate 3x3 phases, using mainly the Hartree-Fock
approximation. For U larger than the bandwidth we find a non-collinear
antiferromagnetic SDW insulator, possibly corresponding to the situation on the
SiC and K/Si surfaces. For U comparable or smaller, a rich phase diagram
arises, with several phases involving combinations of charge and
spin-density-waves (SDW), with or without a net magnetization. We find that
insulating, or partly metallic 3x3 CDW phases can be stabilized by two
different physical mechanisms. One is the inter-site repulsion V, that together
with electron-phonon coupling can lower the energy of a charge modulation. The
other is a novel magnetically-induced Fermi surface nesting, stabilizing a net
cell magnetization of 1/3, plus a collinear SDW, plus an associated weak CDW.
Comparison with available experimental evidence, and also with first-principle
calculations is made.Comment: 11 pages, 9 figure
Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions
A general formulation of boundary conditions for semiconductor-metal contacts
follows from a phenomenological procedure sketched here. The resulting boundary
conditions, which incorporate only physically well-defined parameters, are used
to study the classical unipolar drift-diffusion model for the Gunn effect. The
analysis of its stationary solutions reveals the presence of bistability and
hysteresis for a certain range of contact parameters. Several types of Gunn
effect are predicted to occur in the model, when no stable stationary solution
exists, depending on the value of the parameters of the injecting contact
appearing in the boundary condition. In this way, the critical role played by
contacts in the Gunn effect is clearly stablished.Comment: 10 pages, 6 Post-Script figure
Spin- and energy relaxation of hot electrons at GaAs surfaces
The mechanisms for spin relaxation in semiconductors are reviewed, and the
mechanism prevalent in p-doped semiconductors, namely spin relaxation due to
the electron-hole exchange interaction, is presented in some depth. It is shown
that the solution of Boltzmann-type kinetic equations allows one to obtain
quantitative results for spin relaxation in semiconductors that go beyond the
original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results
using surface sensitive two-photon photoemission techniques show that the spin
relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface
is several times longer than the corresponding bulk spin relaxation-times. A
theoretical explanation of these results in terms of the reduced density of
holes in the band-bending region at the surface is presented.Comment: 33 pages, 12 figures; earlier submission replaced by corrected and
expanded version; eps figures now included in the tex
Equilibrium shapes and energies of coherent strained InP islands
The equilibrium shapes and energies of coherent strained InP islands grown on
GaP have been investigated with a hybrid approach that has been previously
applied to InAs islands on GaAs. This combines calculations of the surface
energies by density functional theory and the bulk deformation energies by
continuum elasticity theory. The calculated equilibrium shapes for different
chemical environments exhibit the {101}, {111}, {\=1\=1\=1} facets and a (001)
top surface. They compare quite well with recent atomic-force microscopy data.
Thus in the InP/GaInP-system a considerable equilibration of the individual
islands with respect to their shapes can be achieved. We discuss the
implications of our results for the Ostwald ripening of the coherent InP
islands. In addition we compare strain fields in uncapped and capped islands.Comment: 10 pages including 6 figures. Submitted to Phys. Rev. B. Related
publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm
Simultaneous multi-frequency observation of the unknown redshift blazar PG 1553+113 in March-April 2008
The blazar PG 1553+113 is a well known TeV gamma-ray emitter. In this paper,
we determine its spectral energy distribution using simultaneous
multi-frequency data in order to study its emission processes. An extensive
campaign was carried out between March and April 2008, where optical, X-ray,
high-energy (HE) gamma-ray, and very-high-energy (VHE) gamma-ray data were
obtained with the KVA, Abastumani, REM, RossiXTE/ASM, AGILE and MAGIC
telescopes, respectively. This is the first simultaneous broad-band (i.e.,
HE+VHE) gamma-ray observation, though AGILE did not detect the source. We
combine data to derive source's spectral energy distribution and interpret its
double peaked shape within the framework of a synchrotron self compton modelComment: 5 pages, 2 figures, publishe
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