Fundamentals of metal-semiconductor contacts

The fundamentals of metal-semiconductor contacts are discussed. Contact resistance values for solar cells are also discussed

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p&gt

Coherent transport in Nb/delta-doped-GaAs hybrid microstructures

Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer to protect the active semiconductor layers during ex situ transfer. The superconductor is then sputter deposited in situ after thermal desorption of the protective layer. Two types of structures in particular will be discussed, i.e., a reference junction and the engineered one that contains an additional insulating AlGaAs barrier inserted during the growth in the semiconductor. This latter configuration may give rise to controlled interference effects and realizes the model introduced by de Gennes and Saint-James in 1963. While both structures show reflectionless tunneling-dominated transport, only the engineered junction shows additionally a low-temperature single marked resonance peaks superimposed to the characteristic Andreev-dominated subgap conductance. The analysis of coherent magnetotransport in both microstructures is successfully performed within the random matrix theory of Andreev transport and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations. The impact of junction morphology on reflectionless tunneling and the application of the employed fabrication technique to the realization of complex semiconductor-superconductor systems are furthermore discussed.Comment: 9 pages, 8 figures, invited review paper, to be published in Mod. Phys. Lett.

Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices

Voltage modulated electroluminescence spectra and low frequency ({\leq} 100 kHz) impedance characteristics of electroluminescent diodes are studied. Voltage modulated light emission tracks the onset of observed negative capacitance at a forward bias level for each modulation frequency. Active participation of sub-bandgap defect states in minority carrier recombination dynamics is sought to explain the results. Negative capacitance is understood as a necessary dielectric response to compensate any irreversible transient changes in the minority carrier reservoir due to radiative recombinations mediated by slowly responding sub-bandgap defects. Experimentally measured variations of the in-phase component of modulated electroluminescence spectra with forward bias levels and modulation frequencies support the dynamic influence of these states in the radiative recombination process. Predominant negative sign of the in-phase component of voltage modulated electroluminescence signal further confirms the bi-molecular nature of light emission. We also discuss how these states can actually affect the net density of minority carriers available for radiative recombination. Results indicate that these sub-bandgap states can suppress external quantum efficiency of such devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800 K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.Comment: 5 pages, 4 figure

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices

Generalized four-point characterization method for resistive and capacitive contacts

In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.Comment: 21 pages, 10 figure