Liquid-Gas Surface Tension Voltage Dependence During Electrowetting on Dielectric of 5-90 nm Gold Nanofluids

This article investigates the effective liquid-gas surface tension changes of water and 5-90nm gold nanofluids measured during electrowetting on dielectric experiments. The Young-Laplace equation for sessile droplets in air was solved to fit the experimental droplet shape and determine the effective liquid-gas surface tension at each applied voltage. A good agreement between experimental droplet shapes and the predictions was observed for all the liquids investigated in applied range of 0-30V. The measured liquid-gas effective surface tensions of water and gold nanofluid decreased with voltage. At a given voltage, the effective liquid-gas surface tension of gold nanofluids initially decreased as the size of gold nanoparticles increased from 5 nm to 50 nm. Then, for 70nm and 90nm particle gold nanofluids, the effective liquid-gas surface tension started increasing too. The size of nanoparticles, and the applied voltage have a significant effect on variation of the effective liquid-gas surface tension with variations as much as 93% induced by voltage at a given particle size and 80% induced by particle size at a given voltage

Novel Measurement Methods for Thermoelectric Power Generator Materials and Devices

Thermoelectric measurements are notoriously challenging. In this work, we outline new thermoelectric characterization methods that are experimentally more straightforward and provide much higher accuracy, reducing error by at least a factor of 2. Specifically, three novel measurement methodologies for thermal conductivity are detailed: steady‐state isothermal measurements, scanning hot probe, and lock‐in transient Harman technique. These three new measurement methodologies are validated using experimental measurement results from standards, as well as candidate materials for thermoelectric power generation. We review thermal conductivity measurement results from new half‐Heusler (ZrNiSn‐based) materials, as well as commercial (Bi,Sb)2(Te,Se)3 and mature PbTe samples. For devices, we show characterization of commercial (Bi,Sb)2(Te,Se)3 modules, precommercial PbTe/TAGS modules, and new high accuracy numerical device simulation of Skutterudite devices. Measurements are validated by comparison to well‐established standard reference materials, as well as evaluation of device performance, and comparison to theoretical prediction obtained using measurements of individual properties. The new measurement methodologies presented here provide a new, compelling, simple, and more accurate means of material characterization, providing better agreement with theory

Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film

The structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin films are investigated for potential application in microthermoelectric devices. Nanocrystalline Si0.8Ge0.2 thin films are grown by low-pressure chemical vapor deposition on a sandwich of Si3N4/SiO2/Si3N4 films deposited on a Si (100) substrate. The Si0.8Ge0.2 film is doped with boron by ion implantation. The structure of the thin film is studied by means of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It is found that the film has column-shaped crystal grains ~100 nm in diameter oriented along the thickness of the film. The electrical conductivity and Seebeck coefficient are measured in the temperature range between 80–300 and 130–300 K, respectively. The thermal conductivity is measured at room temperature by a 3 method. As compared with bulk silicon-germanium and microcrystalline film alloys of nearly the same Si/Ge ratio and doping concentrations, the Si0.8Ge0.2 nanocrystalline film exhibits a twofold reduction in the thermal conductivitity, an enhancement in the Seebeck coefficient, and a reduction in the electrical conductivity. Enhanced heat carrier scattering due to the nanocrystalline structure of the films and a combined effect of boron segregation and carrier trapping at grain boundaries are believed to be responsible for the measured reductions in the thermal and electrical conductivities, respectively

Nanoscale Measurement of Thermal Conductivity of Organic and Inorganic Nanowires embedded in a matrix

Póster presentado en la 12th European Conference on Thermoelectricity (ECT2014), celebrada en Madrid del 24 al 26 de septiembre de 2014.In this abstract, we present thermal conductivity measurements of inorganic and organic nanowires. These measurements have been carried out with a Scanning Thermal Microscope (SThM) working in 3¿ mode. This technique has been proved to be a successful method to evaluate the thermal conductivity of single nanowires without the need of removing the matrix at which they are embedded. On the one hand, regarding inorganic nanowires, a thermal conductivity of 1.37±0.20W/m·K have been determined for nanowires made of Bi2Te3 with 350nm diameter [1]. On the other hand, measurements of the thermal conductivity of polymeric nanowires made of P3HT embedded in a matrix have been studied in dependence with the diameter of the nanowire. In this work, a reduction of the thermal conductivity of the nanowire is observed as its diameter becomes lower, which can be correlated with its different polymer crystalline orientations [2]. The thermal conductivity of the nanowires varies drastically from 2.29±0.15W/m·K to 0.5±0.24W/m·K when the diameter of the P3HT nanowire is reduced from 350nm to 120nm [2]. Moreover, a finite element model with COMSOL was also developed to validate the results of the thermal conductivity of the nanowires obtained from the analysis of the 3¿ signal of the thermal probe and the use of the effective medium theory. The 3¿-SThM technique is a powerful technique to determine the thermal properties of individual nanowires and study how this property changes in comparison to bulk structures or as a dependence of its diameter size, among others.Peer Reviewe

Electrical conductivity measurements of films

Póster presentado en la 12th European Conference on Thermoelectrics (ECT2014), celebrada en Madrid del 24 al 26 de septiembre de 2014.The characterization of the electrical conductivity of thin films is mandatory in all materials but particularly in thermoelectricity, its measurement is crucial in order to be able to determine the power factor and the figure of merit. A technique that could be used to carry out electrical measurements on thin films is the four probe technique. However, the spreading of the current due to the electrical field or the influence of the electrical contact resistances complicate the determination and analysis of the electrical conductivity of the film. In order to overcome these problems, we carried out a mesa attack on Bi2Te3 films grown by electrodeposition technique, which are hold on a Si substrate with a gold layer of 150nm. The goal is fabricating pillars whose later film resistivity analysis could approach to the 1D electrical model, which cannot be taken into account when dealing with a big film area. For that purpose, a lithography process was done on films with different thicknesses, which consist of a pattern of disks with different diameters ranging between 120µm and 60µm diameter. After the lithography, we evaporated 100nm of gold on top of the disks that would act as the top electrode. Then, we removed the photoresist and we performed a mesa attack with diluted nitric acid (1:2.5). As a result, we obtained pillars as the ones showed in Figure 1. On these pillars, I-V curves with the four probe technique were taken and the resistances of the pillars were determined. Representing the resistance of the pillars versus the inverse of the area of the pillar, the total resistivity of the films, which includes the contact resistances between the electrodes and the pillar, is obtained. Finally, to determine the electrical contact resistance and obtain the pure electrical resistivity of the film, these measurements were performed on different pillar thicknesses. The experimental results have been double-checked with COMSOL simulations of the four probe experiments carried out here, observing a good agreement between them.Peer Reviewe

Thermal properties of electrodeposited bismuth telluride nanowires embedded in amorphous alumina

3 pages, 3 figures.Bismuth telluride nanowires are of interest for thermoelectric applications because of the predicted enhancement in the thermoelectric figure-of-merit in nanowire structures. In this letter, we carried out temperature-dependent thermal diffusivity characterization of a 40 nm diameter Bi2Te3 nanowires/alumina nanocomposite. Measured thermal diffusivity of the composite decreases from 9.2×10–7 m2 s–1 at 150 K to 6.9×10–7 m2 s–1 at 300 K and is lower than thermal diffusivity of unfilled alumina templates. Effective medium calculations indicate that the thermal conductivity along nanowires axis is at least an order of magnitude lower than thermal conductivity of the bulk bismuth telluride.G.C. would like to acknowledge financial support from JPL and DOE. M.S.M.G. acknowledges a fellowship awarded by the MCYT (Spain) in the Ramon y Cajal Program.Peer reviewe

Lorenz function of Bi2_{2}Te3_{3}/Sb2_{2}Te3_{3} superlattices

Combining first principles density functional theory and semi-classical Boltzmann transport, the anisotropic Lorenz function was studied for thermoelectric Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices and their bulk constituents. It was found that already for the bulk materials Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$, the Lorenz function is not a pellucid function on charge carrier concentration and temperature. For electron-doped Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices large oscillatory deviations for the Lorenz function from the metallic limit were found even at high charge carrier concentrations. The latter can be referred to quantum well effects, which occur at distinct superlattice periods

High thermal conductivity in electrostatically engineered amorphous polymers

High thermal conductivity is critical for many applications of polymers (for example, packaging of light-emitting diodes), in which heat must be dissipated efficiently to maintain the functionality and reliability of a system. Whereas uniaxially extended chain morphology has been shown to significantly enhance thermal conductivity in individual polymer chains and fibers, bulk polymers with coiled and entangled chains have low thermal conductivities (0.1 to 0.4 W m(-1) K-1). We demonstrate that systematic ionization of a weak anionic polyelectrolyte, polyacrylic acid (PAA), resulting in extended and stiffened polymer chains with superior packing, can significantly enhance its thermal conductivity. Cross-plane thermal conductivity in spin-cast amorphous films steadily grows with PAA degree of ionization, reaching up to similar to 1.2 W m(-1) K-1, which is on par with that of glass and about six times higher than that of most amorphous polymers, suggesting a new unexplored molecular engineering strategy to achieve high thermal conductivities in amorphous bulk polymers