Critical Issues for Cu(InGa)Se2 Solar Cells on Flexible Polymer Web

Elemental in-line evaporation on glass substrates has been a viable process for the large-area manufacture of CuInSe2-based photovoltaics, with module efficiencies as high as 12.7% [1]. However, lightweight, flexible CuInSe2-based modules are attractive in a number of applications, such as space power sources. In addition, flexible substrates have an inherent advantage in manufacturability in that they can be deposited in a roll-to-roll configuration allowing continuous, high yield, and ultimately lower cost production. As a result, high-temperature polymers have been used as substrates in depositing CuInSe2 films [2]. Recently, efficiency of 14.1% has been reported for a Cu(InGa)Se2-based solar cell on a polyimide substrate [3]. Both metal foil and polymer webs have been used as substrates for Cu(InGa)Se2-based photovoltaics in a roll-to-roll configuration with reasonable success [4,5]. Both of these substrates do not allow, readily, the incorporation of Na into the Cu(InGa)Se2 film which is necessary for high efficiency devices [3]. In addition, polymer substrates, can not be used at temperatures that are optimum for Cu(InGa)Se2 deposition. However, unlike metal foils, they are electrically insulating, simplifying monolithically-integrated module fabrication and are not a source of impurities diffusing into the growing film. The Institute of Energy Conversion (IEC) has modified its in-line evaporation system [6] from deposition onto glass substrates to roll-to-roll deposition onto polyimide (PI) film in order to investigate key issues in the deposition of large-area Cu(InGa)Se2 films on flexible polymer substrates. This transition presented unexpected challenges that had to be resolved. In this paper, two major problems, spitting from the Cu source and the cracking of Mo back contact film, will be discussed and the solution to each will be presented

CuIn1-xAlxSe2 Thin Films and Solar Cells

CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission \u3e85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. Devices with efficiencies greater than 10% are fabricated on CuIn[sub 1-x]Al[sub x]Se[sub 2] material over a wide range of Al composition. The best device demonstrated 11% efficiency, and the open circuit voltage increases to 0.73 V

High-Efficiency Solar Cells Based on Cu(InAl)Se[sub 2] Thin Films

A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through trap states in the space charge region in the Cu(InAl)Se2 or Cu(InGa)Se2 layer

Application of life-cycle energy analysis to photovoltaic module design

This paper highlights results from a collaborative life-cycle design project between the University of Michigan, the US Environment Protection Agency and United Solar Systems Corporation. Energy analysis is a critical planning and design tool for photovoltaic (PV) modules. A set of model equations for evaluating the life-cycle energy performance of PV systems and other electricity-generating systems are presented. The total PV life-cycle, encompassing material production, manufacturing and assembly, use and end-of-life management, was investigated. Three metrics—energy payback time, electricity production efficiency and life-cycle conversion efficiency—were defined for PV modules with and without balance-of-system (BOS) components. These metrics were evaluated for a United Solar UPM-880 amorphous silicon PV module based on average insolation in Detroit, Boulder and Phoenix. Based on these metrics, a minimum condition for assessing the sustainability of electricity-generating systems was proposed and discussed. The life-cycle energy analysis indicated that the aluminum frame is responsible for a significant fraction of the energy invested in the UPM-880 module. © 1997 John Wiley & Sons, Ltd.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/35191/1/169_ftp.pd

Ab-initio vibrational properties of transition metal chalcopyrite alloys determined as high-efficiency intermediate-band photovoltaic materials

In this work, we present frozen phonon and linear response ab-initio research into the vibrational properties of the CuGaS2 chalcopyrite and transition metal substituted (CuGaS2)M alloys. These systems are potential candidates for developing a novel solar-cell material with enhanced optoelectronic properties based in the implementation of the intermediate-band concept. We have previously carried out ab-initio calculations of the electronic properties of these kinds of chalcopyrite metal alloys showing a narrow transition metal band isolated in the semiconductor band gap. The substitutes used in the present work are the 3d metal elements, Titanium and Chromium. For the theoretical calculations we use standard density functional theory at local density and generalized gradient approximation levels. We found that the optical phonon branches of the transition metal chalcopyrite, are very sensitive to the specific bonding geometry and small changes in the transition metal environment

Electronic and magnetic properties of the Fe-doped CuInS2

The Fe-doped CuInS2 could have important applications for photovoltaic or spintronic applications. This material has been analyzed from first principles with the local density and the generalized gradient approximation, as well as with a Hubbard term. The effect on the electronic and magnetic structure has been carried out for both ferromagnetic and antiferromagnetic spin alignments. The results compare well with the experimental ones

Polycrystalline thin film materials and devices

Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed