Search for a Metallic Dangling-Bond Wire on nn-doped H-passivated Semiconductor Surfaces

We have theoretically investigated the electronic properties of neutral and $n$-doped dangling bond (DB) quasi-one-dimensional structures (lines) in the Si(001):H and Ge(001):H substrates with the aim of identifying atomic-scale interconnects exhibiting metallic conduction for use in on-surface circuitry. Whether neutral or doped, DB lines are prone to suffer geometrical distortions or have magnetic ground-states that render them semiconducting. However, from our study we have identified one exception -- a dimer row fully stripped of hydrogen passivation. Such a DB-dimer line shows an electronic band structure which is remarkably insensitive to the doping level and, thus, it is possible to manipulate the position of the Fermi level, moving it away from the gap. Transport calculations demonstrate that the metallic conduction in the DB-dimer line can survive thermally induced disorder, but is more sensitive to imperfect patterning. In conclusion, the DB-dimer line shows remarkable stability to doping and could serve as a one-dimensional metallic conductor on $n$-doped samples.Comment: 8 pages, 5 figure

A tunable electronic beam splitter realized with crossed graphene nanoribbons

Graphene nanoribbons (GNRs) are promising components in future nanoelectronics due to the large mobility of graphene electrons and their tunable electronic band gap in combination with recent experimental developments of on-surface chemistry strategies for their growth. Here, we explore a prototype 4-terminal semiconducting device formed by two crossed armchair GNRs (AGNRs) using state-of-the-art first-principles transport methods. We analyze in detail the roles of intersection angle, stacking order, inter-GNR separation, GNR width, and finite voltages on the transport characteristics. Interestingly, when the AGNRs intersect at θ=60°, electrons injected from one terminal can be split into two outgoing waves with a tunable ratio around 50% and with almost negligible back-reflection. The split electron wave is found to propagate partly straight across the intersection region in one ribbon and partly in one direction of the other ribbon, i.e., in analogy with an optical beam splitter. Our simulations further identify realistic conditions for which this semiconducting device can act as a mechanically controllable electronic beam splitter with possible applications in carbon-based quantum electronic circuits and electron optics. We rationalize our findings with a simple model suggesting that electronic beam splitters can generally be realized with crossed GNRs

Symmetry forbidden morphologies and domain boundaries in nanoscale graphene islands

The synthesis of graphene nanoislands with tailored quantum properties requires an atomic control of the morphology and crystal structure. As one reduces their size down to the nanometer scale, domain boundary and edge energetics, as well as nucleation and growth mechanisms impose different stability and kinetic landscape from that at the microscale. This offers the possibility to synthesize structures that are exclusive to the nanoscale, but also calls for fundamental growth studies in order to control them. By employing high-resolution scanning tunneling microscopy we elucidate the atomic stacking configurations, domain boundaries, and edge structure of graphene nanoislands grown on Ni(1 1 1) by CVD and post-annealed at different temperatures. We find a non-conventional multistep mechanism that separates the thermal regimes for growth, edge reconstruction, and final stacking configuration, leading to nanoisland morphologies that are incompatible with their stacking symmetry. Whole islands shift their stacking configuration during cooling down, and others present continuous transitions at the edges. A statistical analysis of the domain structures obtained at different annealing temperatures reveals how polycrystalline, ill-defined structures heal into shape-selected islands of a single predominant stacking. The high crystallinity and the control on morphology and edge structure makes these graphene nanoislands ideal for their application in optoelectronics and spintronics

Molecular bridge engineering for tuning quantum electronic transport and anisotropy in nanoporous graphene

Recent advances on surface-assisted synthesis have demonstrated that arrays of nanometer wide graphene nanoribbons can be laterally coupled with atomic precision to give rise to a highly anisotropic nanoporous graphene structure. Electronically, this graphene nanoarchitecture can be conceived as a set of weakly coupled semiconducting 1D nanochannels with electron propagation characterized by substantial interchannel quantum interferences. Here, we report the synthesis of a new nanoporous graphene structure where the interribbon electronic coupling can be controlled by the different degrees of freedom provided by phenylene bridges that couple the conducting channels. This versatility arises from the multiplicity of phenylene cross-coupling configurations, which provides a robust chemical knob, and from the interphenyl twist angle that acts as a fine-tunable knob. The twist angle is significantly altered by the interaction with the substrate, as confirmed by a combined bond-resolved scanning tunneling microscopy (STM) and ab initio analysis, and should accordingly be addressable by other external stimuli. Electron propagation simulations demonstrate the capability of either switching on/off or modulating the interribbon coupling by the corresponding use of the chemical or the conformational knob. Molecular bridges therefore emerge as efficient tools to engineer quantum transport and anisotropy in carbon-based 2D nanoarchitectures.This research was funded by the CERCA Programme/ Generalitat de Catalunya and by Grant Nos. SEV-2017-0706, CEX2021-001214-S, PID2019-107338RB-C62, PID2019- 107338RB-C65, and PID2019-107338RB-C66 funded by MCIN/AEI/10.13039/501100011033; FLAG-ERA Grant LEGOCHIP Projects PCI2019-111890-2 and PCI2019-111933-2 funded by MCIN/AEI/10.13039/501100011033 and cofunded by the European Union; Grant Nos. TED2021- 132388B-C41, TED2021-132388B-C42, and TED2021- 132388B-C44 funded by MCIN/AEI/10.13039/ 501100011033 and the European Union NextGenerationEU/ PRTR; Xunta de Galicia (Centro de Investigación de Galicia accreditation 2019−2022, ED431G 2019/03). X.D.C., A.S., and A.G.-L. also acknowledge the financial support received from the IKUR Strategy under the collaboration agreement between Ikerbasque Foundation and DIPC on behalf of the Department of Education of the Basque Government. C.M. was supported by Grant RYC2019-028110-I funded by MICIN/AEI/10.13039/501100011033 and by the European Social Fund “ESF Investing in your future”. M.T. was supported by Grant No. BES-2017-08078 funded by MCIN/ AEI/10.13039/501100011033 and by “ESF Investing in your future”. M.B. acknowledges funding from Villum fonden (VIL 00013340)

Stabilizing edge fluorination in graphene nanoribbons

The on-surface synthesis of edge-functionalized graphene nanoribbons (GNRs) is challenged by the stability of the functional groups throughout the thermal reaction steps of the synthetic pathway. Edge fluorination is a particularly critical case in which the interaction with the catalytic substrate and intermediate products can induce the complete cleavage of the otherwise strong C-F bonds before the formation of the GNR. Here, we demonstrate how a rational design of the precursor can stabilize the functional group, enabling the synthesis of edge-fluorinated GNRs. The survival of the functionalization is demonstrated by tracking the structural and chemical transformations occurring at each reaction step with complementary X-ray photoelectron spectroscopy and scanning tunneling microscopy measurements. In contrast to previous attempts, we find that the C-F bond survives the cyclodehydrogenation of the intermediate polymers, leaving a thermal window where GNRs withhold more than 80% of the fluorine atoms. We attribute this enhanced stability of the C-F bond to the particular structure of our precursor, which prevents the cleavage of the C-F bond by avoiding interaction with the residual hydrogen originated in the cyclodehydrogenation. This structural protection of the linking bond could be implemented in the synthesis of other sp2-functionalized GNRs

Unraveling the electronic structure of narrow atomically precise chiral graphene nanoribbons

This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposesRecent advances in graphene-nanoribbon-based research have demonstrated the controlled synthesis of chiral graphene nanoribbons (chGNRs) with atomic precision using strategies of on-surface chemistry. However, their electronic characterization, including typical figures of merit like band gap or frontier band's effective mass, has not yet been reported. We provide a detailed characterization of (3,1)-chGNRs on Au(111). The structure and epitaxy, as well as the electronic band structure of the ribbons, are analyzed by means of scanning tunneling microscopy and spectroscopy, angle-resolved photoemission, and density functional theoryThe project leading to this publication has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement no. 635919), from the Spanish Ministry of Economy, Industry and Competitiveness (MINECO, grant nos. MAT2016-78293-C6, FIS2015-62538-ERC), from the Basque Government (grant nos. IT-621-13, PI-2015-1-42, PI-2016-1-0027), from the European Commission in FP7 FET-ICT “Planar Atomic and Molecular Scale Devices” (PAMS) project (contract no. 610446), from the Xunta de Galicia (Centro singular de investigación de Galicia accreditation 2016−2019, ED431G/09), and from the European Regional Development Fund (ERDF

Band Depopulation of Graphene Nanoribbons Induced by Chemical Gating with Amino Groups

Altres ajuts: Xunta de Galicia (ED431G/09); Gobierno Vasco (IT1246-19, IT-1255-19); Diputación Foral de Gipuzkoa (RED 2019-096); CERCA Program/Generalitat de Catalunya; Program Interreg V-A España-Francia-Andorra (194/16 TNI)The electronic properties of graphene nanoribbons (GNRs) can be precisely tuned by chemical doping. Here we demonstrate that amino (NH) functional groups attached at the edges of chiral GNRs (chGNRs) can efficiently gate the chGNRs and lead to the valence band (VB) depopulation on a metallic surface. The NH-doped chGNRs are grown by on-surface synthesis on Au(111) using functionalized bianthracene precursors. Scanning tunneling spectroscopy resolves that the NH groups significantly upshift the bands of chGNRs, causing the Fermi level crossing of the VB onset of chGNRs. Through density functional theory simulations we confirm that the hole-doping behavior is due to an upward shift of the bands induced by the edge NH groups