Thermoelectric cross-plane properties on p- and n-Ge/SixGe1-x superlattices

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/SixGe1-x superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si0.5Ge0.5 superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si0.3Ge0.7 superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor

Improving interinstitutional and intertechnology consistency of pulmonary SBRT by dose prescription to the mean internal target volume dose.

Dose, fractionation, normalization and the dose profile inside the target volume vary substantially in pulmonary stereotactic body radiotherapy (SBRT) between different institutions and SBRT technologies. Published planning studies have shown large variations of the mean dose in planning target volume (PTV) and gross tumor volume (GTV) or internal target volume (ITV) when dose prescription is performed to the PTV covering isodose. This planning study investigated whether dose prescription to the mean dose of the ITV improves consistency in pulmonary SBRT dose distributions. This was a multi-institutional planning study by the German Society of Radiation Oncology (DEGRO) working group Radiosurgery and Stereotactic Radiotherapy. CT images and structures of ITV, PTV and all relevant organs at risk (OAR) for two patients with early stage non-small cell lung cancer (NSCLC) were distributed to all participating institutions. Each institute created a treatment plan with the technique commonly used in the institute for lung SBRT. The specified dose fractionation was 3 × 21.5 Gy normalized to the mean ITV dose. Additional dose objectives for target volumes and OAR were provided. In all, 52 plans from 25 institutions were included in this analysis: 8 robotic radiosurgery (RRS), 34 intensity-modulated (MOD), and 10 3D-conformal (3D) radiation therapy plans. The distribution of the mean dose in the PTV did not differ significantly between the two patients (median 56.9 Gy vs 56.6 Gy). There was only a small difference between the techniques, with RRS having the lowest mean PTV dose with a median of 55.9 Gy followed by MOD plans with 56.7 Gy and 3D plans with 57.4 Gy having the highest. For the different organs at risk no significant difference between the techniques could be found. This planning study pointed out that multiparameter dose prescription including normalization on the mean ITV dose in combination with detailed objectives for the PTV and ITV achieve consistent dose distributions for peripheral lung tumors in combination with an ITV concept between different delivery techniques and across institutions

Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridges

ISSN:0909-0495ISSN:1600-577

Structural investigation of GaInP nanowires using X-ray diffraction

AbstractIn this work the structure of ternary GaxIn1−xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal–organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor