100 research outputs found
Spatially resolved dielectric loss at the Si/SiO interface
Full text linkThe Si/SiO interface is populated by isolated trap states which modify
its electronic properties. These traps are of critical interest for the
development of semiconductor-based quantum sensors and computers, as well as
nanoelectronic devices. Here, we study the electric susceptibility of the
Si/SiO interface with nm spatial resolution using frequency-modulated
atomic force microscopy to measure a patterned dopant delta-layer buried 2 nm
beneath the silicon native oxide interface. We show that surface charge
organization timescales, which range from 1-150 ns, increase significantly
around interfacial states. We conclude that dielectric loss under time-varying
gate biases at MHz and sub-MHz frequencies in metal-insulator-semiconductor
capacitor device architectures is highly spatially heterogeneous over nm length
scales
Microwave Properties of 2D CMOS Compatible Co-Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon
Get PDFLow-dimensional microwave interconnects have important applications for nanoscale electronics, from complementary metal–oxide-semiconductor (CMOS) to silicon quantum technologies. Graphene is naturally nanoscale and has already demonstrated attractive electronic properties, however its application to electronics is limited by available fabrication techniques and CMOS incompatibility. Here, the characteristics of transmission lines made from silicon doped with phosphorus are investigated using phosphine monolayer doping. S-parameter measurements are performed between 4–26 GHz from room temperature down to 4.5 K. At 20 GHz, the measured monolayer transmission line characteristics consist of an attenuation constant of 40 dB mm−1 and a characteristic impedance of 600 Ω. The results indicate that Si:P monolayers are a viable candidate for microwave transmission and that they have a.c. properties similar to graphene, with the additional benefit of extremely precise, reliable, stable, and inherently CMOS compatible fabrication
Ocean acidification has different effects on the production of dimethylsulfide and dimethylsulfoniopropionate measured in cultures of Emiliania huxleyi and a mesocosm study:a comparison of laboratory monocultures and community interactions
Get PDFThe human-induced rise in atmospheric carbon dioxide since the industrial revolution has led to increasing oceanic carbon uptake and changes in seawater carbonate chemistry, resulting in lowering of surface water pH. In this study we investigated the effect of increasing CO2 partial pressure (pCO2) on concentrations of volatile biogenic dimethylsulfide (DMS) and its precursor dimethylsulfoniopropionate (DMSP), through monoculture studies and community pCO2 perturbation. DMS is a climatically important gas produced by many marine algae: it transfers sulfur into the atmosphere and is a major influence on biogeochemical climate regulation through breakdown to sulfate and formation of subsequent cloud condensation nuclei (CCN). Overall, production of DMS and DMSP by the coccolithophore Emiliania huxleyi strain RCC1229 was unaffected by growth at 900 μatm pCO2, but DMSP production normalised to cell volume was 12 % lower at the higher pCO2 treatment. These cultures were compared with community DMS and DMSP production during an elevated pCO2 mesocosm experiment with the aim of studying E. huxleyi in the natural environment. Results contrasted with the culture experiments and showed reductions in community DMS and DMSP concentrations of up to 60 and 32 % respectively at pCO2 up to 3000 μatm, with changes attributed to poorer growth of DMSP-producing nanophytoplankton species, including E. huxleyi, and potentially increased microbial consumption of DMS and dissolved DMSP at higher pCO2. DMS and DMSP production differences between culture and community likely arise from pH affecting the inter-species responses between microbial producers and consumers
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