Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from $6.5\cdot 10^{14}$ to $10^{16}\,\mathrm{neq/cm^2}$.Comment: 15 pages, 11 Figure

Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from 6.5 · 10$^{14}$ to 1 · 10$^{16}$ n$_{eq}$/cm$^2$

Characterization of Passive CMOS Strip Sensors

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.Comment: 6 pages, 16 figure

Effects of trapped charge on the signal formation and detection efficiency for subsequent pulses in irradiated silicon sensors

Envisaged high energy physics experiments like the Future Circular Collider require unprecedented radiation hardness of the detectors, as well as short readout time due to high luminosity and occupancy. Silicon has proven to be extremely radiation hard, clear and fast signals can be recorded even at fluences close to $1\times 10^{16}~n_{eq}/\mathrm{cm}^{2}$. The signal formation in silicon strip sensors, irradiated and annealed until the phenomenon of charge multiplication occurred, was studied. ATLAS12EC R0 mini sensors were tested by means of Edge TCT measurements at temperatures around $-20^\circ C$. It was observed that the flow of generated charge changes the signal pulse in time, especially in charge multiplication regime. Moreover, it was observed that the detection of subsequent signals separated even several microseconds is altered by the charge trapped during the first pulses.The effects of trapped charge on the electrical configuration of a sensor is well known as a pumping effect in larger band-gap materials like diamond, but is often neglected for silicon at this relatively high temperature.The investigation of the effect created by trapped charges in silicon sensors using subsequent pulses allows to gain information on important parameters such as de-trapping times. Furthermore, it shows a severe impact on the sensor performance in a pile-up scenario. The irradiation fluence and hence the effective doping concentration, the temperature and the amount of initially created charge have a large impact on this phenomenon.The presented measurements help to characterize this phenomenon and particular attention was paid at the application point of view

Evaluation of passive CMOS strip sensors

Silicon sensors will continue to be the central tracking elements for upcoming particle physics detectors. They will have to cover large areas and thus be a main cost driver. The silicon sensors currently used are available only from very few manufacturers, thus detector technologies and designs that can be realized through established commercial industrial production processes and are cost-effective are becoming increasingly relevant. The CMOS technology is one of the important candidates. Since typically CMOS foundries are equipped for producing much smaller sizes than the currently used wafer-scale strip sensors, several neighbouring reticles have to be connected via a stitching process to obtain large sensors. In this study, strip sensors were designed and developed with the passive p-CMOS 150 nm process including stitching of up to five reticles. After initial electrical characterizations the sensors were tested in the laboratory with a 90Sr source and infrared lasers. The key investigation was to evaluate the impact of stitching on the sensor performance. The results presented will demonstrate that the stitching does not show any negative effect on the sensor performance before and after irradiation, and the stitching process is successful

Characterisation and simulation of stitched CMOS strip sensors

In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed

A Bayesian reanalysis of the Standard versus Accelerated Initiation of Renal-Replacement Therapy in Acute Kidney Injury (STARRT-AKI) trial

Background Timing of initiation of kidney-replacement therapy (KRT) in critically ill patients remains controversial. The Standard versus Accelerated Initiation of Renal-Replacement Therapy in Acute Kidney Injury (STARRT-AKI) trial compared two strategies of KRT initiation (accelerated versus standard) in critically ill patients with acute kidney injury and found neutral results for 90-day all-cause mortality. Probabilistic exploration of the trial endpoints may enable greater understanding of the trial findings. We aimed to perform a reanalysis using a Bayesian framework. Methods We performed a secondary analysis of all 2927 patients randomized in multi-national STARRT-AKI trial, performed at 168 centers in 15 countries. The primary endpoint, 90-day all-cause mortality, was evaluated using hierarchical Bayesian logistic regression. A spectrum of priors includes optimistic, neutral, and pessimistic priors, along with priors informed from earlier clinical trials. Secondary endpoints (KRT-free days and hospital-free days) were assessed using zero–one inflated beta regression. Results The posterior probability of benefit comparing an accelerated versus a standard KRT initiation strategy for the primary endpoint suggested no important difference, regardless of the prior used (absolute difference of 0.13% [95% credible interval [CrI] − 3.30%; 3.40%], − 0.39% [95% CrI − 3.46%; 3.00%], and 0.64% [95% CrI − 2.53%; 3.88%] for neutral, optimistic, and pessimistic priors, respectively). There was a very low probability that the effect size was equal or larger than a consensus-defined minimal clinically important difference. Patients allocated to the accelerated strategy had a lower number of KRT-free days (median absolute difference of − 3.55 days [95% CrI − 6.38; − 0.48]), with a probability that the accelerated strategy was associated with more KRT-free days of 0.008. Hospital-free days were similar between strategies, with the accelerated strategy having a median absolute difference of 0.48 more hospital-free days (95% CrI − 1.87; 2.72) compared with the standard strategy and the probability that the accelerated strategy had more hospital-free days was 0.66. Conclusions In a Bayesian reanalysis of the STARRT-AKI trial, we found very low probability that an accelerated strategy has clinically important benefits compared with the standard strategy. Patients receiving the accelerated strategy probably have fewer days alive and KRT-free. These findings do not support the adoption of an accelerated strategy of KRT initiation

Regional Practice Variation and Outcomes in the Standard Versus Accelerated Initiation of Renal Replacement Therapy in Acute Kidney Injury (STARRT-AKI) Trial: A Post Hoc Secondary Analysis.

ObjectivesAmong patients with severe acute kidney injury (AKI) admitted to the ICU in high-income countries, regional practice variations for fluid balance (FB) management, timing, and choice of renal replacement therapy (RRT) modality may be significant.DesignSecondary post hoc analysis of the STandard vs. Accelerated initiation of Renal Replacement Therapy in Acute Kidney Injury (STARRT-AKI) trial (ClinicalTrials.gov number NCT02568722).SettingOne hundred-fifty-three ICUs in 13 countries.PatientsAltogether 2693 critically ill patients with AKI, of whom 994 were North American, 1143 European, and 556 from Australia and New Zealand (ANZ).InterventionsNone.Measurements and main resultsTotal mean FB to a maximum of 14 days was +7199 mL in North America, +5641 mL in Europe, and +2211 mL in ANZ (p p p p p p p p = 0.007).ConclusionsAmong STARRT-AKI trial centers, significant regional practice variation exists regarding FB, timing of initiation of RRT, and initial use of continuous RRT. After adjustment, such practice variation was associated with lower ICU and hospital stay and 90-day mortality among ANZ patients compared with other regions