Pair-distribution functions of the two-dimensional electron gas

Based on its known exact properties and a new set of extensive fixed-node reptation quantum Monte Carlo simulations (both with and without backflow correlations, which in this case turn out to yield negligible improvements), we propose a new analytical representation of (i) the spin-summed pair-distribution function and (ii) the spin-resolved potential energy of the ideal two-dimensional interacting electron gas for a wide range of electron densities and spin polarization, plus (iii) the spin-resolved pair-distribution function of the unpolarized gas. These formulae provide an accurate reference for quantities previously not available in analytic form, and may be relevant to semiconductor heterostructures, metal-insulator transitions and quantum dots both directly, in terms of phase diagram and spin susceptibility, and indirectly, as key ingredients for the construction of new two-dimensional spin density functionals, beyond the local approximation.Comment: 12 pages, 10 figures; misprints correcte

Monte Carlo approach of the islanding of polycrystalline thin films

We computed by a Monte Carlo method derived from the Solid on Solid model, the evolution of a polycrystalline thin film deposited on a substrate during thermal treatment. Two types of substrates have been studied: a single crystalline substrate with no defects and a single crystalline substrate with defects. We obtain islands which are either flat (i.e. with a height which does not overcome a given value) or grow in height like narrow towers. A good agreement was found regarding the morphology of numerical nanoislands at equilibrium, deduced from our model, and experimental nanoislands resulting from the fragmentation of YSZ thin films after thermal treatment.Comment: 20 pages, 7 figure

Electron-Phonon Coupling in Charged Buckminsterfullerene

A simple, yet accurate solution of the electron-phonon coupling problem in C_{60} is presented. The basic idea behind it is to be found in the parametrization of the ground state electronic density of the system calculated making use of ab-initio methods, in term of sp$^{2+x}$ hybridized orbitals. This parametrization allows for an economic determination of the deformation potential associated with the fullerene's normal modes. The resulting electron-phonon coupling constants are used to calculate Jahn-Teller effects in C_{60}^-, and multiple satellite peaks in the corresponding photoemission reaction. Theory provides an accurate account of the experimental findings.Comment: 11 pages, 3 figures. Accepted for publication in Chem. Phys. Let

Acceleration Schemes for Ab-Initio Molecular Dynamics and Electronic Structure Calculations

We study the convergence and the stability of fictitious dynamical methods for electrons. First, we show that a particular damped second-order dynamics has a much faster rate of convergence to the ground-state than first-order steepest descent algorithms while retaining their numerical cost per time step. Our damped dynamics has efficiency comparable to that of conjugate gradient methods in typical electronic minimization problems. Then, we analyse the factors that limit the size of the integration time step in approaches based on plane-wave expansions. The maximum allowed time step is dictated by the highest frequency components of the fictitious electronic dynamics. These can result either from the large wavevector components of the kinetic energy or from the small wavevector components of the Coulomb potential giving rise to the so called {\it charge sloshing} problem. We show how to eliminate large wavevector instabilities by adopting a preconditioning scheme that is implemented here for the first-time in the context of Car-Parrinello ab-initio molecular dynamics simulations of the ionic motion. We also show how to solve the charge-sloshing problem when this is present. We substantiate our theoretical analysis with numerical tests on a number of different silicon and carbon systems having both insulating and metallic character.Comment: RevTex, 9 figures available upon request, to appear in Phys. Rev.

Ab-initio Molecular Dynamics study of electronic and optical properties of silicon quantum wires: Orientational Effects

We analyze the influence of spatial orientation on the optical response of hydrogenated silicon quantum wires. The results are relevant for the interpretation of the optical properties of light emitting porous silicon. We study (111)-oriented wires and compare the present results with those previously obtained within the same theoretical framework for (001)-oriented wires [F. Buda {\it et al.}, {\it Phys. Rev. Lett.} {\bf 69}, 1272, (1992)]. In analogy with the (001)-oriented wires and at variance with crystalline bulk silicon, we find that the (111)-oriented wires exhibit a direct gap at ${\bf k}=0$ whose value is largely enhanced with respect to that found in bulk silicon because of quantum confinement effects. The imaginary part of the dielectric function, for the external field polarized in the direction of the axis of the wires, shows features that, while being qualitatively similar to those observed for the (001) wires, are not present in the bulk. The main conclusion which emerges from the present study is that, if wires a few nanometers large are present in the porous material, they are optically active independently of their specific orientation.Comment: 14 pages (plus 6 figures), Revte

First-principle study of excitonic self-trapping in diamond

We present a first-principles study of excitonic self-trapping in diamond. Our calculation provides evidence for self-trapping of the 1s core exciton and gives a coherent interpretation of recent experimental X-ray absorption and emission data. Self-trapping does not occur in the case of a single valence exciton. We predict, however, that self-trapping should occur in the case of a valence biexciton. This process is accompanied by a large local relaxation of the lattice which could be observed experimentally.Comment: 12 pages, RevTex file, 3 Postscript figure

Gravitational Microlensing Events from the First Year of the Northern Galactic Plane Survey by the Zwicky Transient Facility

The Zwicky Transient Facility (ZTF) (Bellm et al. 2019; Graham et al. 2019; Masci et al. 2019) is currently surveying the entire northern sky, including dense Galactic plane fields. Here, we present preliminary results of the search for gravitational microlensing events in the ZTF data collected from the beginning of the survey (2018 March 20) through 2019 June 30

A fourfold coordinated point defect in silicon

Due to their technological importance, point defects in silicon are among the best studied physical systems. The experimental examination of point defects buried in bulk is difficult and evidence for the various defects usually indirect. Simulations of defects in silicon have been performed at various levels of sophistication ranging from fast force fields to accurate density functional calculations. The generally accepted viewpoint from all these studies is that vacancies and self interstitials are the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a new fourfold coordinated point defect in silicon that is lower in energy

Transport and cooling of singly-charged noble gas ion beams

The transport and cooling of noble gas singly-charged ion beams by means of a Radio Frequency Quadrupole Cooler Buncher (RFQCB) have been studied at the LIMBE low energy beam line of the GANIL facility. Ions as light as $^{4}He^+$ have been cooled and stored before their extraction in bunches using $H_2$ as buffer gas. Bunches characteristics have been studied as a function of the parameters of the device. Sizeable transmissions of up to 10 $$ have been obtained. A detailed study of the lifetime of ions inside the buncher has been performed giving an estimate of the charge exchange cross-section. Results of a microscopic Monte-Carlo transport code show reasonable agreement with experimental data.Comment: 13 figure